半导体望远镜探测系统研制及其在卫星上的应用

简要介绍了由不同厚度的Au-Si面垒和Si(Li)半导体探测器组成的全耗尽带电粒子望远镜系统的制备及其性能,给出了载有该望远镜系统的风云三号卫星（FY-3A）在轨道高度约为830 km辐射区域监测2.9—100 MeV质子和0.15—5.7 MeV电子的结果。In this paper, the performances as well as the production procedure of the charged particle telescope systems consisting of Si(Au) surface barrier detector and Si(Li) detector with different thicknesses were introduced briefly. As an example, the density distributions of the protons and electrons in space detected by the telescope systems mounted on the Fengyun 3 satellite (FY 3A) were also presented.     

介孔Al2O3分离富集-火焰原子吸收法测定麻黄和马钱子中的铅

研究了介孔Al2O3分离富集-火焰原子吸收法测定麻黄和马钱子中的铅的新方法.探讨了溶液pH、吸附温度、洗脱条件及共存离子对铅分离富集的影响.在最佳实验条件下,介孔Al2O3能定量、快速吸附试液中的痕量pb2+,其静态饱和吸附容量为8.53 mg/g.吸附在介孔Al2O3上的pb2可用0.2 mol/LEDTA完全洗脱....     

Phonon contribution to nonionizing energy loss in silicon detectors

Nonionizing energy loss (NIEL) has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects, neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons, has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles. NIEL is proportional to the equivalent irradiation fluence that the detector has received.     

Application of stratified implantation for silicon micro-strip detectors

In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P⁺ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.     

带有止步和状态相依的M/Ej/1/N排队系统的矩阵解法

研究了带有止步和服务率依赖于状态的M/Ej/1/N排队系统.顾客到达系统时,以一定的概率选择进人系统或止步(不进人系统).顾客接受服务的服务率依赖于系统中的顾客数,当系统中的顾客数不超过临界值k时,服务员慢速服务;否则,服务员快速服务.利用分块矩阵的方法,推出了稳态概率向量所满足的矩阵形式的迭代公式,给出了稳态概率的表达式和计算过程.作为特例,考虑了N=4时系统稳态概率的计算.在此基础上,还求出了系统的一些性能指标,并建立了以临界值k为控制变量的费用模型.通过数值分析,求出了使费用函数最小的最优临界值k*,并进一步研究了模型参数对最优临界值和最优费用的影响.     

偏振棱镜消光比参量精密测量方法

为解决偏振棱镜消光比参量传统检测方法中,由于光线的非垂直入射和消光位置定位误差等因素的影响,导致不能精确测量的问题,以格兰-泰勒棱镜为例,通过对偏振光进行磁光调制以精确确定待测棱镜消光位置,并在消光位置附近多次小角度转动待测棱镜,以减小光线的非垂直入射对出射光强产生的非线性微扰.仿真和实验验证表明,该方法可以准确地得到消光光强与平行光强,得出消光比参量,满足测量准确度要求.     

抗植入式高分子医用材料感染的研究进展

植入式高分子医用材料表面会粘附细菌形成生物膜引发生物材料相关的感染(BRI),给高分子医用材料的广泛应用提出了重大挑战.本文从BRI发生的机制入手,综述了通过高分子医用材料表面改性减少细菌粘附与使用抗菌素-生物材料体系两个方面来抵抗BRI发生的研究进展,重点阐述了局部抗菌药物缓释体系及纳米技术在抗菌药物缓释体系中的应用,并指出高分子前药控释体系的研究和应用是抗高分子医用材料感染的发展趋势.     

快速空间测角系统中偏振像差的分析与研究

快速空间测角系统需要在一定的平移范围内均能实现测量功能,这就要求光束在接收单元具有一定的覆盖面积.受器件尺寸所限,选择对入射光束进行扩束,然而非正入射光经过系统会产生偏振态变化,存在偏振像差,引起测量误差.本文通过采用偏振光线追迹的方法,结合电磁场的边界条件,对快速空间测角系统中一定方位及入射角范围内的光束通过偏振棱镜后出射光束的偏振态变化与分布进行了理论研究及仿真分析;并通过搭建实验平台,利用平移接收单元来模拟不同的入射方位及角度变化.根据实验值与仿真结果的对比分析,得出在方位角为0o时,测量误差较小,在方位角为90o时,测量误差最大,且随平移距离(即入射角)的增大,测角误差增大.验证了偏振像差的存在对系统测角带来的影响及理论分析的正确性,并提出了改进措施.所得研o究结果对优化系统结构并进一步提高系统性能具有一定的指导意义.     

一种多通道光电系统视轴平行度调校装置

为了获得红外、可见光及微光等不同波段靶标的图像,提出一种多通道光电系统视轴平行度调校装置。该装置能够方便地加载多通道光电探测系统,主要通过下底板的腰形孔间隙及垫修下底板来实现光电探测系统视轴平行度方位及俯仰方向的调校,使其视轴平行度达到15;该装置只需首次调整光学系统的视轴平行度,光电探测系统重复更换镜头后重复定位精度优于0.01 mm。同时装置可方便地加载于光电转台等其他设备上,便于外场试验,满足使用要求。     

热处理对SILAR法制备CuInSe2薄膜性能的影响

CuInSe₂ ternary films were prepared by successive ionic layer absorption and reaction (SILAR) method. The films were deposited on glass substrates at room temperature and subject to heat-treatment under Ar atmosphere at various calcination temperatures, and then characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), optical absorption spectroscopy. XRD results showed that chalcopyrite structure CuInSe₂ with high degree of preferred orientation towards (112) reflection could be obtained by post-heat treatment. The compositions of films calcined at 300～400 ℃ were close to the standard stoichiometry and Cl impurity decreased after calcination. The direct band gap increased from 0.94 eV to 0.98 eV with the increase of calcination temperature.