q软X光多层镜反射率在同步辐射源上的标定

软X光多层镜反射率标定实验在北京同步辐射装置上进行,利用BSRF-3W1B 束线及其反射率计靶室(主靶室)标定不同材料的多层镜样品的反射率.多层镜的标定采用波长扫描法,以得到样品反射率随波长变化的曲线.给出了21°-B4C/Si,21°-B4C/Mo,10°-Cr/Ti,15°- B4C/W,10°- B4C/W以及6.86°-B4C/W等6块多层镜在50～1 500 eV能段上的反射率标定曲线,并将其与理论计算结果进行比较.结果表明标定曲线与理论曲线很好地符合.影响标定结果的总不确定度的主要因素是光子能量不确定度,其次是角度不确定度,测量不确定度的影响很小.     

光电耦合器的反应堆中子辐射效应

选择3种典型光电耦合器开展了反应堆中子辐照实验,中子注量为3×1011~5×1012cm-2时,位移效应导致电流传输比下降,饱和压降提高。发光器件相同,探测器为Si PIN光电二极管的光电耦合器比探测器为Si NPN光敏晶体管的光电耦合器的初始电流传输比要小,但其抗位移损伤能力更强。探测器均为Si NPN光敏晶体管,发光器件为异质结LED要比硅两性掺杂LED的光电耦合器的电流传输比抗位移损伤能力提高2个量级;以光敏晶体管为探测器的光电耦合器,在较大的正向电流和输出负载电阻条件下工作可提高抗辐射水平。此外,光电耦合器的位移损伤存在加电退火效应。     

Influence of working gas pressure on the performance of W/Si multilayers

The effect of Ar pressure on the performance of W/Si multilayers is investigated. W/Si multilayers were deposited by a high vacuum DC magnetron sputtering system. The Ar pressure was changed from 1.0 to 5.0 mTorr with an interval of 1.0 mTorr during the deposition process. Electron probe microanalysis and Rutherford backscattering are performed to determine the Ar content incorporated within these multilayers. The results demonstrate that less Ar is incorporated within the sample when more Ar is used in the plasma, which could be explained by the increase of the collision probability and the decrease in the kinetic energy of Ar ions arriving at the substrate when more Ar exists. The grazing incident X-ray reflectivity (GIXR) at 0.154 nm is used to determine the structural parameters of the layers. The results show that the structures of these multilayers prepared at different Ar pressure are very similar and that the interface roughness increases quickly when the Ar pressure is higher than 3.0 mTorr. The measurements of the extreme ultraviolet (EUV) reflectivity indicate that the reflectivity decreases when Ar pressure increases. The fitting results of GIXR and EUV reflectivity curves indicate that with an increase of Ar pressure, the density and decrement of the refractive index are increased for W and decreased for Si, which is mainly due to (1) the decrease in Ar content incorporated within these multilayers which affects their performance and (2) the increase of collision probability for sputtered W and Si, the decrease of their average kinetic energy arriving at the substrate, and thus the loosing of their layers.     

用于平面靶X射线诊断的1维KBA显微镜

对用于神光Ⅱ装置4.75 keV能点平面靶成像诊断的1维KBA显微镜进行了实验研究。基于空间分辨力和工作环境要求,设计了1维KBA显微镜的光学结构,并与传统KB显微镜的成像性能进行了对比分析。设计和制备了可同时工作于8 keV和4.75 keV能点的双能点多层膜KBA物镜,解决了系统装调问题。利用神光Ⅱ装置第九路激光打击Ti靶产生的X射线作为背光源照射1 500目金网,进行了4.75 keV网格成像实验,结果表明:在整个背光源照明区域内,系统的实际分辨力约为4 m,系统的有效视场受背光源大小的限制。     

低原子序数材料窄带多层膜的研制

为研制极紫外波段窄带多层膜反射镜,采用低原子序数材料组合设计了30.4 nm波长处Mg/SiC,Si/SiC,Si/B4C和Si/C多层膜反射镜,并与极紫外波段传统的Mo/Si多层膜反射镜进行对比。采用直流磁控溅射技术制备了这些多层膜,在国家同步辐射实验室辐射与计量光束线完成了多层膜反射率测量,测量结果表明:Mg/SiC多层膜的带宽最小,为1.44 nm,且反射率最高,为44%;而Mo/Si多层膜的反射率仅为24%,带宽为3.11 nm。实验结果证明了采用低原子序数材料组成的多层膜的带宽要比常规多层膜窄,该方法可以应用于极紫外波段高分辨研究。     

基于非周期多层膜的X射线成像研究

设计了惯性约束聚变（ICF）诊断实验用X射线Kirkpatrick-Baez（KB）显微镜,给出了系统的结构参量.使用ZEMAX光学软件对KB型显微镜进行了性能模拟,结果表明：在8 keV能点,放大率为8倍时,轴上点的最佳空间分辨率小于2 μm,200微米视场的空间分辨率优于10μm.采用磁控溅射方法制备了W/B4C非周期多层膜,经X射线衍射仪（XRD,工作能量8 keV）测量,其反射率为20％,带宽为0.3°,达到了KB型显微镜成像系统的要求.使用Cu靶X射线管进行了成像实验,得到了放大倍数分别为1倍和2倍的一维X射线像.     

X射线掠入射显微成像诊断技术研究进展

高精密的X射线成像诊断是深入理解内爆过程,揭示点火尺度下未知物理问题的关键。基于掠入射反射的X射线显微镜,结合亚纳米级的超光滑球面或非球面反射镜,能够实现空间分辨优于5 μm的高分辨成像。介绍了国际惯性约束聚变领域的X射线显微成像技术发展及应用,重点展示了我国在高分辨X射线（KB）显微镜、多通道X射线KB显微镜以及大视场X射线KBA显微镜方向的进展,分析了下一阶段超高分辨X射线显微成像的研究计划。通过不断的技术创新,我国的X射线显微成像诊断能力已经达到国际先进水平。