Supramolecular Terbium-SIP Complex Pillared by 4,4'-Bipyridyl,{[Tb(SIP)(H_2O)_5]_2(bpy)_3(H_2O)}n:Synthesis,Crystal Structure and Photoluminescence

The supramolecular terbium complex, {[Tb(SIP)(H2O)5]2(bpy)3(H2O)}n (NaH2SIP= 5-sulfoisophthalic acid monosodium salt and bpy=4,4'-bipyridyl), has been synthesized by the hydrothermal reaction of Tb4O7 with NaH2SIP and bpy at 165 ℃, and characterized by single-crystal X-ray diffraction, elemental analysis, IR spectrum, powder X-ray diffraction and photoluminescence spectrum. It crystallizes in a monoclinic system, space group C2/c, with a= 30.6840(1), b=10.9206(2), c=17.4967(3), β=111.931(1)o, V=5438.65(14)3, Z=4, C46H52N6O25S2Tb2, Mr=1470.90, Dc=1.796 g/cm3, μ=2.747 mm-1, F(000)=2928, the final R= 0.0654 and wR=0.1322 for 3806 observed reflections with I > 2σ(I). In the neutral [Tb(SIP)(H2O)5]2 motif, the Tb(III) ions are linked by the SIP ligands to form a one-dimensional zigzag chain propagating along the c axis. The zigzag chains are linked together by hydrogen bonds and π-π stacking interactions to form a two-dimensional supramolecular framework. The uncoordinated bpy molecules act as pillars to extend the two-dimensional sheets into a distinctive pillared three-dimensional supramolecular structure through O-H···N hydrogen bonds. The photoluminescence of the complex was investigated at room temperature in the solid state.     

QuEChERS-在线凝胶色谱-气相色谱-质谱法测定大米、黍子和小麦中34种农药残留

采用QuEChERS方法结合在线凝胶色谱-气相色谱-质谱（GPC-GC-MS）系统,建立了大米、黍子和小麦中34种中高毒农药的快速筛查方法。研究了称样量、萃取剂、净化吸附剂种类对大米样品提取净化效果的影响并考察了基质效应和分析保护剂的使用效果,采用选择离子监测（SIM）模式,外标法定量。结果表明,34种农药在大米、黍子和小麦中的检出限分别为0.0281~5.30、0.0282~4.82、0.0273~5.13 μg/kg;在0.05 μg/g添加水平的平均回收率分别为94.5%~117.1%、83.1%~121.7%、93.1%~120.2%;相对标准偏差（RSD,n=6）分别为2.6%~14.5%、3.4%~15.1%、3.5%~15.2%。该方法消耗试剂少,分析成本低,符合绿色化学的理念,具有操作便捷、快速、通用性强等特点,适用于大米、黍子和小麦中34种农药残留的快速筛查与检测。     

基于能量变分法的钢底板波形钢腹板组合箱梁畸变效应分析

为合理分析钢底板波形钢腹板梯形箱梁的畸变效应,按各板件面内外抗弯刚度不变的原则将全截面等效为钢材,利用圣维南原理考虑顶底板对波形钢腹板的约束作用,修正畸变扇性坐标分布模式,基于能量变分法建立畸变控制微分方程。与已有文献及有限元进行对比分析,并研究腹板俯角和波形钢腹板厚度变化对畸变翘曲正应力的影响。结果表明,本文解析解与文献解及ANSYS解均吻合较好;基于圣维南原理修正后的扇形坐标分布模式更合理;利用本文等效方法亦可分析传统波形钢腹板组合箱梁的畸变效应;腹板俯角的设置有利于减小畸变翘曲正应力;波形钢腹板厚度变化对腹板与底板交接处的畸变翘曲正应力影响显著。     

Si3N4陶瓷与灰铸铁配副的摩擦学性能

在Ｍ－２００磨损试验机上于无润滑、蒸馏水润滑、乳化液润滑和１０＾＃机构油润滑４种条件下，对Ｓｉ３Ｎ４陶瓷分别与灰铸铁ＨＴ和Ｔ８钢配副进行了摩擦损性能的对比试验研究。结果表明：Ｓｉ３Ｎ４陶瓷与灰铸铁ＨＴ配副时的摩擦因数和磨损体积在几种润滑环境中均表现出同样的顺序     

先进的微生物芯片检测系统及其应用

发展了一种先进的微生物芯片检测方法,并研制用于芯片检测的新型数字化成像扫描检测系统。采用激光诱导荧光的检测原理设计一种新颖的CCD数字化成像扫描检测系统结构,荧光信号采集端的数值孔径NA=0．72,工作距离3．22 mm,系统检测灵敏度小于每平方微米1个荧光分子。以微生物大肠杆菌和黄单胞菌检测为例,设计基因芯片,并应用所研制的芯片检测系统实现了微生物的正确鉴定,提供了一种高效的食品安全检测整体解决方法。实验结果表明两种微生物的芯片检测实验结果稳定可靠,与国外共焦扫描仪检测的结果完全一致。     

新铸光谱标样的制备和定值分析结果

本文叙述了新铸铝光谱标样的制备过程，制备出的标样具有工艺先进，化学成分均匀，定值准确及校准曲线啮合系数高等特点。通过试用分析，结果与化学仲裁分析结果相符，很好地满足了光谱分析铸造铝合金化学成分对标样的需求。     

Coherent Scattering of Light by Bose-Einstein Condensation in a Tight Confinement

We have observed strong scattering of a probe light by dilute Bose-Einstein condensate （BEC） ^87Rb gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap.     

All-Optical RZ-to-NRZ Format Conversion with a Tunable Fibre Based Delay Interferometer

All-optical format conversion from return-to-zero （RZ） to non-return-to-zero （NRZ） is demonstrated with temperaturecontrolled all-fibre delay interferometer （DI） at 20 Gb/s. The operation principle is theoretical analysed with the help of numerical simulation and spectra analysis. Theoretical analysis results are consistent well with the experimental results. The format conversion can be achieved with power penalty of 0.54 dB and with output extinction ratio 20 dB.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.