全正色散高阶谐波锁模掺Yb光纤激光器

在全正色散(ANDi)系统中,报道了最高为21阶的被动谐波锁模(HML)掺Yb光纤激光器。利用级联长周期光纤光栅(C-LPFG)作为全光纤结构的光谱滤波器,以非线性偏振演化(NPE)效应作为锁模机理,得到了重复频率可调谐的被动谐波锁模掺Yb激光输出,实现输出脉冲重复频率1.544~32.42MHz的可调谐。并进一步论证了谐波阶次的提高不仅与抽运功率有关,而且与光纤的长度有关。     

Peakon Solutions to Supersymmetric Camassa-Holm Equation and Degasperis-Procesi Equation

In this paper,the supersymmetric Camassa-Holm equation and Degasperis-Procesi equation are derived from a general superfield equations by choosing different parameters.Their peakon-type solutions are shown in weak sense.At the same time,the dynamic behaviors are analyzed particularly when the two peakons collide elastically,and some results are compared with each other between the two equations.     

核子-核子短程关联对x>1区域原子核结构函数的影响

利用Jastrow关联波函数,重新讨论了核子-核子短程关联对原子核结构函数的作用,发现在选用正确的单粒子能量和包括核子间短程对关联效应在内的核子动量密度分布以后,并不能解释原子核结果函数在x>1区域的实验数据.     

Fe、Co、Ni混合团簇磁性的密度泛函研究

基于13原子二十面体结构,采用密度泛函方法系统计算研究了Fe、Co及Ni单质及二元混合团簇的磁性.发现有限温度下团簇磁性随结构畸变的敏感性随Fe、Co、Ni顺序逐渐减弱,同时发现二十面体结构Fe_(13)及Co_(13)均具有不同磁矩的近简并低能态.对FeNi及CoNi混合团簇、其磁矩随组分的变化不存在反常现象,但对于FeCo混合团簇、其磁矩随组分的演化行为存在个别反常现象.我们认为:这种反常现象能够对FeCo非晶合金中的实验观测结果提供一种可能的理论解释.     

厄尔尼诺和南方涛动海气耦合模型中参数估计的变分方法

提出一种基于变分原理估计厄尔尼诺和南方涛动海气耦合模型中未知参数的方法. 首先将所研究的非线性海气耦合动力方程引入到目标泛函中; 接着利用变分方法导出伴随方程和待辨识参数泛函梯度的公式; 然后设计了估计未知参数的算法.数值试验结果表明变分方法是一 种能有效估计海气耦合非线性系统未知参数的方法.     

Mn掺杂ZnO稀磁半导体材料的制备和磁性研究

采用共沉淀方法制备了名义组分为Zn_1-xMn_xO(x=0.001,0.005,0.007,0.01)的Mn掺杂的ZnO基稀磁半导体材料,并研究了在大气气氛下经过不同温度退火后样品的结构和磁性的变化.结果表明：样品在600℃的大气条件下退火后, 仍为单一的六方纤锌矿结构的ZnO颗粒材料;当样品经过800℃退火后,Mn掺杂量为0.007,0.01的样品中除了ZnO纤锌矿结构外还观察到ZnMnO₃第二相的存在.磁性测量表明,大气条件下600℃退火后的样品,呈现出室温铁磁性;而800℃退火后的样品,其室温铁磁性显著减弱,并表现为明显的顺磁性.结合对样品的光致发光谱的分析,认为合成样品的室温铁磁性是由于Mn离子对ZnO中的Zn离子的替代形成的. 关键词： ZnO 掺杂 稀磁半导体 铁磁性     

定向磁化多体环状永磁多极系统的场形分析

根据“均匀磁化”原理,用谐波分析的方法,分别对多体扇形及梯形磁体构成的两类环状系统的场形进行了分析。给出了它们空间任一点的三维表达式。同时还给出了多极场主波、寄生谐波,以及外部杂散磁场的二维解析表达式。对扇形及梯形磁体的优劣作了比较。     

新型宽谱电磁脉冲试验系统

 研制了一套新型宽谱电磁脉冲试验系统,该系统采用全电感隔离型重复频率Marx发生器产生高压冲击脉冲,经双极脉冲形成线馈入宽带天线进行宽谱辐射。介绍了发生器工作原理和双极脉冲形成原理。实验结果表明：发生器输出脉冲电压500 kV,脉冲前沿20 ns,重复频率20 Hz,宽谱辐射因子195 kV,辐射中心频率200 MHz,频谱宽度37%。该试验系统结构紧凑、操作灵活,并具有方位辐射方向360°旋转和运程控制等功能。     

Nitrogen Dioxide Sensing Properties and Mechanism of Copper Phthalocyanine Film

Copper phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based copper phthalocyanine film gas sensor for NO2 detection is fabricated by MEMS technology. The results show that the resistance and sensitivity of copper phthalocyanine film decrease obviously as the NO2 concentration increases from Oppm to lOOppm. However, the sensitivity nearly keeps a constant of O. 158 between 30 ppm and 70 ppm. The best working temperature of the gas sensor is 90℃ for NO2 gas concentrations of lOppm, 20ppm and 30ppm, which is much lower than that of general metal oxide gas sensor.     

Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.