Ge基二维正方晶格光子晶体带隙优化设计

采用平面波展开法模拟二维光子晶体在E极化和H极化下的能带结构,研究Ge基二维正方晶格光子晶体的填充比以及晶格排列结构对最大禁带宽度的影响。结果表明：在空气背景材料中填充Ge柱的介质柱结构中,可产生TE、TM带隙,且各方向完全带隙出现在r/a=0.19~0.47范围内,最大完全帯隙禁带宽度可以达到0.064（归一化频率）;在选取Ge为背景材料的空气孔型结构中,同样可产生TE、TM带隙,且各方向完全带隙出现在r/a=0.46~0.49范围内,最大完全帯隙禁带宽度可以达到0.051（归一化频率）。同时,不论在介质柱型还是空气孔型结构中,带隙宽度都随着r/a的增大呈先增大后减小的趋势。     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

Reference-frame-independent quantum key distribution of wavelength division multiplexing with multiple quantum channels

Reference-frame-independent quantum key distribution (RFI-QKD) can allow a quantum key distribution system to obtain the ideal key rate and transmission distance without reference system calibration, which has attracted much attention. Here, we propose an RFI-QKD protocol based on wavelength division multiplexing (WDM) considering finite-key analysis and crosstalk. The finite-key bound for RFI-QKD with decoy states is derived under the crosstalk of WDM. The resulting secret key rate of RFI-QKD, which is more rigorous, is obtained. Simulation results reveal that the secret key rate of RFI-QKD based on WDM is affected by the multiplexing channel number, as well as crosstalk between adjacent channels.     

分子动力学模拟研究聚乳酸/聚酰胺11共混物的相容性

采用分子动力学(MD)模拟方法在COMPASS力场下,研究了不同质量比(10/90,30/70,50/50,70/30和90/10)聚乳酸(PLA)/聚酰胺11(PA11)共混物的相容性.研究结果表明:不同比例下PLA/PA11共混物的Gibbs自由能变化均大于零,其共混物很难形成均相体系;共混体系结合能的计算以及不同组分分子间C—C原子对径向分布函数的分析揭示了PLA和PA11的相互作用主要源自其分子间的范德华力;此外,模拟得到的所有比例下共混物的Flory-Huggins相互作用参数(χ)均大于临界Flory-Huggins相互作用参数(χcritical),进一步证明PLA与PA11不能形成相容体系。     

光学仪器密封泥子

以往通用的光学仪器密封材料是以地蜡、松香等混合熬制而成的一种地蜡型密封蜡。这种密封蜡的耐高低温性能较差。室温硫化硅橡胶、合成橡胶密封膏,环氧树脂密封胶等也都曾用作光学仪器密封材料。它们虽然不同程度地克服了地蜡型密封蜡的某些弊病,从而满足     

多组元化合物晶体生长过程中的双扩散对流现象

针对多组元化合物晶体的Bridgman生长过程,通过对液相区流场和浓度场的数值模拟,研究生长过程中容器内部双扩散对流与组分分布的情况.首先对比了三段场和梯度场炉壁温度设计情况下液相区的流体双扩散对流以及组分分布情况.在此基础上,针对梯度场炉壁温度条件,分析了不同参数的影响.结果表明:在溶质格拉晓夫数较大时,它的增大能够明显地削弱液相区的流体流动,从而使得界面附近的组分分布也产生变化;此外,拉晶速度的增大也能够使得液相区的双扩散对流受到抑制.     

Single-Photon Detection at Telecom Wavelengths

A single-photon detector based on an InGaAs avalanche photodiode has been developed for use at telecom wavelengths. A suitable delay and sampling gate modulation circuit are used to prevent positive and negative transient pulses from influencing the detection of true photon induced avalanches. A monostable trigger circuit eliminates the influence of avalanche peak jitter, and a dead time modulation feedback control circuit decreases the afterpulsing. From performance tests we lind that at the optimum operation point, the quantum efficiency is 12% and the dark count rate 1.5 × 10^-6 ns^-1, with a detection rate of 500 kHz.     

运用正交试验法加工1/4波片

本文主要介绍将有机薄膜加热到软化点以上温度后,定向拉伸到一定的程度,再冷却成型而制作具有确定波长的1/4波片,为了减少试验次数,而采用正交试验法来决定快速找出合适的工艺参数的方法。