面向嵌入式平台的轻量化神经网络手势识别方法

针对传统基于图像分割和特征提取的手势识别算法在复杂背景下识别准确率低、灵活性差的问题,基于目标检测神经网络的手势识别算法可以有效提高复杂环境下手势识别的准确性。受嵌入式处理器体积和功耗的限制,常用的目标检测神经网络在嵌入式上的识别速度较低,不能满足实时手势识别的要求。在SSD目标检测的基础上对其进行优化,使用MobileNetv3网络实现特征提取,目标检测方面则是使用SSD-lite结构,其使用深度可分离卷积替代普通卷积,实现了轻量化MobileNetv3-SSDLite手势识别算法的设计。针对手势识别的要求,制作了包含不同手势的数据集,利用它在服务器上完成了模型的训练。为了满足嵌入式的算力限制,通过模型的量化压缩将float64的网络参数量化为int8,并压缩网络结构,提高网络在嵌入式上的推理速度,实现基于嵌入式的手势识别。实验结果表明,基于嵌入式的MobileNetv3-SSDLite手势识别算法可以达到平均准确率99.61%,且识别速度达到每秒50帧以上,满足实时手势识别的要求。     

Na0.25K0.25Bi0.5TiO3无铅压电陶瓷的介电特性研究

用固相反应法制备了Na_0.25K_0.25Bi_0.5TiO₃ (NKBT50)陶瓷，研究了该陶瓷在室温至400℃温度范围内的介电性能.发现该陶瓷的介电温谱与烧结气氛、极化状态有关.在空气中烧结的未极化样品在70℃附近存在介电和损耗峰，而极化后及在氧气氛中烧结的样品并不存在该介电、损耗峰.分析认为70℃的介电和损耗峰与氧空位形成的缺陷偶极子的极化弛豫有关.热激电流显示，陶瓷的去极化温度为225℃，与此相对应的介电、损耗峰也 关键词： 介电性能 氧空位 极化弛豫 钛酸铋钠钾     

Local Piezoresponse and Thermal Behavior of Ferroelastic Domains in Multiferroic BiFeO3 Thin Films by Scanning Piezo-Thermal Microscopy

A dual probe, i.e., high resolution scanning piezo-thermal microscopy, is developed and employed to characterize the local piezoresponse and thermal behaviors of ferroelastic domains in multiferroic BiFeO3 thin films. Highly in- homogeneous piezoelectric responses are found in the thin film. A remarkably local thermal transformation across ferroelastic domain walls is clearly demonstrated by the quantitative 3w signals related to thermal conductivity. Different polarization oriented ferroelastic domains are found to exhibit different local thermal responses. The underlying mechanism is possibly associated with the inhomogeneous stress distribution across the ferroelastic domain wails, leading to different phonons scattering contributions in the BiFeO3 thin film.     

Acoustic Imaging Frequency Dynamics of Ferroelectric Domains by Atomic Force Microscopy

We report the acoustic imaging frequency dynamics of ferroelectric domains by low-frequency acoustic probe microscopy based on the commercial atomic force microscopy. It is found that ferroelectric domain could be firstly visualized at lower frequency down to 0.5 kHz by AFM-based acoustic microscopy. The frequency-dependent acoustic signal revealed a strong acoustic response in the frequency range from 7kHz to 10 kHz, and reached maximum at 8.1 kHz. The acoustic contrast mechanism can be ascribed to the different elastic response of ferroelectric microstructures to local elastic stress fields, which is induced by the acoustic wave transmitting in the sample when the piezoelectric transducer is vibrating and exciting acoustic wave under ac electric fields due to normal piezoelectric effects.     

抗拉可压型压电陶瓷性能测试及疲劳试验

压电陶瓷是自适应光学系统中的核心器件变形镜的主要作动元件,其性能的好坏直接影响变形镜甚至自适应光学系统校正能力。开展了加载电压为±350 V、外形尺寸为5 mm×5 mm×38 mm的抗拉可压型压电陶瓷的性能测试,包括位移、迟滞、电容、阻抗和热膨胀系数等,对压电陶瓷的抗拉能力进行了考核,获得三个样品抗拉能力均大于250 N。采用疲劳测试仪对同批次生产的压电陶瓷进行疲劳试验,在此过程中获得了压电陶瓷的压电效应并对试验数据进行了分析,最后对5#样品进行了1 000万次疲劳试验（±150 N@5 Hz正弦载荷）,试验后压电陶瓷的位移减小约5%,其他指标变化较小。通过抗拉能力测试和疲劳试验,初步考核了该型压电陶瓷的抗拉压特性和疲劳特性以及压电陶瓷的使用寿命,为变形镜的研制提供一定的数据支撑。     

