物理参数变化对短脉冲激光激励温度场的影响

 为研究多物理参数（耦合系数、电子热导率、电子热容、晶格热容）同时随温度变化对短脉冲激光辐照金属材料产生温度场分布的影响,基于双温耦合理论,建立了短脉冲激光辐照金属材料金的加热过程的有限元求解模型。在同时考虑脉冲激光的空间、时间分布和多参数同时随温度变化的情况下,得到短脉冲激光辐照金属材料金激励产生的温度场二维瞬态分布,并进一步比较了多物理参数同时随温度变化和采用室温物理参数两种情况下温度场分布的区别。数值结果表明：多物理参数同时随温度变化使电子温度和晶格温度的上升变快,最大值变大,而且使得材料中激光穿透直接辐照到的区域温度变高。     

Generation of UV laser light by stimulated Raman scattering in D2, D2/Ar and D2/He using a pulsed Nd:YAG laser at 355nm

A pulsed Nd:YAG laser at 355nm is used to pump Raman cell filled with D_2, D_2/Ar and D_2/He. With adequately adjusted parameters, the maximum photon conversion efficiency of the first-order Stokes light (S_1, 396.796nm) reaches 33.33% in D_2/Ar and the stability of S_1 in pure D_2 is fairly high, the energy drift being less than 10% when the pump energy drifts in the range of 5%. The conversion efficiency and stability, which are functions of the composition and pressure of the Raman medium and the energy of pump laser, are investigated. The result has been used to optimize the laser transmitter system for a differential absorption lidar system to measure NO_2 concentration profiles.     

DY-60氦气压缩机研制

详细描述了一种大功率、大排气量氦气压缩机的研制过程。给出了该压缩机的主要技术指标 ,阐述了系统流程和工程原理。并对冷却器、纯化器、滤油器等主要部件的设计、结构及组成进行了较为详细的描述。最后描述了控制系统作用、原理及组成的部件。     

等离子体填充盘荷波导高频特性分析

从麦克斯韦方程和流体理论出发，推导了填充磁化等离子体慢波结构的基本方程.在大磁场情况下，对等离子体填充盘荷波导的色散特性和耦合阻抗作了研究，结果表明填充等离子体使色散曲线上移，耦合阻抗提高.等离子体填充产生出模式谱非常丰富的周期性低频等离子体模式(TG模式).当等离子体密度增加到一定程度后，场模TM₀₁模的频率范围和TG₀₁模的频率范围相近，两个模式互相耦合产生出新的混合模G₁,G₂.如果相对论行波管工作在混合模上，将会产生新的工作机理. 关键词： 盘荷波导 等离子体填充 色散特性 相对论行波管     

MgB2交流响应teff的电流效应

本文并从磁通守恒方程出发,详细求导了Slab样品(厚度为d)交流磁化率的测量方程,并以MgB2为例,测量了在不同外场H和交流信号的频率γ交流磁化率,求得Ueff和J的关系实际上是满足Zeldov关系,实验结果和理论假设完全自洽.     

电子储存环中插入元件的非线性束流动力学的Lie代数方法

介绍了用能保证哈密顿系统“辛”性质的Lie映射方法来研究电子储存环中的插入元件对束流动力学的影响.并以此方法对合肥光源中将要安装的波荡器UD?–?1对储存环的影响作了初步的研究     

Evaluation of Influence of Multiple Scattering Effect in Light-Scattering-Based Applications

The extinction cross sections of a system containing two particles are calculated by the T-matrix method, and the results are compared with those of two single particles with single-scattering approximation. The necessity of the correction of the refractive indices of water and polystyrene for different incident wavelengths is particularly addressed in the calculation. By this means, the volume fractions allowed for certain accuracy requirements of single-scattering approximation in the light scattering experiment can be evaluated. The volume fractions calculated with corrected refractive indices are compared with those obtained with fixed refractive indices which have been rather commonly used, showing that fixed refractive indices may cause significant error in evaluating multiple scattering effect. The results also give a simple criterion for selecting the incident wavelength and particle size to avoid the ＇blind zone＇ in the turbidity measurement, where the turbidity change is insensitive to aggregation of two particles.     

Adaptive projective synchronization of unified chaotic systems and its application to secure communication

In this paper, a simple adaptive linear feedback control method is proposed for controlling the scaling factor between two coupled unified chaotic systems to a desired value, based on the invarianee principle of differential equations. Under this control strategy, one can arbitrarily select the scaling factor. Numerical simulations are given to support the effectiveness of the proposed method and show the robustness against noise. Furthermore, a secure communication scheme based on the adaptive projective synchronization of unified chaotic systems is presented and numerical simulation shows its feasibility.[第一段]     

CO在尖晶石结构CuCr2O4(111)表面上的吸附理论研究

采用密度泛函理论，研究了CO在具有尖晶石结构的过渡金属氧化物CuCr2O4(100)表面上的吸附. 几何构型优化结果表明，CO倾向于以碳端吸附在Cu原子上，吸附能达到133.2 kJ/mol. 吸附在五配位的Cr原子上也比较稳定，吸附能为57.5 kJ/mol. 吸附后，C-O键伸长，振动频率出现红移，表明分子被活化. 同时分析了吸附前后态密度的变化，探讨了CO与底物的成键机理.     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.