p73变异体研究现状及其在肿瘤放疗中的应用前景

p73基因是p53抑癌基因家族的新成员。 p73有两组蛋白异构体: TAp73和DNp73。 TAp73具有诱导细胞周期停滞和细胞凋亡的能力, 而DNp73却有与之相反的能力, 具有肿瘤促进作用。 对p73基因两面性的特点及研究进展作一综述。 最后结合重离子治疗肿瘤, 探讨了p73联合重离子治疗的新思路。 p73 was the first identified homologue of the tumor suppressor gene, p53. p73 has two groups of protein isoforms: TAp73 and DNp73. TAp73 can induce cell cycle arrest, resulting in the ability of apoptosis, however DNp73 has antagonistic property of a tumor promoting effect. In this paper, the dual roles of p73 gene and its research progress was reviewed. Finally, combined with heavy ion treatment of tumor, we explored some new ideas of p73 heavy ion joint therapy.     

Fractional backward Kolmogorov equations

This paper derives the fractional backward Kolmogorov equations in fractal space-time based on the construction of a model for dynamic trajectories. It shows that for the type of fractional backward Kolmogorov equation in the fractal time whose coefficient functions are independent of time, its solution is equal to the transfer probability density function of the subordinated process X(Sα(t)), the subordinator Sα(t) is termed as the inverse-time α-stable subordinator and the process X(τ) satisfies the corresponding time homogeneous Ito stochastic differential equation.     

Reaction Subdiffusion with Random Waiting Time Depending on the Preceding Jump Length

To describe the energy-dependent characteristics of the reaction-subdiffusion process, we analyze the simple reaction A→B under subdiffsion with waiting time depending on the preceding jump length, and derive the corresponding master equations in the Fourier–Laplace space for the distribution of A and B particles in a continuous time random walk scheme. Moreover, the generalizations of the reaction-diffusion equation for the Gaussian jump length with the probability density function of waiting time being quadratically dependent on the preceding jump length are obtained by applying the derived master equations.     

First principles study of ceramic materials (IVB group carbides) under ultrafast laser irradiation

Group IVB carbides have been applied in extreme aerospace environments as hard ceramic coatings; ZrC is being considered as a replacement for SiC in nuclear reactors. Therefore, a thorough understanding of the laser irradiation response of group IVB carbides is of clear significance. However, the existing knowledge on the fundamental properties of IVB group carbides is limited and insufficient with regard to both irradiated and non-irradiated characteristics. We investigate the effect of ultrafast laser irradiation on the lattice stability of ceramic materials(IVB group carbides) using the density functional perturbation theory(DFPT). The calculated phonon frequencies of TiC and ZrC at the ground state are in good agreement with previous calculations and experimental values. The phonon frequencies of IVB group carbides are positive, even though the electronic temperature reached 5 eV. Thus, IVB group carbides are more stable under ultrafast laser irradiation, which has greater benefits in nuclear and aeronautical applications compared to metals(W,Na), semimetals(Bi),and semiconductors(Si,SiC). The thermodynamic properties of ZrC are calculated as functions of their lattice temperature at different electronic temperatures. The elastic shear constants of IVB group carbides satisfy the Born stability criteria at Te = 5 eV. In addition, a comparison of the predicted melting temperatures of IVB group carbides, reveal that HfC is better suited for extreme high-temperature environments.     

大尺寸HVPE反应器寄生沉积的数值模拟研究

在氢化物气相外延(HVPE)生长GaN厚膜中,反应腔壁面总会产生大量的寄生沉积,严重影响薄膜生长速率及质量.本文针对自制的大尺寸垂直式HVPE反应器,通过数值模拟与实验对比,研究了反应腔壁面沉积以及GaN生长速率的分布规律,特别是寄生沉积分布与载气流量的关系.研究发现:在基准条件下,顶壁寄生沉积速率由中心向边缘逐渐降低,与实验结果吻合;侧壁沉积出现8个高寄生沉积区域,对应喷头边缘处排布的GaCl管,说明沉积主要取决于GaCl的浓度输运;模拟得出的石墨托表面生长速率低于实验速率,但趋势一致.保持其他条件不变,增大NH3管载气N2流量,顶壁和侧壁的寄生沉积速率及分布区域均随之增大,石墨托表面生长速率随之减小而均匀性却随之提高;增大GaCl管载气N2流量,顶壁和侧壁的寄生沉积速率及分布区域均随之减小,石墨托表面生长速率随之增大而均匀性却随之降低.研究结果为大尺寸HVPE反应器生长GaN的工艺优化提供了理论依据.     

