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硅锗异质结双极晶体管(SiGe HBT)一般以重掺硼(B)的应变SiGe层作为基区.精确表征SiGe材料能带结构对SiGe HBT的设计具有重要的意义.在应变SiGe材料中,B的重掺杂一方面会因为重掺杂效应使带隙收缩,另一方面,B的引入还会部分补偿Ge引起的应变,从而改变应变引起的带隙变化.在重掺B的应变SiGe能带结构研究中,采用半经验方法,考虑了B的应变补偿作用对能带的影响,对Jain-Roulston模型进行修正,并分析了重掺杂引起的带隙收缩在导带和价带的分布. 相似文献
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Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption (EA) modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for increasing the modulating efficiency and alleviating the sensitivity of the extinction ratio (ER) and insertion loss (IL) to the length of the active region. The light behavior and the effect of the taper are explored in detail using the beam propagation method (BPM). After optimization, the light can nearly be totally confined in the GeSi layer without any oscillation. The modulator with the designed taper can achieve low IL and high ER. 相似文献
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InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm 下载免费PDF全文
In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity (> 1 A/W), high saturation power (> 45 mA) in the static state and extremely low dark current density (0.04 pA/μm2) with 3 dB bandwidth at 13.4 GHz have been achieved. 相似文献
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Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature 下载免费PDF全文
Well-aligned and closely-packed silicon nanopillar (SNP) arrays are fabricated by using a simple method with magnetron sputtering of Si on a porous anodic alumina (PAA) template at room temperature. The SNPs are formed by selective growth on the top of the PAA pore walls. The growth mechanism analysis indicates that the structure of the SNPs can be modulated by the pore spacing of the PAA and the sputtering process and is independent of the wall width of the PAA. Moreover, nanocrystals are identified by using transmission electron microscopy in the as-deposited SNP samples, which are related to the heat isolation structure of the SNPs. The Raman focus depth profile reveals a high crystallization ratio on the surface. 相似文献
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在Si (001)衬底上, 以高质量的弛豫Ge薄膜作为缓冲层, 先后生长Sn组分x分别为2.5%, 5.2%和7.8%的完全应变的三层Ge1-xSnx合金薄膜. 在Si (001)衬底上直接生长了x分别为0.005, 0.016, 0.044, 0.070和0.155的五个弛豫Ge1-xSnx样品. 通过卢瑟福背散射谱、高分辨X射线衍射和X射线倒易空间图等方法测量了Ge1-xSnx合金的组分 与晶格常数. 实验得到的晶格常数相对Vegard定律具有较大的正偏离, 弯曲系数b=0.211 Å. 相似文献
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Optical matching layer structures in evanescent coupling photodiodes at a wavelength of 1.55μm: physics,design and simulation 下载免费PDF全文
We have studied the optical matching layers (OMLs) and external
quantum efficiency in the evanescent coupling photodiodes (ECPDs)
integrating a diluted waveguide as a fibre-to-waveguide coupler, by
using the semi-vectorial beam propagation method (BPM). The physical
basis of OML has been identified, thereby a general designing rule
of OML is developed in such a kind of photodiode. In addition, the
external quantum efficiency and the polarization sensitivity versus
the absorption and coupling length are analysed. With an optical
matching layer, the absorption medium with a length of 30μm
could absorb 90% of the incident light at 1.55μm
wavelength, thus the total absorption increases more than 7 times
over that of the photodiode without any optical matching layer. 相似文献
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High quality Ge was epitaxially grown on Si using ultrahigh
vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates
efficient germanium-on-silicon p-i-n photodetectors with 0.8~μm
Ge, with responsivities as high as 0.38 and 0.21~A/W at 1.31 and
1.55~μ m, respectively. The dark current density is
0.37~mA/cm2 and 29.4~mA/cm2 at 0~V and a reverse bias of
0.5~V. The detector with a diameter of 30~μ m, a
3~dB-bandwidth of 4.72~GHz at an incident wavelength of 1550~nm and
zero external bias has been measured. At a reverse bias of 3~V, the
bandwidth is 6.28~GHz. 相似文献
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Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature 下载免费PDF全文
Tensile-strained Ge/SiGe multiple quantum wells(MQWs) were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n+-Si(001) substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed. 相似文献