排序方式: 共有75条查询结果,搜索用时 15 毫秒
61.
在MOCVD系统中用预淀积In纳米点低温下合成生长InN 总被引:2,自引:0,他引:2
利用低压金属有机化学气相淀积(LP-MOCVD)系统,在(0001)蓝宝石衬底上采用预淀积In纳米点技术低温合成制备了立方相的InN薄膜.首先以TMIn作源在蓝宝石衬底表面预淀积了一层金属In纳米点,然后在一定条件下合成生长InN薄膜.X射线衍射谱(XRD)和X射线光电子发射谱(XPS)显示适当的预淀积In不仅能够促进InN的生长,同时还能够抑制金属In在InN薄膜中的聚集.原子力显微镜(AFM)观察表明,金属In纳米点不仅增强了成核密度,而且促进了InN岛的兼并.自由能计算表明预淀积的In优先和NH3分解得到的NH与N基反应生成InN.我们认为这种优先生成的InN为接下来InN的生长提供了成核位,从而促进了InN的生长. 相似文献
62.
Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing
下载免费PDF全文
![点击此处可从《中国物理》网站下载免费的PDF全文](/ch/ext_images/free.gif)
The early stages of hydrogenated nanocrystalline silicon (nc-Si:H)
films deposited by plasma-enhanced chemical vapour deposition were
characterized by atomic force microscopy. To increase the density of
nanocrystals in the nc-Si:H films, the films were annealed by rapid
thermal annealing (RTA) at different temperatures and then analysed
by Raman spectroscopy. It was found that the recrystallization
process of the film was optimal at around 1000℃. The effects
of different RTA conditions on charge storage were characterized by
capacitance--voltage measurement. Experimental results show that
nc-Si:H films obtained by RTA have good charge storage
characteristics for nonvolatile memory. 相似文献
63.
64.
中国聚变工程试验堆(CFETR) 是一种新型的超导托卡马克装置, 极向场线圈(PF) 在控制等离子体位行中起着关键作用. CFETR PF 线圈导体由 Nb3Sn CICC 和 NbTi CICC 导体组成. 为了确保 PF 线圈的稳定运行, 本文采用1-D Gandalf 对不同机械扰动和电磁扰动下 PF 导体的稳定性裕度, 最小失超能量及温度裕度的进行了分析. 分析结果表明 CFETR PF 导体目前的设计能够充分满足安全裕度的要求 相似文献
65.
66.
过渡金属氧化物二氧化钒(VO2)在温度340 K附近会发生金属绝缘体的转变(metal-insulator transition, MIT). 基于金属绝缘体的转变性质, VO2薄膜材料具有很好的应用前景. 本文首先采用脉冲激光沉积制备了高质量的V2O5薄膜, 再通过高温氢退火还原V2O5薄膜制备出VO2多晶薄膜. 研究了不同的退火温度、退火时间、退火气氛对VO2薄膜制备的影响, 采用X射线衍射、X射线光电子能谱、变温电阻特性测量等手段对样品进行分析, 发现在H2(5%)/Ar退火气氛下, 在一定的退火温度范围内(500–525 ℃), 退火 3 h, 得到了B相和M相共存的VO2薄膜, 具有M相的VO2的MIT特性, 而相同退火温度下退火时间达到4.5 h, 薄膜完全变成B相的VO2. 通过纯Ar气氛下对B相VO2再退火, 得到了转变温度为350 K, 电阻突变接近4个数量级的M相的VO2薄膜. 实现了VO2的B相和M相的相互转变.
关键词:
2薄膜')" href="#">VO2薄膜
金属绝缘体转变
氢退火 相似文献
67.
Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Aluminum-oxide films deposited as gate dielectrics on germanium (Ge) by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation (OPO) treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment. 相似文献
68.
Field-effect transistors (FETs) for logic applications, graphene and MoS2, are discussed. These materials have based on two representative two-dimensional (2D) materials, drastically different properties and require different consider- ations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS2 is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors. 相似文献
69.
A NbTi 7 T superconducting magnet with a 338 mm bore system was rebuilt and the first experiment was carried out in Jan. 2009. The balancing-bridge method used for the quench detection system is analyzed and an improvement of the principle of balancing-bridge conformation is given. The inductances of the coils axe calculated to estimate the proportion of the bridge arms. The appropriate parameters axe selected for the balancing-bridge. 相似文献
70.
利用脉冲激光沉积的方法制备掺铒 Si/Al2O3多层结构薄膜,获得了由纳米结构的Si作为感光剂增强的Er3+在1.54 μm高效发光.利用拉曼散射、高分辨透射电镜和光致发光测量研究了在不同退火温度下(600—1000 ℃)纳米结构Si层的结晶形态变化,及对Er3+在1.54 μm的发光的影响特征.研究发现最佳发光是在退火温度600—700 ℃.在这个条件下纳米Si的尺寸和密度,Si和Er的作用距离以及Er3+
关键词:
铒
纳米硅
能量转移
氧化铝 相似文献