大失谐连续输运激光情形下双磁光阱中冷原子的输运

在我们建立的铯原子双磁光阱实验装置上,采用连续激光将气室磁光阱中冷却并俘获的冷原子输运到超高真空磁光阱.在前期利用近共振弱光研究原子输运的工作基础上,我们将输运激光的负失谐量扩展到约2.0 GHz,并增大了输运光功率,对冷原子的输运作了实验研究.结果表明:在大负失谐情形下,较强的输运光使冷原子输运更为有效,归因于输运光束对原子的偶极力造成对冷原子的导引作用.     

超强激光超热电子激发的Kα X射线发射研究

建立了无色散型X射线谱仪. 利用SILEX-I激光装置的超强激光辐照固体物质，分别在靶前、后定量测量了Cu和Mo物质在不同激光功率密度时的X射线谱和Kα光子产额，推导了不同激光强度时的Kα X射线光子转换效率. 实验发现，打靶激光能量越高，靶后出射的Kα产额越高，100μm Mo靶可获得10^-5量级转换效率.     

丰质子核反应中轻带电粒子发射的同位旋效应

采用同位旋相关的Boltzmann—Langevin方程计算了核素^12-15N和^17-20Ne反应中轻带电粒子发射的同位旋效应。^12-15N与^28Si靶的反应结果显示轻带电粒子的产生截面有明显的同位旋效应,^12N的轻带电粒子产生截面突然增大,与实验得出的结论相同,由此检验了所采用的计算方法的可行性。同时还计算了^17-20Ne与^9Be靶的反应,发现^17Ne的轻带电粒子产生截面也是突然增大,并且其质子分布有较大的弥散,据此认为^17Ne可能具有晕结构。 Within the Boltzmann-Langevin equation, the isospin effects on the production cross sections of light charged particles （LCP） in the reaction of proton rich nuclei were studied. We have calculated the LCP productio n cross sections of the reaction ^12-15N ＋ ^28Si at 55 MeV/u and ^17-20Ne ＋ ^9Be at 60 MeV/u. The LCP production cross sections of ^12N increase abnormally in comparison with those of ^13-15N. The result accorded with experimental one. It also happened to ^17-20Ne. It suggests that ^17Ne is probably a proton halo nucleus.     

富勒烯C20分子器件的电子结构和传导特性

运用基于密度泛函理论和基于非平衡格林函数的第一性原理方法研究了富勒烯C20分子及连接电极构成的C20分子器件的电子结构及电子输运性质.构建了三个基于C20分子的嵌入K和Si原子的电子输运系统,并得到了电子透射谱和分子轨道分布.分析了三种器件的电子结构和输运性质的产生原因,说明C20分子器件的电子传导主要集中在外壳.在C20分子空笼中嵌入K和Si原子后,其电子输运仍然主要集中于富勒烯C20的外壳.     

中国散裂中子源直线射频低电平远程控制软件研制

中国散裂中子源一期工程的直线加速器,共有8套数字化射频低电平控制单元,射频低电平的本地控制属于EPICS的异构系统,无法直接与EPICS客户端进行通信。通过在射频低电平本地控制上位机程序中嵌入一个C#类型的EPICS服务器程序,实现了使用EPICS客户端对射频低电平系统的远程控制, 从而把射频低电平控制系统接入基于EPICS框架的控制系统中。直线射频低电平远程控制投入在线运行以来,运行稳定可靠。     

运动纠缠双原子与薛定谔猫态光场相互作用系统的场熵演化

利用全量子理论,研究了运动纠缠双原子与薛定谔猫态光场相互作用系统的场熵演化特性,讨论了光场强弱、相干态间的相位角、原子的运动和场模结构参数对系统场熵的影响.结果表明：原子运动导致场熵演化具有周期性;当场强较弱时,奇相干态光场与运动原子的纠缠度最大,而偶相干态光场与运动原子的纠缠度最小, Yurke-Stoler相干态光场与运动原子的纠缠度值介于中间;当场强足够大时,分别处于Yurke-Stoler相干态,奇相干态和偶相干态的光场与运动原子的纠缠度相等,场熵演化特性相同;随着原子运动速度的增大或场模结构参数的增大,场熵的演化周期缩短,并且场与原子的纠缠度逐渐减弱.     

弹性矩形板方程在非线性边界条件下整体解的存在唯一性

考虑了在非线性边界条件下的弹性矩形板方程.利用Galerkin方法,首先证明了该方程在非线性边界(a)及初值w⁰∈W,w¹∈W的条件下初边值问题存在唯一整体弱解w(t).其次证明了该方程在非线性边界(b)及初值w⁰∈W₁,w¹∈W₁的条件 关键词： 弹性矩形板方程 非线性边界条件 初边值问题 整体解     

Chemical composition and magnetism of Ag doped LaMnO3

By using a sol-gel clue, a set of polycrystalline perovskite samples La$_{1 - x}$Ag$_{x}$MnO$_{3}$ with a nominal doping level $x$ ranging from 0.05 to 0.45 has been synthesized. The chemical composition and the magnetism of the samples were investigated. A little Ag was found seeping from the samples in the sintering process when the doping level exceeded 0.05 and the sintering temperature was higher than 700\du\, resulting in the samples being in multiphase. The magnetic transition points of the samples have been found to decrease with increasing sintering temperature. A concentration-dependent $T_{\rm c}$ similar to that of bivalent metal ion doped perovskite, has been obtained. We believe that the Ag seeping in the sintering process is responsible for those magnetic characteristics.     

（Na0.52K0.44Li0.04）Nb0.9-xSbxTa0.1O3 Lead-Free Piezoelectric Ceramics with High Performance and High Curie Temperature

（Na0.52K0.44Li0.04）Nb0.9-x Sbx Ta0.1O3 lead-free piezoelectric ceramics are prepared by a solid-state reaction method. With increasing Sb content, the transition temperature from orthorhombic to tetragonal polymorphic phase decreased. A composition （Na0.52K0.44Li0.04）Nb0.863Sb0.037Ta0.1O3 is found to possess excellent piezo- electric and electromechanical performances （d33 = 306pC/N, kp =48%, and kt=50%）, and high Curie temperature （Tc = 320 ℃）. These results indicate that （Na0.52K0.44Li0.04）Nb0.863Sb0.037 Ta0.1O3 is a promising lead-free piezoceramics replacement for lead zirconate titanate.     

Sinusoidal Steady State Analysis on 4H--SiC Buried Channel MOSFETs

With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- ductor field effect transistors （BCMOSFETs）. Output short-circuit current gain G and Mason＇s invariant U are cMculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT = 800 MHz and fmax= 5 GHz are extracted for the 4H-SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGs = 4.5 V. Simulation results clearly show that the characteristic frequency of 4H-SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.