水冷却对高温花岗岩的细观损伤及动力学性能影响

为探讨高温花岗岩经水冷却后的细观结构损伤及动态力学性能,对水冷却后高温花岗岩开展波速和核磁共振测试,分离式霍普金森压杆冲击试验,以及冲击破碎试样的扫描电镜观察,分析比较不同状态下花岗岩波速、孔隙度和动力学参数的变化规律。研究发现:随着温度升高,经水冷却处理后高温花岗岩波速非线性下降,大孔径孔隙度分量增大,且水冷却后试样的孔隙孔径尺寸和数量均大于自然冷却;水冷却后高温花岗岩动力学参数呈现出随着温度升高,峰值应力减小,峰值应变增大,弹性模量则先增大后减小的规律;由于水冷却使高温花岗岩表面温度急剧降低,产生额外的温度应力,花岗岩内部损伤加剧,表现出更低的波速与峰值应力;而水的冷淬作用一定程度上提高了表层花岗岩的硬度,降低了高温后花岗岩的塑性能力,与自然冷却相比水冷却后花岗岩的峰值应变减小,弹性模量增大,表现出脆性破坏特征。在温度低于400℃时,冷却方式对冲击裂纹影响不大,随着温度升高到800℃,自然冷却后花岗岩冲击断面呈蜂窝状,而水冷却后冲击断面则相对平整。     

Si3N4陶瓷与灰铸铁配副的摩擦学性能

在Ｍ－２００磨损试验机上于无润滑、蒸馏水润滑、乳化液润滑和１０＾＃机构油润滑４种条件下，对Ｓｉ３Ｎ４陶瓷分别与灰铸铁ＨＴ和Ｔ８钢配副进行了摩擦损性能的对比试验研究。结果表明：Ｓｉ３Ｎ４陶瓷与灰铸铁ＨＴ配副时的摩擦因数和磨损体积在几种润滑环境中均表现出同样的顺序     

SBN晶体中Eu^3＋激光态^5D0的无辐射跃迁

通过测量＾５Ｄ０→７Ｆ２发射带的荧光寿命与晶体温度的依赖关系，研究了Ｅｕ＾３＋激发态＾５Ｄ０的无辐射跃迁。结果表明，＾５Ｄ０→Ｆ２带的温度淬灭效应主要是由于电荷转移态的最低能量太低，＾５Ｄ０态易被热激活至电荷转移，然后通过电荷转移无辐射驰豫至＾７Ｆ０态。     

Landsat-8的舟山近岸海域总悬浮物遥感反演与时空变异研究

总悬浮物(TSM)是海洋水质和水环境评价的主要参数之一。舟山海域位于杭州湾边缘,泥沙含量多,总悬浮物长期处于高浓度状态,其分布与动态变化对近岸水质、水循环以及该区域的渔业、旅游业都有较大影响。Landsat-8卫星影像作为一种应用广泛、空间分辨率高、便于获取的光学信息,可以为舟山海域的TSM观测提供有力的技术手段。利用舟山近岸海域实测TSM吸收系数a_p(440)和水面光谱,开发了基于Landsat-8反演TSM的最优模型,发现基于近红外和蓝色波段比B5/B2的S-函数和线性函数模型反演精度较好,相对于线性模型,S-函数具有更强的鲁棒性,该模型形式为a_p=3.72/(0.009+e-5.249B5/B2),克服了常用函数模型（如线性、对数、指数函数）应用于实际卫星影像时出现光谱幅度范围受限的困难。海岸带内陆复杂水体水色遥感的另一难点是大气校正,以往的研究往往只采用某种大气校正模型,但该模型不一定适合研究水域,从而使得校正结果并不一定是最优的。在本研究中,验证比较了FLAASH,6S和ACOLITE三种大气校正方法面向Landsat-8水色反演的校正结果,发现ACOLITE方法获取的光谱形状最准确,误差最小,特别在蓝色波段,明显好于FLAASH和6S方法。将最优模型应用于舟山近岸海域2013到2018年的10幅Landsat-8图像。实测数据和反演结果显示：舟山近岸海域的TSM吸收系数a_p(440)的变化范围在1.64～417.04 m-1,均值118.47 m-1,TSM吸收占水体总吸收的90%以上,该海域实测的水面光谱形状呈现典型的河口海岸带复杂浑浊水体的光谱特征,很多光谱曲线具有双峰特征,遥感反射率幅值较大,特别是红色、近红外波段,由于受河口高浓度TSM的影响,遥感反射率高于远海较清洁的海水;衢山、洋山、宁波等近岸区域的TSM浓度明显高于东极、嵊泗等远海区域,随河口羽化区呈现由高到低的梯度变化,在近岸区域分布复杂,外海区域分布较为均匀。在时间分布上具有冬季浓度远高于夏季的特点,其中12月最高,最大值为413.32 m-1,8月最低,最小值为3.69 m-1,5月、10月期间也有TSM的局部峰值。这些TSM时空变异特征表明舟山海域悬浮物的分布和变化一方面受地形、海流、潮汐、季风、台风等自然环境因素的影响,另一方面也受如海运、港口建设、海岛旅游等人类活动的较大影响。     

利用Gupta势结合遗传算法研究ConCu55－n(n=0—55)混合团簇的结构演化及基态能量

采用半经验的Gupta多体势结合遗传算法对Co_nCu_55－n(n=0—55)混合团簇的基态结构和能量进行了研究,发现这些混合团簇的基态结构是在Co₅₅,Cu₅₅单质团簇(Mackay二十面体)的基础之上发生的畸变;从n=0(Cu₅₅)开始,Co原子从中心到表面,从棱到顶点依次、连续替换Cu原子;基态结构与键能较大键的数目及其平均键长有关;Co₁₃Cu₄₂具有最稳定的结构,13个Co原子全部位于团簇内部形成Mackay二十面体对整个团簇的稳定性有显著影响. 关键词： 团簇 结构和能量 Gupta势 遗传算法     

Semiconductor-Optical-Amplifier-Based Inverted and Non-Inverted Wavelength Conversion at 40 Gb/s Using a Detuning Optical Bandpass Filter

We experimentally demonstrate 40Gb/s semiconductor-optical-amplifier-based tunable wavelength conversion （WC） using a detuning optical bandpass filter. Both inverted and non-inverted WCs are obtained by shifting the filter central wavelength with respect to the probe wavelength. When the filter is red shifted by 0.4nm or blue shifted by 0.3nm, the WC is non-inverted. However, when the filter is blue shifted by 0.1 nm, the WC is inverted. It is experimentally demonstrated that the WC has a tunable range covering the C-band.     

Coherent Scattering of Light by Bose-Einstein Condensation in a Tight Confinement

We have observed strong scattering of a probe light by dilute Bose-Einstein condensate （BEC） ^87Rb gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap.     

All-Optical RZ-to-NRZ Format Conversion with a Tunable Fibre Based Delay Interferometer

All-optical format conversion from return-to-zero （RZ） to non-return-to-zero （NRZ） is demonstrated with temperaturecontrolled all-fibre delay interferometer （DI） at 20 Gb/s. The operation principle is theoretical analysed with the help of numerical simulation and spectra analysis. Theoretical analysis results are consistent well with the experimental results. The format conversion can be achieved with power penalty of 0.54 dB and with output extinction ratio 20 dB.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Ab Initio Comparative Study of Zincblende and Wurtzite ZnO

By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices.