密立根油滴实验数据的统计处理

密立根油滴实验的数据处理多采用密立根提出的求各油滴电荷值Ｑ的最大公约数的方法．众所周知，最大公约数适用于整数，而Ｑ值常非整数，且有随机误差．要确定基本电荷值ｅ（Ｑ的最小值），必须有大量Ｑ值，同时要区分随机误差和确有的小电荷值就得参考ｅ的已知值或约值．另外，有时测得油滴电荷值Ｑ约为０．５ｅ、１．５ｅ、２．５ｅ、……．面对这些根本性的困难，我们提出用统计直方图的新方法来处理数据，从而合理地确定基本电荷值．     

配合物[Pd(L)(trp)]Cl·5H_2O(L=phen，5-NO_2phen)的合成、抗癌活性及其DNA作用研究

合成了两个混合配体配合物[Pd(phen)(trp)]Cl·5H_2O （1） 和 [Pd(5- NO_2phen)(trp)]Cl·5H_2O （2）（其中phen = 1，10-phenanthroline，5- NO_2phen = 5-nitro-1,10-phenanthroline，trp = L-tryptophan）。配合物对肺 腺癌细胞AGZY-83a均具有一定的杀伤活性，IC_(50)值分别为158.5 μg/mL和大于 293.0 μg/mL。荧光法测定配合物与鱼精DNA的结合常数（K）分别为6.36 * 10~6 和3.64 * 10~6。荧光光谱、紫外可见光谱和粘度法证实配合物主要以插入方式与 DNA结合。     

疑问,学生求知的动力

孔子日：“学启于思，思启于疑．”“学贵有疑，小疑则小进，大疑则大进．”疑是学习的开始，疑是思索的源头，疑是闪现创造力火花的开端，有疑才能激发学生认识上的冲突，引发强烈的求知欲，在探求未知的过程中点燃创新思维的火花．     

二维网状Pd(Ⅱ)配合物的合成、晶体结构及电化学性质(英文)

A novel palladium(Ⅱ) complex [Pd(H2bpdc)Ala]Cl·3H2O (where H2bpdc is 2,2′-bipyridine-3,3′-dicar- boxylic acid and Ala is L-alanine) has been synthesized and characterized by IR spectra and elemental analysis. The crystal structure of the complex has been determined by single-crystal X-ray diffraction analysis. It crystallizes in triclinic system, space group P1 with a=0.685 5(2) nm, b=0.988 4(4) nm, c=1.349 6(4) nm, α=98.375(8)°, β= 97.900(15)°, γ=90.118(15)°, V=0.895 9(5) nm3, Z=2. In the molecule, Pd(Ⅱ) atom is four-coordinated and located at the centre of a planar quadrangle. The complex is assembled via intramolecular π-π stacking interactions and hydrogen bonds, which forms 2D network. The cyclic voltammetric behavior of the complex was also investigated.     

2-取代苯并噻吩类化合物合成研究进展

2-取代苯并噻吩广泛的存在于天然产物中,独特的分子结构使其表现出了较高的药理和生物活性,常被用于药物化学和材料化学中。已有多种具有苯并噻吩骨架药物用于临床,故具有极高的研究价值。本文结合国内外学者对这方面的相关研究,重点对2-苯基苯并噻吩、2-酰基苯并噻吩和2-氨基苯并噻吩类化合物的合成方法进行了综述。     

Wn C0,±(n=1,…,6)团簇结构与电子性质的理论研究

利用密度泛函理论(DFT)中的杂化密度泛函B3LYP在Lanl2dz基组水平上对WnC0.±(n=1,…,6)团簇的各种可能构型进行几何结构优化,得出它们的基态构型,并对基态构型的稳定性和电子性质进行理论研究.结果表明,当n＞3时,稳定构型从平面转变成立体结构,同时C原子趋向于表面最稳定;C原子的掺入使得Wn团簇的稳定...     

Radiation induced inter-device leakage degradation

The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.