Synthesis of N-type semiconductor diamonds with sulfur,boron co-doping in FeNiMnCo-C system at high pressure and high temperature

A series of diamonds with boron and sulfur co-doping were synthesized in the Fe Ni Mn Co-C system by temperature gradient growth(TGG) under high pressure and high temperature(HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra(XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 ?·cm and 760.870 cm~2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×10~5 ?·cm and 76.300 cm~2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B–S doping were acquired.     

基于PSpice的半导体激光高频调制系统设计

为了实现高频率的调制激光输出,设计了一种驱动系统由信号放大、电流调制、过流保护和具有慢启动功能的直流偏置电路高度集成的半导体激光高频调制系统。此系统采用了结构简单的直接调制方式,运用线性调频的高频信号去控制半导体激光器发射激光的强度,从而实现高频调制。在运用OrCAD/PSpice对高频调制驱动系统进行模拟仿真的基础上,最终研制出的半导体激光高频调制系统实现了频率为40.02 MHz、直流偏置为493.326 mA、正弦波调制电流峰峰值为850 mA的高频调制输出,调制激光平均功率为300 mW。     

基于光谱合束技术的透射光栅模拟设计

半导体激光器光谱合束技术能够实现近衍射极限的高功率激光输出,已成为当前研究热点。衍射光栅的性能直接决定光谱合束的激光输出效果。模拟设计了一种针对940 nm波长、熔融石英材料的亚波长透射光栅。基于严格耦合波理论对光栅结构进行初步设计,运用Rsoft软件依次对光栅占空比、脊高和周期等参数进行优化确定,同时分析了各个参数对光栅衍射效率的影响。所设计的透射式光栅实现第-1级衍射级次的波分复用功能,衍射效率达到91.2%(TE模式),同时压缩其他衍射级次,使其衍射效率降到1.2%以下。同时在光栅入射角度59°±3°范围内保持90%以上的衍射效率,实现高功率激光输出的同时具有较高的误差容错率,易于调节,满足光谱合束技术的要求。     

Structural transitions of SWNT filled with C_(60) under high pressure

Raman spectra of C_(60) filled single-walled carbon nanotubes(C_(60)@SWNTs) with diameters of 1.3–1.5 nm have been studied under high pressure. A plateau in the pressure dependence of the G-band frequency at around 10 GPa was observed in both experiments with 514 nm and 830 nm excitation lasers, which is similar to the high pressure behaviors of pristine SWNTs. This structural transition has been assigned to the transformation into a peanut-like structure of the nanotubes. At pressure below 2 GPa, no obvious Raman signature related to the structural transition of nanotubes was observed, unlike what has been reported for C_(70) filled nanotubes. We discussed this point in terms of the arrangement differences of C_(60) and C_(70)molecules inside the nanotubes. At higher pressure up to 15 GPa, a graphite-like pressure evolution was observed in our C_(60)@SWNTs.     

Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy(XPS) spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×10~5 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.     

夫兰克-赫兹实验的改进

对传统的测量氩原子第一激发电位的方法进行了改进,利用示波器光标"cursor"功能,在示波器上直接读出波峰或波谷的电位.该方法减小了读数时的误差,提高了测量精度,并且锻炼了学生对示波器的使用,收到较好的教学效果.     

Measuring Loschmidt echo via Floquet engineering in superconducting circuits

The Loschmidt echo is a useful diagnostic for the perfection of quantum time-reversal process and the sensitivity of quantum evolution to small perturbations. The main challenge for measuring the Loschmidt echo is the time reversal of a quantum evolution. In this work, we demonstrate the measurement of the Loschmidt echo in a superconducting 10-qubit system using Floquet engineering and discuss the imperfection of an initial Bell-state recovery arising from the next-nearest-neighbor (NNN) coupling present in the qubit device. Our results show that the Loschmidt echo is very sensitive to small perturbations during quantum-state evolution, in contrast to the quantities like qubit population that is often considered in the time-reversal experiment. These properties may be employed for the investigation of multiqubit system concerning many-body decoherence and entanglement, etc., especially when devices with reduced or vanishing NNN coupling are used.     

仿射辛群作用下的面轨道生成的格

设ASU(2v,F_q)是F_q上的2v维仿射辛空间,ASp_(2v)(F_q)是F_q上的2v次仿射辛群,设M(m,s)是ASp_(2v)(F_q)作用下的(m,s)面的轨道,用L(m,s)表示M(m,s)中面的交生成的集合.讨论了各轨道生成的集合之间的包含关系,一个面是由给定M(m,s)生成的集合中的一个元素的条件,以及L(m,s)何时做成几何格.     

用可分命题简化证明实数系中定理

修改了连续归纳法,利用修改后的连续归纳法证明了一个关于可分命题的重要定理,利用该定理简化证明实数系中若干定理.     

CdS-ZnSe和CdSe-ZnS量子点的合成和F(o)rster能量转移研究

采用分步合成法成功合成了CdS-ZnSe(Ⅰ型)和CdSe-ZnS(Ⅱ型)核-壳结构量子点.并首次构建了CdS-ZnSe/CdSe-ZnS结构F(o)rster能量转移对.利用吸收光谱(UV-Vis),光致发光谱(PL),时间分辨光致发光谱(TRPL),透射电子显微镜(TEM)对比研究了不同配比的CdS-ZnSe/CdSe-ZnS结构Fö rster能量转移.分析结果表明:在能量转移发生时,CdS-ZnSe荧光强度显著下降,荧光寿命明显缩短,F(o)rster能量转移确实存在于CdS-ZnSe/CdSe-ZnS量子点之间.