HLS储存环高频调制实验

在合肥光源(HLS)储存环上进行了高频调制实验, 结果表明采用调制频率接近同步振荡频率f_s的高频幅度或相位调制, 可以提高束流寿命. 而通常采用的是2f_s的调制方式. 实验测量了最佳调制频率和合适的调制度, 以及不同流强下调制引起寿命增长的程度. 同时观察到束流频谱中高次分量的降低, 这有利于抑制多束团耦合不稳定性.     

Moving bright solitons in a pseudo-spin polarization Bose-Einstein condensate

We study the moving bright solitons in the weak attractive Bose–Einstein condensate with a spin–orbit interaction. By solving the coupled nonlinear Schr ?dinger equation with the variational method and the imaginary time evolution method,two kinds of solitons(plane wave soliton and stripe solitons) are found in different parameter regions. It is shown that the soliton speed dominates its structure. The detuning between the Raman beam and energy states of the atoms decides the spin polarization strength of the system. The soliton dynamics is also studied for various moving speed and we find that the shape of individual components can be kept when the speed of soliton is low.     

多晶薄膜表面粗化与生长方式转变

采用原子力显微镜研究了磁控溅射多晶薄膜表面粗化行为对归一化沉积温度T_s/T_m(T_s是沉积温度，T_m是材料熔点)的依赖性与薄膜生长方式转变行为.随着T_s/T_m增加，薄膜表面粗糙度增加，而表征粗糙度随时间演化特征的生长指数β历经了先减小再增加的过程.β对T_s/T_m的依赖关系反映了薄膜生长方式的转变行为，即薄膜生长依次由随机生长方式向表面扩散驱动生长方式与异常标度行为生长方式转变.在低于体扩散控制薄膜生长的温度时，晶界扩散机理导致多晶薄膜的表面粗化的异常标度行为. 关键词： 多晶薄膜 表面粗化 温度 生长     

Symmetry and asymmetry rogue waves in two-component coupled nonlinear Schrdinger equations

By means of the modified Darboux transformation we obtain some types of rogue waves in two-coupled nonlinear Schr ¨odinger equations.Our results show that the two components admits the symmetry and asymmetry rogue wave solutions,which arises from the joint action of self-phase,cross-phase modulation,and coherent coupling term.We also obtain the analytical transformation from the initial seed solution to unique rogue waves with the bountiful pair structure.In a special case,the asymmetry rogue wave can own the spatial and temporal symmetry gradually,which is controlled by one parameter.It is worth pointing out that the rogue wave of two components can share the temporal inversion symmetry.     

Investigations of the dielectronic recombination of phosphorus-like tin at CSRm

The electron–ion recombination for phosphorus-like~(112) Sn~(35+)has been measured at the main cooler storage ring of the Heavy Ion Research Facility in Lanzhou, China, employing an electron–ion merged-beams technique. The absolute total recombination rate coefficients for electron–ion collision energies from 0 e V–14 e V are presented. Theoretical calculations of recombination rate coefficients were performed using the Flexible Atomic Code to compare with the experimental results. The contributions of dielectronic recombination and trielectronic recombination on the experimental rate coefficients have been identified with the help of the theoretical calculation. The present results show that the trielectronic recombination has a substantial contribution to the measured electron–ion recombination spectrum of~(112)Sn~(35+). Although a reasonable agreement is found between the experimental and theoretical results the precise calculation of the electron–ion recombination rate coefficients for M-shell ions is still challengeable for the current theory.     

2018年10期 电子期刊

采用自蔓延燃烧法结合高温热处理方法制备了镝离子掺杂浓度不同的七铝酸十二钙（12CaO·7Al₂O₃:x% Dy³⁺,C12A7:x% Dy³⁺） X射线荧光粉材料。实验发现,该系列荧光粉在350 nm激发下,可观察到位于486 nm和575 nm的两个发光峰,其分别来源于Dy³⁺离子的⁴F_9/2→⁶H_15/2和⁴F_9/2→⁶H_13/2跃迁。当镝掺杂摩尔分数为0.3%时,两个发光峰的发射强度最大。在氮气气氛下,1 300℃热处理C12A7:x% Dy³⁺荧光粉后,与未热处理样品相比,笼中OH^-基团减少,导致其光激励发光强度显著增大,并产生了更多的深陷阱。通过使用氮气气氛热处理后的C12A7:0.3% Dy³⁺粉末制成的成像板,以包覆有绝缘层细电线为成像目标,发现在合适的X射线吸收剂量下（0.54 Gy）,可以实现高质量的X射线成像。以上实验结果表明,镝掺杂的七铝酸十二钙X射线荧光粉材料在数字化静态X射线图像目标检测技术中有潜在的应用前景。     

用全内反射瞬逝场照明磁镊研究Bloom解旋G-四联体

G-四联体(G-quadruplex,G4)是广泛存在于细胞基因组中的一种DNA结构,在DNA的代谢如复制、转录、同源重组等过程中起重要作用.G4解旋酶近年来受到广泛研究,其中Bloom(BLM)解旋酶的研究已经相当丰富,但仍有一些基本问题不清楚.我们应用全内反射瞬逝场照明磁镊对BLM解旋G4的动力学过程进行了深入研究,观察到了BLM解旋G4的分步过程.相对于单分子荧光共振能量转移技术而言,借助磁镊的长时间观测性能,我们在近饱和三磷酸腺苷(ATP)浓度的实验体系中观察到BLM长时间反复解开G4或者长时间维持G4于打开状态的两种作用方式.最后,使用相同的实验条件做了单分子荧光共振能量转移实验,确定了加载2-3 pN的外力对BLM解旋G4没有显著影响.     

基于非球面镜的圆环形光束非线性整形方法

提出了一种利用非球面镜对圆环形光束进行非线性整形的方法,该方法利用两个高次非球面镜片小角度放置组成光束变换光路,能够在几乎不损失功率的情况下灵活调整环形光束的遮拦比和强度分布,也能够实现空心光束和实心光束的相互转换,且镜片加工难度低。实验结果表明,利用该方法搭建的光路与理论分析结果吻合较好,能够较好地对光束进行非线性整形。     

熔石英亚表面缺陷附近光强分布的数值模拟

 熔石英亚表面缺陷对光场的调制是导致激光辐照场破坏的主要因素。采用有限元方法对熔石英亚表面缺陷（平面和锥形划痕）周围的光强分布进行了数值模拟。结果表明：划痕形状、几何尺寸、方位角、光的入射角等是影响划痕周围光强分布的主要因素;前表面划痕对光强的增强效果比后表面弱;在理想形状的划痕截面和表面同时发生内全反射时,平面划痕周围的光强增强效果明显。锥形划痕周围的光强分布为正确解释交叉划痕的夹角平分线附近的损伤提供了理论依据。     

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiNx/nc-Si/a-SiNx Structures

The a-SiNx/nanocrystalline silicon （nc-Si）/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition （PECVD） system on p-type Si substrates. The nc-Si layer in thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layers are 3nm and 20nm, respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures. Distinct frequency-dependent capacitance peaks due to electrons tunnelling into the nc-Si dots and capacitance-voltage （C - V） hysteresis characteristic due to electrons storage in the nc-Si dots are observed with the same sample. Moreover, conductance peaks have also been observed at the same voltage region by conductance-voltage （G - V） measurements. The experimental results demonstrate that electrons can be loaded onto nc-Si dots via resonant tunnelling and can be stored in our a-SiNx/nc-Si/a-SiNx structures.