纳米ZnO生长及性质分析

利用低压金属有机化学气相沉积(LP-MOCVD)技术,在表面含有ZnO颗粒作为催化剂的Si(111)衬底上制备了ZnO纳米柱阵列。采用X射线衍射(XRD)、喇曼光谱(Raman)、扫描电子显微镜(SEM)、光致发光(PL)谱分析了样品的晶体结构质量、表面性质和光学性质。结果表明,生长出来的纳米ZnO具有较好的c轴择优取向性。发现氧分压对ZnO纳米柱的生长有重要影响:当氧分压较低时,生长基于VLS机制;当氧分压较高时,生长基于VS机制;通过对N2O流量的控制可实现对ZnO纳米材料的可控生长。     

In situ Investigation on Layer-by-Layer Deposition of Polyelectrolytes by Quartz Crystal Microbalance

利用带有耗散测量功能的石英晶体微天平(QCM-D),研究了聚苯乙烯磺酸钠(PSSS)和聚乙烯基苄基三甲基氯化铵(PVTC)的层叠层组装. QCM-D中频率和耗散两个参数的变化表明加入NaCl导致PSSS/PVTC多层膜的厚度增加. 在NaCl浓度较低时,组装由表面电荷反转水平决定;而在NaCl浓度较高时,则由相邻层间聚电解质链的渗透程度决定.     

Au/Pt/InGaN/GaN Heterostructure Schottky Prototype Solar Cell

A patterned Au/Pt/In0.2Ga0.8N/GaN heterostructure Sehottky prototype solar cell is fabricated. The forward current-voltage characteristics indicate that thermionie emission is a dominant current transport mechanism at the Pt/InGaN interface in our fabricated cell. The Sehottky solar cell has an open-circuit voltage of 0.91 V, short-circuit current density of 7mA/cm^2, and fill factor of 0.45 when illuminated by a Xe lamp with a power density of 300 mW/cm^2. It exhibits a higher short-circuit current density of 30 mA/cm^2 and an external quantum efficiency of over 25% when illuminated by a 20-roW-power He-Cd laser.     

降压类中成药及保健食品中21种非法添加化学药物的快速检测与确证方法研究

采用亚3μm色谱柱建立了降压类中成药及保健食品中21种非法添加化学药物的高效液相色谱快速检测及液相色谱-质谱联用确证方法。样品经甲醇-乙腈(体积比5∶5)超声提取,采用Agilent Poroshell 120Phenyl-Hexyl(100 mm×4.6 mm,2.7μm)色谱柱,以甲醇-乙腈(体积比2∶1)-甲酸水溶液(p H 2.5±0.1)为流动相,梯度洗脱,二极管阵列检测器检测,外标法定量,液质联用法进一步定性确证。结果表明,21种成分在17 min内完成分离,方法检出限为0.03~0.50 mg/g,定量下限为0.09~1.50 mg/g,平均回收率为82.0%~109.0%。采用上述方法对107批从互联网收集的样品进行检测,阳性检出率为42.1%。该方法快速、准确,适用于降压类中成药及保健食品中非法添加药物的快速检测。     

Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.     

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition （MOCVD）. Microstructural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1 （LO） of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors.     

求解隐式迭代方程的多尺度配置法

用多尺度快速配置法求解病态积分方程的隐式迭代方程.在积分算子是扇形紧算子时,该方法得到了离散隐式迭代方程的近似解.采用Morozov偏差原理作为停止准则,并证明了在该准则下隐式迭代正则化方法所得近似解的收敛率.最后,用数值实验证实理论结果和说明数值方法的有效性.     

硝基烷基膦酸酯碳负离子烷基化反应区域选择性研究

α-或β-硝基烷基膦酸酯双负离子与卤代烷反应, 生成碳-烷基化产物, 反应区域选择性取决于硝基膦酸酯的结构, 讨论了可能的反应机理。     

Synthesis and Crystal Structure of a New Diamine Complex CuC14（H2tn）

In an attempt to synthesize a new pyrimidine complex of copper(H) in a solution reaction of CuBr2 with 2,2‘-bis(hexahydropydmidine) and hydro-chloric acid, we unexpectedly obtained a bright yellow chip-like crystal of CuCl4(H2tn) [H2tn=(H3NCH2CH2CH2NH3)^2 ]. Its structure was determined by single-crystal X-ray diffraction analysis. The crystal belongs to orthorhombic system, space group Pnma, with cell parameters: a=0.7216(2)nm, b=1.8308(6)nm, c=0.7553(3)nm, V=0.9953(6)nm^3, Z=4, F(000)=564, Mr=281.49, Dc=1.879 g/cm^3. u(Mo Ka)=3.204 mm^-1, R1=0.0248, wR2=0.0575. The analysis of the crystal structure indicates that the complex has a three-dimensional network structure, which is formed by hydrogen bonds and electrostatic interaction.