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31.
总悬浮物(TSM)是海洋水质和水环境评价的主要参数之一。舟山海域位于杭州湾边缘,泥沙含量多,总悬浮物长期处于高浓度状态,其分布与动态变化对近岸水质、水循环以及该区域的渔业、旅游业都有较大影响。Landsat-8卫星影像作为一种应用广泛、空间分辨率高、便于获取的光学信息,可以为舟山海域的TSM观测提供有力的技术手段。利用舟山近岸海域实测TSM吸收系数ap(440)和水面光谱,开发了基于Landsat-8反演TSM的最优模型,发现基于近红外和蓝色波段比B5/B2的S-函数和线性函数模型反演精度较好,相对于线性模型,S-函数具有更强的鲁棒性,该模型形式为ap=3.72/(0.009+e-5.249B5/B2),克服了常用函数模型(如线性、对数、指数函数)应用于实际卫星影像时出现光谱幅度范围受限的困难。海岸带内陆复杂水体水色遥感的另一难点是大气校正,以往的研究往往只采用某种大气校正模型,但该模型不一定适合研究水域,从而使得校正结果并不一定是最优的。在本研究中,验证比较了FLAASH,6S和ACOLITE三种大气校正方法面向Landsat-8水色反演的校正结果,发现ACOLITE方法获取的光谱形状最准确,误差最小,特别在蓝色波段,明显好于FLAASH和6S方法。将最优模型应用于舟山近岸海域2013到2018年的10幅Landsat-8图像。实测数据和反演结果显示:舟山近岸海域的TSM吸收系数ap(440)的变化范围在1.64~417.04 m-1,均值118.47 m-1,TSM吸收占水体总吸收的90%以上,该海域实测的水面光谱形状呈现典型的河口海岸带复杂浑浊水体的光谱特征,很多光谱曲线具有双峰特征,遥感反射率幅值较大,特别是红色、近红外波段,由于受河口高浓度TSM的影响,遥感反射率高于远海较清洁的海水;衢山、洋山、宁波等近岸区域的TSM浓度明显高于东极、嵊泗等远海区域,随河口羽化区呈现由高到低的梯度变化,在近岸区域分布复杂,外海区域分布较为均匀。在时间分布上具有冬季浓度远高于夏季的特点,其中12月最高,最大值为413.32 m-1,8月最低,最小值为3.69 m-1,5月、10月期间也有TSM的局部峰值。这些TSM时空变异特征表明舟山海域悬浮物的分布和变化一方面受地形、海流、潮汐、季风、台风等自然环境因素的影响,另一方面也受如海运、港口建设、海岛旅游等人类活动的较大影响。 相似文献
32.
We report new Raman features of epitaxial graphene (EG) on Si-face 4H-SiC prepared by pulsed electron irradiation (PEI). With increasing graphene layers, frequencies of G and 2D peaks show blue-shifts and approach those of bulk highly-oriented pyrolytic graphite. It is indicated that the EG is slightly tension strained and tends to be strain-free. Meanwhile, single Lorentzian line shapes are well fitted to the 2D peaks of EG on SiC(O001) and their full widths at half maximum decrease with the increasing graphene layers, which indicates that the multilayer EG on Si-face can also contain turbostratic stacking by our PEI route instead of only AB Bernal stacking by a traditional thermal annealing method. It is worth noting that the stacking style plays an important role on the charge carrier mobility. Therefore our findings will be a candidate for growing quality graphene with high carrier mobility both on the Si- and C-terminated SiC substrate. Mechanisms behind the features are studied and discussed. 相似文献
33.
采用半经验的Gupta多体势结合遗传算法对ConCu55-n(n=0—55)混合团簇的基态结构和能量进行了研究,发现这些混合团簇的基态结构是在Co55,Cu55单质团簇(Mackay二十面体)的基础之上发生的畸变;从n=0(Cu55)开始,Co原子从中心到表面,从棱到顶点依次、连续替换Cu原子;基态结构与键能较大键的数目及其平均键长有关;Co13Cu42具有最稳定的结构,13个Co原子全部位于团簇内部形成Mackay二十面体对整个团簇的稳定性有显著影响.
关键词:
团簇
结构和能量
Gupta势
遗传算法 相似文献
34.
Semiconductor-Optical-Amplifier-Based Inverted and Non-Inverted Wavelength Conversion at 40 Gb/s Using a Detuning Optical Bandpass Filter
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We experimentally demonstrate 40Gb/s semiconductor-optical-amplifier-based tunable wavelength conversion (WC) using a detuning optical bandpass filter. Both inverted and non-inverted WCs are obtained by shifting the filter central wavelength with respect to the probe wavelength. When the filter is red shifted by 0.4nm or blue shifted by 0.3nm, the WC is non-inverted. However, when the filter is blue shifted by 0.1 nm, the WC is inverted. It is experimentally demonstrated that the WC has a tunable range covering the C-band. 相似文献
35.
本文叙述了新铸铝光谱标样的制备过程,制备出的标样具有工艺先进,化学成分均匀,定值准确及校准曲线啮合系数高等特点。通过试用分析,结果与化学仲裁分析结果相符,很好地满足了光谱分析铸造铝合金化学成分对标样的需求。 相似文献
36.
We have observed strong scattering of a probe light by dilute Bose-Einstein condensate (BEC) ^87Rb gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap. 相似文献
37.
All-Optical RZ-to-NRZ Format Conversion with a Tunable Fibre Based Delay Interferometer 总被引:1,自引:0,他引:1
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All-optical format conversion from return-to-zero (RZ) to non-return-to-zero (NRZ) is demonstrated with temperaturecontrolled all-fibre delay interferometer (DI) at 20 Gb/s. The operation principle is theoretical analysed with the help of numerical simulation and spectra analysis. Theoretical analysis results are consistent well with the experimental results. The format conversion can be achieved with power penalty of 0.54 dB and with output extinction ratio 20 dB. 相似文献
38.
Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time
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Semi-insulating (SI) GaN is grown using N2 as the nucleation layer (NL) carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared. 相似文献
39.
Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer
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A new A1GaN/A1N/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm. 相似文献
40.
By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices. 相似文献