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41.
The direct replication of W/Si supermirrors is investigated systematically. W/Si supermirrors are fabricated by direct current(DC) magnetron sputtering technology. After deposition,the supermirrors are replicated from the supersmooth mandrels onto ordinary float glass substrates by epoxy replication technique. The properties of the supermirrors before and after the replication are characterized by grazing incidence X-ray reflectometry(GIXR) measurement and atomic force microscope(AFM) . The results show that before and after replication,the multilayer structures are almost the same and that the surface roughness is 0.240 and 0.217 nm,respectively,which are close to that of the mandrel. It is demonstrated that the W/Si supermirrors are successfully replicated from the mandrel with good performance.  相似文献   
42.
为满足同步辐射装置中X射线单色器的需求,在直线式磁控溅射设备上制备了W/Si和Ru/C双通道多层膜反射镜。制备的W/Si多层膜和Ru/C多层膜的周期厚度均为3 nm,平均界面宽度分别为0.30 nm和0.32 nm。在320 mm长度范围和20 mm宽度范围内,W/Si多层膜膜厚误差的均方根值分别为0.30%和0.19%,Ru/C多层膜膜厚误差的均方根值分别为0.39%和0.20%。对制备的样品进行了表面形貌测试和非镜面散射测试,对比了W/Si多层膜和Ru/C多层膜的表面和界面粗糙度大小。硬X射线反射率测试结果表明,W/Si多层膜和Ru/C多层膜在8.04 keV能量点处的一级布拉格峰测试反射率分别为63%和62%,角分辨率均为2.6%。基于以上研究,在尺寸为350 mm×60 mm的高精度Si平面镜表面镀制了W/Si和Ru/C双通道多层膜,并且其被成功应用于上海同步辐射光源线站中。  相似文献   
43.
44.
 提出了利用多层膜聚光镜提高Schwarzschild显微镜成像均匀性的方法。设计了聚光镜的光学结构,使80%的等离子体辐射能量会聚在约0.8 mm直径的范围内。根据成像系统的工作波长和光线在聚光镜表面的入射角度,设计了Mo/Si周期多层膜,制备了聚光镜光学元件,膜层周期厚度为9.64 nm,周期数为30,对18.2 nm波长的峰值反射率为51.7%。利用所设计的聚光镜作为照明系统,对Schwarzschild物镜进行了网格成像实验。结果表明:在1.2 mm视场内可以实现2.5 μm的空间分辨力,并且完全消除了物镜中心遮拦所造成的像面光强分布不均匀性。  相似文献   
45.
极紫外、X射线和中子光学为现代科学的发展提供了高精度的观测手段,但这些手段的实现需要大量高性能薄膜光学元件和系统的支撑。由于短波长和材料光学常数的限制,短波光学元件的结构、性能和制作技术明显区别于长波光学元件。近二十年来,同济大学精密光学工程技术研究所建立了以短波反射镜为基底的精密加工检测平台,发展了超薄薄膜界面生长调控方法和大尺寸薄膜镀制技术,提出了高效率/高分辨率多层膜微纳结构的衍射理论和制备方法,初步阐明了短波辐照损伤的物理机制,形成了短波薄膜和晶体聚焦成像系统的高精度全流程研制技术,并将该技术成功应用于国内和国际短波光子大科学装置中。本文简要介绍本课题组在上述短波元件和系统领域中的研究进展。  相似文献   
46.
为制备硼边附近6.7 nm波长的极紫外高反射率多层膜反射镜,研究了Mo_2C/B_4C,Mo/B_4C周期多层膜,重点解决薄膜应力难题。采用直流磁控溅射技术制备了膜层厚度为30 nm的Mo,Mo_2C,B_4C,单层膜,周期厚度为3.5 nm,30对的Mo_2C/B_4C,Mo/B_4C周期多层膜。利用台阶仪测试了镀膜前后基底面形,计算并比较了不同薄膜样品的应力值。结果表明Mo_2C/B_4C多层膜压应力要远小于Mo/B_4C多层膜,且成膜质量与Mo/B_4C相当。因此Mo_2C/B_4C是应用于6.7 nm反射镜较好的多层膜材料组合。  相似文献   
47.
采用耦合波理论分析了X射线在多层膜Laue透镜中的传播,选择Cu的Kα线作X射线光源,计算了多层膜Laue透镜的衍射效率.材料为WSi2/Si,最外层宽度为10 nm,深度为8 500 nm的多层膜Laue透镜,倾斜情况下外层区域局部光栅的衍射效率可达59%,理论上证明了多层膜Laue透镜是实现X射线聚焦的有效手段.  相似文献   
48.
We report on the optical performance, structure and thermal stability of periodic multilayer films con- taining Zr and Al(lwt.-%Si) or Al(pure) layers designed for the use as extreme ultraviolet (EUV) high reflective mirrors in the range of 1~19 am. The comparison of A1/Zr (Al(lwt.-%Si)/Zr and Al(pure)/Zr) multilayers fabricated by direct-current magnetron sputtering shows that the optical and structural per- formances of two systems have much difference because of Si doped in A1. From the results of grazing incidence X-ray reflection (GIXR), X-ray diffraction (XRD), and EUV, the Si can disfavor the crystalliza- tion of AI and smooth the interface, consequently increase the reflectance of EUV in the Al(lwt.-%Si)/Zr systems. For the thermal stability of two systems, the first significant structural changes appear at 250 ~C. The interlayers are transformed from symmetrical to asymmetrical, where the Zr-on-A1 interlayers are thicker than Al-on-Zr interlayers. At 295 ~C for Al(pure)/Zr and 298 ~C for Al(lwt.-%Si)/Zr, the interfaces consist of amorphous Al-Zr alloy transform to polycrystalline Al-Zr alloy which can decrease the surface roughness and smooth the interfaces. Above 300 ~C, the interdiffusion becomes larger, which can enlarge the differences between Zr-on-Al and Al-on-Zr interlayers. Based on the analyses, the Si doped in Al cannot only influence the optical and structural performances of Al/Zr systems, but also impact the reaction temperatures in the annealing process.  相似文献   
49.
为了实现接近衍射极限的分辨率,工作在极紫外波段的Schwarzschild物镜要求其光学元件的面形精度达到约1 nm(RMS值);而在物镜的装配过程中,装卡产生的应力会影响光学元件的面形精度,定量计算装卡应力对元件面形的影响是获得高分辨率成像的关键。在光学设计、公差分析的基础上,采用有限元模型系统地分析了应力对Schwarzschild物镜光学元件面形精度的影响。结果表明:采用自行设计的物镜结构,应力对主镜面形的影响可以达到0.7 nm,而对副镜的影响可以忽略;应力所产生的光学元件面形变化会使系统的几何传递函数(5000 lp/mm)从0.76下降到0.61。  相似文献   
50.
Intrinsic stresses of carbon films deposited by direct current (DC) magnetron sputtering were investigated. The bombardments of energetic particles during the growth of films were considered to be the main reason for compressive intrinsic stresses. The values of intrinsic stresses were determined by measuring the radius of curvature of substrates before and after film deposition. By varying argon pressure and target-substrate distance, energies of neutral carbon atoms impinging on the growing films were optimized to control the intrinsic stresses level. The stress evolution in carbon films as a function of film thickness was investigated and a void-related stress relief mechanism was proposed to interpret this evolution.  相似文献   
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