非化学计量和掺杂对(Na_(1/2)Bi_(1/2))_(0.92)Ba_(0.08)TiO_3陶瓷电性能的影响

研究了非化学计量和掺杂对无铅压电陶瓷 (Na1 2 Bi1 2 ) 0 .92 Ba0 .0 8TiO3的压电性能及去极化温度的影响 .研究发现A位非化学计量可以提高陶瓷的压电性能 ;B位掺杂对材料电学性能的影响规律类似于Pb(Ti,Zr)O3系压电陶瓷的相关规律 ;由于非化学计量和掺杂会影响到A位离子对B位离子与氧离子形成的BO6 八面体的耦合作用 ,影响到畴的稳定性 ,从而影响到 (Na1 2 Bi1 2 ) 0 .92 Ba0 .0 8TiO3陶瓷的去极化温度 ;所研究的陶瓷样品的去极化温度越低 ,压电系数越高 .     

Ti3C2Tx-MXene-聚二烯丙基二甲基氯化铵-还原氧化石墨烯复合膜修饰电极检测碘酸盐

通过静电组装法制备了Ti₃C₂T_x-MXene-聚二烯丙基二甲基氯化铵(PDDA)-还原氧化石墨烯(r GO)复合材料(Ti₃C₂T_x-MXene-PDDA-r GO),将其修饰在玻碳电极(GCE)表面,用于碘酸盐的电化学检测。采用氢氟酸(HF)刻蚀钛碳化铝(Ti₃Al C₂)法制备了Ti₃C₂T_x-Mxene,以水合肼为还原剂制备了PDDA功能化的r GO(PDDA-r GO)。将MXene加入PDDA-r GO分散液中,通过带正电的PDDA与表面带负电荷的Ti₃C₂T_x-MXene间的静电相互作用,制得Ti₃C₂T_x-MXene-PDDA-r GO复合材料。采用扫描电镜(SEM)、能谱(EDS)、X射线粉末衍射仪(...     

非化学计量和掺杂对(Na1/2Bi1/2)0.92Ba0.08TiO3陶瓷电性能的影响

研究了非化学计量和掺杂对无铅压电陶瓷(Na_1/2Bi_1/2)_0.92Ba_0.08TiO₃的压电性能及去极化温度的影响.研究发现A位非化学计量可以提高陶瓷的压电性能;B位掺杂对材料电学性能的影响规律类似于Pb(Ti,Zr)O₃系压电陶瓷的相关规律;由于非化学计量和掺杂会影响到A位离子对B位离子与氧离子形成的BO₆八面体的耦合作用,影响到畴的稳定性,从而影响 关键词： 无铅压电陶瓷 非化学计量 掺杂 电性能     

An Alternating-Current Voltage Modulated Thermal Probe Technique for Local Seebeck Coefficient Characterization

Nanostructured and nanocomposite thermoelec- tric materials have recently attracted a great deal of attention due to the optimization of thermal and electrical transports for high thermoelectric performance The initial ideas for the applica- tions of nano-structures in thermoelectric materials are that the lattice thermal conductivity can be de- pressed by the scattering of nano-particles or nano- boundaries as well as the enhanced electron density of states at the Fermi level. The latter is expected to enhance Seebeck coefficients due to the fact that the low energy carriers can be filtered by nano-sized grain boundaries. Lowered thermal conductivity and enhanced thermoelectric figure of merit have been ob- served in lots of bulk materials with nanostructures or nano-impurities. However, the thermal and electrical transports in these nano-materials are usually mea- sured by normal commercial systems, in which only the statistical values of the transports are obtained. The characterization of local thermoelectric parame- ters still remains a challenging task at the submicro, even nanometer level as a powerful tool for Scanning probe microscopy nanostructure imaging and local properties characterization, has become a promis- ing technique for measuring local thermal and electri- cal properties, like scanning tunneling microscopy, scanning thermal microscopy, and scanning Joule expansion microscopy. Recent work has demon- strated simultaneously determined the thermal con- ductivity and Seebeek coefficient of Bi2Se3 thin film by a microprobe technique.     

PZT铁电薄膜纳米尺度铁电畴的场致位移特性

利用扫描力显微术的压电响应模式，并基于逆压电效应原理，研究了梯度组成的PZT铁电薄膜纳米尺度铁电畴的场致位移特性.获得了源于纳米尺度铁电畴的压电效应和电致伸缩效应贡献的场致位移回滞线，以及源于线性压电效应和电畴反转效应综合贡献的纳米尺度压电位移 场强蝶形曲线，证实了Caspari Merz理论在纳米尺度上的有效性.发现了梯度铁电薄膜存在纳米尺度印刻现象，认为该现象的内因源于薄膜中的内偏场. 关键词： PZT铁电薄膜 场致位移 纳米尺度 扫描力显微术