Characterization of ion-implanted 4H-SiC Schottky barrier diodes

Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I--V and C--V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I--V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal--semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I--V and C--V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance R_\rm s are 11.9 and 1.0~kΩ respectively. The values of barrier height φ _\rm B of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I--V method and 1.14 and 0.93 eV obtained by the C--V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2\% and 4\% respectively extracted from C--V testing results.     

SiC晶体缺陷的阴极荧光无损表征研究

由于在研究SiC晶体缺陷对器件性能的影响的过程中,表征材料缺陷的常用的方法是破坏性的,因此寻找一种无损的测试方法对缺陷进行有效的表征显得尤为重要。基于阴极荧光(CL)的工作原理对4H-SiC同质外延材料的晶体缺陷进行了无损测试研究。结果发现利用阴极荧光可以观测到晶体内部的堆垛层错、刃位错和螺位错以及基面位错,其阴极荧光图中的形貌分别为直角三角形、点状和短棒状。因此该方法成为SiC晶体缺陷的无损表征时的一种有效的测试方法。如果利用该方法对材料的衬底和外延层缺陷分别进行观测就能建立起衬底和外延层缺陷之间的某种联系,另外对器件工作前后的缺陷进行表征,建立器件工作前后缺陷之间的联系,就可以进一步地研究材料缺陷对器件性能影响的问题。     

SiC表面C 1s谱最优拟合参数的研究

提出了一种新的,用未限定拟合峰位置、半高宽和峰面积的X射线光电子谱拟合方法,研究了拟合峰的数目、函数类型及背景对SiC表面C 1s谱拟合结果的影响,并与样品表面宽扫描X射线光电子谱和红外掠反射吸收谱相对照,确定了SiC表面C 1s谱的最优拟合参数,获得了与文献中数值相同的 C 1s束缚能. 为SiC及其他材料表面元素窄扫描X射线光电子谱的拟合和化学态结构的鉴定奠定了基础. 关键词： SiC X射线光电子谱 C 1s谱     

6H-SiC电子输运的Monte Carlo模拟

从实际测量和单粒子Monte Carlo模拟两个方面研究了6H-SiC的电子输运规律,在模拟中考 虑了6H-SiC主要的散射机理,模拟的结果体现了6H-SiC具有良好的高温和高场特性以及迁移 率的各向异性,其横向迁移率和纵向迁移率相差近5倍.模拟结果和实验数据的对比说明了对 6H-SiC输运特性的模拟是正确的. 关键词： 6H-SiC Monte Carlo模拟 迁移率 散射机理     

三角冷却通道尖角区的换热研究

三角冷却通道可以作成不同角度尖角区深入高温部件的突出部份进行有效冷却,因此在工程上应用很广.尖角区换热系数远较圆管为低,如果误用圆管传热公式来计算尖角区壁温,就会导致该区冷却不足和温度过高,引起部件寿命降低甚至很快损坏。因此获得不同角度尖角区的换热公式具有重要意义。     

苯基稀土氯化物的合成及其表征

1970年,Hart等首先合成了Sc(C_6H_5)_3、Y(C_6H_5)_3、LiLa(C_6H_5)_4和LiPr(C_6H_5)_4。1972年,Cotton等测定了[Lu(2,6-(CH_3)_2C_6H_3)_4]·[Li·4THF]的晶体结构。1986年,陈文启等人合成了Nd(C_6H_5)_3,Gd(C_6H_5)_3和LiNd(C_6H_5)_4。本文首次合成了苯基稀土氯化物C_6H_5LnCl_2·nTHF(Ln=Pr,Sm,Gd,n=3,4);C_6H_5LnCl_2·LiCl·nTHF(Ln=Pr、Nd、Sm、Gd,n=2、3、5);(C_6H_5)_2GdCl·LiCl·2THF;[(C_6H_5)_2NdCl]_2·LiCl·4THF。测定了C_6H_5GdCl_2·4THF的晶体结构。     

4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes(SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon(SIPOS) FP termination has been fabricated. The relative dielectric constant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO2dielectric,leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leakage current 20 μA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design.     

Temperature-dependent characteristics of 4Hben SiC junction barrier Schottky diodes

The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300 ℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.     

Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked dielectric

Atomic layer deposited(ALD) Al2O3 /dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8°off-axis 4H-SiC(0001) epitaxial wafers are investigated in this paper.The metal-insulation-semiconductor(MIS) capacitors,respectively with different gate dielectric stacks(Al2O3/SiO2,Al2O3,and SiO2) are fabricated and compared with each other.The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field(≥12 MV/cm) comparable to SiO2,and a relatively low gate leakage current of1×10-7A/cm2 at an electric field of4 MV/cm comparable to Al2O3.The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage,indicating a less effective charge and slow-trap density near the interface.     

斜抽运无机液体激光器的流场热分布

激光二极管斜抽运的多增益段串接的液体激光器能够明显地提高激光光束质量、获得较高的输出功率.针对斜抽运子增益段工作时所涉及的流动、传热和壁面耦合,建立了计算子增益段流场热分布的流-热-固耦合模型,应用有限单元法完成了其瞬态流场热分布的数值模拟.该方法排除了不精确的换热系数对计算结果的影响,使得换热系数不再是计算的先决条件,而只是计算结果之一,并且为评价流道形状、流速、吸收系数等因素对流场热的影响,以及进一步改进和控制液体激光介质的流场热分布,提供了可靠的分析方法.数值模拟研究表明:换热系数是空间位置的函数,