无向图上最小树的唯一性定理

本文研究各边具非负长度的有限无向图中最小树的唯一性,得到下述定理:H为图G上唯一最小树的充要条件是对任一不属于H之边e,图H∪{e}所含之唯一圈中,e是唯一最长边. 给定无向图G=(X,U),X为顶点集合,U为边集合,对边e∈U,给定长度l(e)≥     

部分耗尽SOI MOSFET总剂量效应与偏置状态的关系

实验表明SOI MOSFET掩埋氧化层中的总剂量辐射效应与辐射过程中的偏置状态有关. 对诱发背沟道泄漏电流的陷阱电荷进行了研究. 建立一个数值模型来模拟不同偏置下陷进电荷的建立, 它包括辐射产生的载流子复合和俘获的过程. 模拟结果与实验结果相符, 解释了总剂量辐射效应受偏置状态影响的机理.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Contrast Adaptation Decreases Complexity in Retinal Ganglion Cell Spike Train

The difference in temporal structures of retinal ganglion cell spike trains between spontaneous activity and firing activity after contrast adaptation is investigated. The Lempel-Ziv complexity analysis reveals that the complexity of the neural spike train decreases after contrast adaptation. This implies that the behaviour of the neuron becomes ordered, which may carry relevant information about the external stimulus. Thus, during the neuron activity after contrast adaptation, external information could be encoded in forms of some certain patterns in the temporal structure of spike train that is significantly different, compared to that of the spike train during spontaneous activity, although the firing rates in spontaneous activity and firing activity after contrast adaptation are sometime similar.     

轴角编码器测量中偏心带来的误差分析

介绍了应运多面体和自准直光管组合测量高准确度编码器角度的原理和方法，具体分析了多面体中心和编码器轴中心偏心时对测量角度产生的测量误差，并对自准直光管光轴和多面体中心、编码器轴中心两者偏心连线不重合时产生的测量误差进行了分析，同时对两中心偏心的方向进行了判定．实验证明，多面体中心与编码器轴中心不重合时对测量将产生按正弦或余弦规律变化的系统误差，同时自准直光管光轴和两者中心连线不重合对测量结果将不会产生影响．     

氨基硅烷磁性纳米粒子修饰碳糊电极固定血红蛋白的过氧化氢传感器

过氧化氢(H_2O_2)不仅是许多高选择性的过氧化物酶的副产物,而且是食品、制药、临床、工业和环境分析等领域中的一种重要媒介体.近年来,对H_2O_2测定的研究尤为活跃.血红蛋白(Hb)具有良好的催化活性,经济价廉,在酶电极的制备及H_2O_2的催化测定方面有广泛的研究.氨基硅烷磁性纳米材料是近年来发展起来的一类新型的磁性纳米材料,它不仅同时具有纳米材料的独特性能和超顺磁性,而且易与具有亲和配体的蛋白质、酶、抗体等形成共价键而将其固定在材料的表面.     

X射线显微术

综述了Ｘ射线显微术的基本原理，成像模式和技术及其在生命科学，材料科学等方面应用的新进展，同时简述了Ｘ线射显微术应用过程中应注意的几个问题。     

分析化学实验演示的计算机模拟

介绍分析化学实验演示计算机辅助教学(CAI)软件。