First-principles calculations on Si(220) located 6H–SiC(10■0)surface with different stacking sites

6H–SiC(10ˉ10) surface and Si(220)/6H–SiC(10ˉ10) interface with different stacking sites are investigated using first-principles calculations. Surface energies of 6H–SiC(10ˉ10)(case I, case II, and case III) are firstly studied and the surface calculation results show that case II and case III are more stable than case I. Then, the adhesion energies, fracture toughness values, interfacial energies, densities of states, and electronic structures of Si(220)/6H–SiC(10ˉ10) interfaces for three stacking models(AM, BM, and CM) are calculated. The CM model has the highest adhesion energy and the lowest interfacial energy, suggesting that the CM is stronger and more thermodynamically stable than AM and BM. Densities of states and the total charge densities give evidence that interfacial bonding is formed at the interface and that Si–Si and Si–C are induced due to the hybridization of C-2p and Si-3p. Moreover, the Si–C is much stronger than Si–Si at the interface,implying that the contribution of the interfacial bonding mainly comes from Si–C rather than Si–Si.     

关于《纠正两个习惯性错误》的错误

<正>《中学生数学》杂志2007年7月（上）高中版P₄《纠正两个习惯性错误》一文对如下命题:"已知命题P:（x-3）/（x+5）≥0,求■P"指出表示命题     

试谈天津高考数学试卷

一、试卷特点 　　1.试卷结构略有变化 　　2005年天津卷与2004年相比有一点变化,选择题、填空题、解答题个数分别为10,6,6和12,4,6.由于选择题可以用排除法、特殊化、估值法、极端法等方法,在考查学生的逻辑推理能力、准确计算能力方面有一定的欠缺.所以这种调整有利于考查学生对数学知识的理解.不过与北京、上海相比,此步迈得较小.……     

一种新型Si/SiGe/Si双异质结PIN电学调制结构的异质结能带分析

PIN结构是电光调制器中常见的一种电学调制结构, 该结构中载流子注入效率直接影响着电光调制器的性能. 在前期的研究中, 我们在SOI材料的基础上提出了一种新型Si/SiGe/Si双异质结PIN电学调制结构, 可以有效提高载流子注入效率, 降低调制功耗. 为了进一步研究这种新型调制器结构的调制机理, 本文从单异质结能带理论出发, 定量分析了该新型结构中双异质结的势垒高度变化, 给出了双异质结势垒高度的定量公式, 将新型结构与SiGe-OI和SOI两种PIN电学调制结构进行能带对比, 分析了该新型结构载流子注入增强的原因, 最后模拟了新型结构的能带分布, 以及能带和调制电压与注入载流子密度的关系, 并与SiGe-OI和SOI两种PIN电学调制结构进行对比发现, 1 V调制电压下, 新型结构的载流子密度达到了8× 10¹⁸cm^-3, 比SOI 结构的载流子密度高了800%, 比SiGe-OI结构的载流子密度高了340%, 进一步说明了该新型结构的优越性, 并且验证了理论分析的正确性.     

试谈天津高考数学试卷

一、试卷特点 　　1.试卷结构略有变化 　　2005年天津卷与2004年相比有一点变化,选择题、填空题、解答题个数分别为10,6,6和12,4,6.由于选择题可以用排除法、特殊化、估值法、极端法等方法,在考查学生的逻辑推理能力、准确计算能力方面有一定的欠缺.所以这种调整有利于考查学生对数学知识的理解.不过与北京、上海相比,此步迈得较小.……     

Island-growth of SiCGe films on SiC

SiCGe ternary alloys have been grown on SiC by hot-wall low-pressure chemical vapour deposition. It has been found that the samples cxhibit an island configuration, and the island growth of SiCGe epilayer depends on the processing parameters such as the growth temperature. When the growth temperature is comparatively low, the epilayer has two types of islands： onc is spherical island; another is cascading triangular island. With the increase of the growth temperature, the islands change from spherical to cascading triangular mode. The size and density of the islands depend on the growth duration and GeH4 flow-rate. A longer growth time and a larger GeH4 flow-rate can increase the size and density of the island in thc initial stage of the epitaxy. In our case, The optimal growth for a high density of uniform islands occurred at a growth temperature of 1100℃ for l-minute growth, with 10 SCCM GeH4, resulting in a narrow size distribution （about 30nm diameter） and high density （about 3.5 ×10^10 dots/cm2）. The growth follows Stranski- Krastanov modc （2D to 3D modc）, both of the islands and the 2D growth layer have face-centred cubic structure, and the critical thickness of the 2D growth layer is only 2.5 nm.[第一段]