强激光大气传输中拉曼散射的数值计算

用经典理论推导了强激光大气传输中由于氮的转动受激Ｒａｎｍａｎ散射所造成的对传输功率的限制方程，并计算了光强的阈值，得到了阈光强与激光波长和脉宽的关系；此外，还研究了二维效应和激光脉冲系列通过大气时声子激发的累加效应。     

计及风和湍流的热晕及其相位补偿的数值研究

本工作用包括热晕、湍流和风等效应的等压近似下四维激光传输程序，数值计算了激光大气传输中的整束热畸变效应及其理想相位补偿，得到了各种情况下的激光大气传输畸变图象，并分析了热晕和湍流的相互作用。另外，还讨论了时、空步长的选取原则。     

流动注射在线离子交换预富集—氢化物发生原子荧光光谱法测定痕量…

研究了流动注射液在线离子交换预富集及在线氢化物发生法与原子荧光光谱法的联用技术，设计了双柱交替正向富集和反向洗脱的在线离了交换流路系统。在采样频率为３０次／ｈ下，灵敏度较常流动注射氢化物发生原子荧光光谱法提高了１１倍，应用于环境水样痕量碲的分析，获得了满意的结果。     

热晕瞬态效应的数值模拟

根据瞬态四维（４Ｄ）热晕程序，研究了激光大气传输中热晕瞬变效应及如何过渡到等压近似下的热晕状态，并与等压近似下４Ｄ热晕程序计算结果作了对比，在大约四倍流体力学时间，瞬态４Ｄ热晕程序计算结果逼近等压近似下的结果；另外，还作了相位补偿计算，对光强每平方厘米几千瓦的情况，在理想的自适应光学系统动力学条件下，瞬变阶段的热畸变能相当有效地实时补偿。     

正、余弦定理在三棱柱中的拓展

正、余弦定理是中学数学中应用最广泛的公式之一，若将它拓展到空间三棱柱，则可得到类似的正、余弦定理．     

High throughput N-modular redundancy for error correction design of memristive stateful logic

Memristive stateful logic is one of the most promising candidates to implement an in-memory computing system that computes within the storage unit. It can eliminate the costs for the data movement in the traditional von Neumann system. However, the instability in the memristors is inevitable due to the limitation of the current fabrication technology, which incurs a great challenge for the reliability of the memristive stateful logic. In this paper, the implication of device instability on the reliability of the logic event is simulated. The mathematical relationship between logic reliability and redundancy has been deduced. By combining the mathematical relationship with the vector-matrix multiplication in a memristive crossbar array, the logic error correction scheme with high throughput has been proposed. Moreover, a universal design paradigm has been put forward for complex logic. And the circuit schematic and the flow of the scheme have been raised. Finally, a 1-bit full adder (FA) based on the NOR logic and NOT logic is simulated and the mathematical evaluation is performed. It demonstrates the scheme can improve the reliability of the logic significantly. And compared with other four error corrections, the scheme which can be suitable for all kinds of R-R logics and V-R logics has the best universality and throughput. Compared with the other two approaches which also need additional complementary metal-oxide semiconductor (CMOS) circuits, it needs fewer transistors and cycles for the error correction.     

微波水热两步法合成高可见光响应Ag2S/ZnO及其光催化性能、机理

在不同的制备条件下,通过微波水热两步法获得了一系列Ag₂S/ZnO光催化剂,采用X射线粉末衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见漫反射吸收光谱(UV-Vis/DRS)、扫描电子显微镜(SEM)和N₂吸附-脱附等测试手段对产物结构和形貌进行了表征。结果表明,产物以六方纤锌矿ZnO为主,其晶型结构并未随着反应温度和Ag₂S物质的量的增加而改变。Ag₂S的引入显著增强了光催化剂在可见光区的吸收,使吸收边带发生红移,同时抑制了ZnO(001)晶面的生长。另外,所得产物的形貌随着Ag₂S物质的量的增加从爆米花状转变为少量的柱体颗粒,且BET比表面积经过复合后明显减小。以罗丹明B为目标降解物,研究并比较了一系列Ag₂S/ZnO光催化剂对罗丹明B的光降解性能。结果表明,n_Ag2S/n_ZnO=1:10时,光催化剂在紫外光、可见光和模拟日光的照射下具有最好的光催化效果,优于目前应用最广泛的市售P25。另外,所制备的光催化材料Ag₂S/ZnO经4次循环使用后,其降解效率没有明显下降,表明该催化材料具有一定的光催化稳定性。经捕获实验研究发现,在Ag₂S/ZnO的光催化反应中空穴起主要作用,并根据绝对电负性估算了复合材料Ag₂S/ZnO的能带位置,据此提出了可能的光催化反应机理。