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以蛋氨酸和无水乙醇为原料,对甲苯磺酸为催化剂,苯为携水剂先合成蛋氨酸酯化物;将蛋氨酸酯化物再与亚硒酸钠按一定比例反应,经低温陈化、结晶,可得到螯合硒的蛋氨酸。通过微电泳法测定产物的Zeta电位,计算出等电点并利用等电点法对产物分离提纯。利用红外光谱、紫外光谱、X射线衍射法、1H核磁共振法对产物光谱性质进行分析,确定所制备的蛋氨酸螯合硒是以蛋氨酸中的硫原子和氨基中的氮原子为配体,Se4+为中心离子形成了六元环蛋氨酸螯合硒。 相似文献
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The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20 μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm. 相似文献
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玉米芯热解及过程分析 总被引:24,自引:4,他引:24
研究了农业废弃物玉米芯热解过程中气、液、固三相产率与裂解温度的关系;气相组成、液相组成与温度的关系,以及热解过程的机理。实验表明,在350℃~400℃,气相成分主要是CO2、CO所占比率为95%;随着温度的升高,H2、C2H4、CH4等气体的比率逐渐增高,CO、CO2的体积分数在逐渐降低。在450℃~500℃,CO、H2所占的比率达50%。GCMS,IR分析表明,裂解过程产生的液体主要是由含氧的化合物酚、呋喃及其衍生物组成;低温有利于酚类质量分数的增加,高温有利于4-乙基-2-甲氧基-苯酚、2-甲基-苯酚的增加;采用TGA分析,建立了热解过程的动力学方程,得到了热解过程的反应机理,即热解过程有两个分解阶段,在不同温度段具有不同的反应规律。在211℃~290℃具有三级反应的特征,其活化能为121.4kJ·mol-1;在290℃~418℃表现为0.5级反应的特征,其活化能为105.7kJ·mol-1。 相似文献
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The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/A1GaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm. 相似文献