MOVPE生长GaN薄膜的表面吸附和扩散研究

利用量子化学计算方法,对MOVPE生长GaN薄膜的表面反应进行研究.特别针对反应前体GaCH3(简称MMG)在理想、H覆盖和NH2覆盖GaN(0001)面的吸附和扩散进行计算分析.通过建立3×3 超晶胞模型,优化计算了MMG在三种不同覆盖表面的稳定吸附位、吸附能和电子布居,搜寻了MMG在稳定吸附位之间的扩散能垒.计算结果表明:对于三种表面,MMG的稳定吸附位均为T4位和H3位,H3位比T4位略微稳定.MMG在NH2覆盖表面吸附能最大,在H覆盖表面吸附能最小,在理想表面吸附能居中.MMG中的Ga与不同的表面原子形成的化学键的键强的大小顺序为:Ga-N>Ga-Ga>Ga-H.相比于理想表面和H覆盖表面,MMG在NH2覆盖表面的扩散能垒最大,因此表面过量的NH2会抑制MMG的扩散.     

Anomalous transport in fluid field with random waiting time depending on the preceding jump length

Anomalous (or non-Fickian) transport behaviors of particles have been widely observed in complex porous media. To capture the energy-dependent characteristics of non-Fickian transport of a particle in flow fields, in the present paper a generalized continuous time random walk model whose waiting time probability distribution depends on the preceding jump length is introduced, and the corresponding master equation in Fourier-Laplace space for the distribution of particles is derived. As examples, two generalized advection-dispersion equations for Gaussian distribution and lévy flight with the probability density function of waiting time being quadratic dependent on the preceding jump length are obtained by applying the derived master equation.     

Temperature dependence of surface and structure properties of ZnCdO film

Zn1-xCdx O films are grown on c-sapphire substrates by laser molecular beam epitaxy(LMBE) at different temperatures. Their crystallographic structures, compositions, surface electronic structures are investigated. The a-axis lattice constant of Zn0.95Cd0.05 O is 3.20. Moreover, the epitaxial relationship shows a 30°-in-plane rotation of the film with respect to the c-sapphire substrate. When the substrate temperatures arrives at 500℃, the in situ reflection high-energy electron diffraction(RHEED) pattern of Zn Cd O film shows sharp streaky pattern. The maximum Cd content of Zn Cd O film grown at low substrate temperatures increases up to about 29.6 at.%, which is close to that of the ceramic target. In situ ultraviolet photoelectron spectroscopy(UPS) measurements demonstrate that Zn Cd O film exhibits intense peaks at 4.7 e V and 10.7 e V below the Fermi level, which are assigned to the O 2p and Zn 3p states. Energetic distance between Zn 3d and Cd 4d is 0.60 e V. Above 470 nm, the thin film shows excellent optical transmission.     

顶空固相微萃取-气相色谱-质谱法测定地表水中硝基氯苯

硝基氯苯在染料、制药和农药等工业中的大量使用可能污染到地表水。硝基氯苯作为全国重点城市饮用水源地水每月必测项目之一,分析标准需用到有机萃取溶剂乙酸乙酯和苯,这些有机萃取试剂的使用对分析人员的健康和环境都是有害的,同时方法相对繁琐。而固相微萃取、固相萃取、顶空和吹扫捕集等相对环保的前处理方法适合水和废水中硝基氯苯的测定。固相微萃取中,顶空萃取方式和浸入式相比,具有不用考虑样品     

顶空固相微萃取-气相色谱-质谱法同时测定饮用水源水中24种VOCs

建立了同时测定饮用水源水中24种挥发性有机物(VOCs)的顶空固相微萃取-气相色谱-质谱法.用75 μm CarboxenTM-Polydimethylsiloxane(CAR-PDMS)固相微萃取柱顶空萃取水样中的VOCs,VOCs用气相色谱-质谱联用仪检测,采用内标法定量.对萃取柱涂层、样品盐度、萃取温度和萃取时间等样品前处理条件进行了优化,VOCs的检出限在0.03～0.31 μg/L之间,线性相关系数r＞0.996(二氯甲烷和三氯甲烷除外).对饮用水源水实际水样0.50μg/L和1.00 μg/L两个加标浓度水平的回收率进行了测定,三氯甲烷回收率均值分别为104％和142％,其余VOCs回收率分别为90.0％～120％和88.0％～110％,除二氯甲烷和三氯甲烷外,其余VOCs测定结果的相对标准偏差均小于15.0％(n=6).该方法适用于饮用水源水中挥发性有机物的监测分析.