Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

In this paper, we adopted thermally stable HfO_xN_y as gate dielectric for TiN/HfO_xN_y/AlGaN/GaN heterostructure field-effect transistors(HFETs) application. It demonstrated that the surface morphologies, composition, and optical properties of the HfO_xN_y films were dependent on oxygen flow rate in the O_2/N_2/Ar mixture sputtering ambient. The obtained metal–oxide–semiconductor heterostructure field-effect transistors by depositing HfO_2 and HfO_xN_y dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900℃, the device using HfO_xN_y dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO_2 gated one at 600℃. This result shows that the HfO_xN_y dielectric is a promising candidate for the self-aligned gate process.     

LiCl/NaY主客体复合材料的制备及其湿敏性质

利用热分散法将LiCl分散到NaY分子筛笼形孔道内制备了LiCl/NaY主客体湿敏材料,该材料保持了LiCl体相材料优良的湿敏特性,同时由于分子筛孔道的限域作用及LiCl盐与分子筛载体间的强离子键合作用,克服了LiCl体相材料的某些固有缺陷.分子筛结构对这种主客体材料有很大影响,具有笼形三维孔道结构的分子筛如NaY更适于作主体材料.二维孔道型的ZSM-5及一维直孔道的丝光沸石则效果差得多.     

生物素化壳聚糖修饰的PLGA纳米粒的制备及表征

合成了生物素化壳聚糖(Bio-CS),并通过核磁共振(1HNMR)及电感耦合等离子体光质谱法(ICP-MS)对其进行结构确证.采用溶剂挥发法(W1/O/W2)制备聚乳酸-羟基乙醇酸(PLGA)纳米粒,并通过共价交联法对纳米粒进行Bio-CS表面修饰.未修饰的PLGA纳米粒在扫描电镜下观察呈规则球状形态,平均粒径为(248.4±21.0)nm,Zeta电势为-(21.21±2.13)mV,Bio-CS修饰后的PLGA纳米粒保持球状形态,平均粒径为(268.3±23.4)nm,Zeta电势为(25.45±2.59)mV.采用X射线光电子能谱(XPS)以及试剂盒对纳米粒表面生物素进行定性及定量研究,结果显示,经过Bio-CS修饰后的纳米粒表面含有N,S元素,生物素取代度为31%的Bio-CS修饰的PLGA纳米粒,其表面生物素含量为(1.36±0.34)μmol/100mg纳米粒.     

含苯并噻唑氟化聚酰亚胺制备及非线性光学性质

采用Mitsunobu反应将杂环偶氮生色分子键入氟化聚酰亚胺母体制备新型的侧链含氟聚酰亚胺非线性光学(NLO)材料.采用傅里叶变换红外(FT-IR)光谱、紫外-可见(UV-Vis)光谱、1H核磁共振(1HNMR)谱和凝胶色谱(GPC)对材料进行表征.热分析结果表明侧链型聚酰亚胺具有较高的玻璃化转变温度(Tg)(184-188℃),热分解温度(Td)高达322℃.采用简单全反射法于1550nm处测定聚酰亚胺的电光系数(γ33),含苯并噻唑偶氮苯胺的聚酰亚胺(PI1)具有较高的电光系数15pm·V-1.