采用拟合偏差分析法建立生长毛兔日增重模型

本文讨论了在建立生长毛兔的日增重──日粮蛋能比模型过程中，对具有重复测量的观测值，即对在每个点ｘｉ（ｉ＝ １， ２， ３，…ｋ）都对应有两个以上观测值 ｙｉｊ（ｊ＝２， ３， ４…，ｎ）的数据所假定的一元线性回归模型进行拟合偏差分析，检验线性模型的合理性，最终确定模型形式的方法．     

橙皮苷的提取与橙皮苷-钕配合物的合成

采用碱提酸沉法从桔子皮中提取橙皮苷,并以橙皮苷化合物为配体与钕金属离子配位,合成出橙皮苷-钕配合物.利用傅里叶红外光谱仪(KBr压片),对橙皮苷及其配合物进行了结构表征.     

蒙药材冷蒿中黄酮类化合物的测定及体外抗氧化性研究

采用分光光度法测定了冷蒿中黄酮类化合物的含量,通过Fenton反应测定了冷蒿黄酮类化合物提取液清除羟基自由基的能力。结果表明,冷蒿中黄酮类化合物含量为42.3mg/g,样品回收率为92.0%—99.6%。黄酮类化合物提取液对羟基自由基清除作用随黄酮类化合物含量的增高而增加。     

Mo活化NH3的自旋禁阻反应机理

采用密度泛函理论的UB3LYP方法,计算研究了气相中Mo活化NH3的反应机理。为了理解由Mo活化NH3过程中自旋翻转行为,对自旋态分别为七、五、三和单等4个反应势能面进行了计算研究,其结果表明,Mo活化NH3的过程是通过各自旋态势能面交叉产生的典型的自旋禁阻反应,最低能量交叉点(MECPs)附近的系间窜越导致2步H转移和脱H2反应能垒降低。此外运用自然键(NBO)轨道理论分析了反应中较为重要的几个物种的成键特性。通过计算在最低能量交叉点(MECPs)附近不同自旋态之间的自旋-轨道耦合常数,再运用Landau-Zener跃迁几率公式估算了MECPs处系间窜越几率。所确定的最低能量反应路径为:7Mo+NH3→7IM1→7/5MECP1→5TS12→5IM2→5/3MECP2→3TS23→3IM3→3TS34→3IM4→3HMoN+H2。     

Developments of High-Efficiency Flexible Cu（In,Ga）Se2 Thin Film Solar Cells on a Polyimide Sheet by Sodium Incorporation

We present the fabrication of flexible Cu（In,Ga）Se2 （CIGS） solar cells on a polyimide （PI） sheet with and without Na incorporation. A sodium element is incorporated into the CIGS absorber by using a NaF precursor after Mo back contact deposition. X-ray diffraction patterns show that the （112） preferred orientation of the as-grown GIGS films is decreased by Na incorporation. The secondary phase of （Inx,Gal-x）zSe3 is observed for the CIGS films with Na. There is no significant difference in the grain size with and without Na incorporation from surface and cross-sectional SEM images. Additionally, the increase of carrier concentration and decrease of resistivity of CIGS absorber are induced by Na doping. Finally, the flexible CIGS solar cells on PI sheets with efficiency close to 11%, containing Na, are achieved. The improvement of cell efficiency can be attributed to the modified electrical properties of the CIGS film by Na incorporation.     

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching＊

We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.     

Influence of Si doping on the structural and optical properties of InGaN epilayers

Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing tile formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.     

PC/YAG：Ce荧光树脂的制备及光谱分析

采用熔融共混法和高温压模法制备出PC/YAG:Ce荧光树脂片,样品经减薄和抛光处理后,通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、光致发光(PL)、透射光谱等测试手段进行分析。厚度为0.87 mm的样品在500~800 nm范围内的透过率约为65%。样品主相为Y₃Al₅O₁₂,在342 nm和448 nm有两个激发峰。样品的发射光谱在532 nm有一宽峰,属于Ce³⁺的5d→4f特征跃迁发射。荧光树脂片中荧光粉含量越高,样品发射强度越大,是一种适合用于白光LED封装的新型荧光材料。     

Synthesis and Crystal Structure of N,N′,N″- Tris-（2-aminophenyltriphenylphosphium）- benzene- 1,3,5-tricarboxamide

A new tripodal P,N ligand （C63H48N3O3P3） was prepared and characterized by elemental analysis, IR and single-crystal X-ray diffraction. The crystal belongs to the monoclinic system, space group P21/c with a = 13.013（3）, b = 28.406（6）, c = 14.911（3） A^°, β= 111.04（3）°, V= 5144.6（18） A^°^3 Z = 4, Dc = 1.276 g/cm^3, Mr = 987.95, λ（MoKa） = 0.71073 A^°,μ = 0.17 mm^-1, F（000） = 2064, R = 0.0786 and wR = 0.1545. A total of 43260 unique reflections were collected, of which 5112 with I 〉 2σ（I） were observed. The title compound has a central benzene ring, which is linked by -NH-CO- bonds to three 2-aminophenyltriphenylphosphium moieties, of which two with P（1） and P（2） centers are pointing to the same face of the central aryl ring, while the third one directs oppositely, forming a pseudo-propeller. In the crystal structure, there exist face-to-face π-π stacking interactions which increase the stability of the crystal structure.     

高分子光伏材料聚对苯乙烯撑-喹喔啉共聚物的合成与光学性能研究

高分子光伏材料聚对苯撑乙烯撑(PPV)由于低廉的价格, 容易加工的性能与可调的光学性能, 有可能成为新一代太阳能材料. 然而PPV较宽的带隙阻碍了PPV太阳能电池效率进一步提高. 合成了一种较低带隙的新型高分子光伏材料 PPV-PQ. 用NMR, FT-IR, 元素分析, GPC和TGA与循环伏安法对PPV-PQ进行了结构表征与性能检测, 并对它在氯仿溶液与固态薄膜下的紫外-可见吸收与荧光发射光谱进行了研究. 结果显示, 由于在固态下存在较强的分子间作用, 分子链的共平面性增加, 所以PPV-PQ无论是紫外-可见吸收, 还是荧光发射光谱, 在固态薄膜下都比在氯仿溶液里发生明显红移. 即使在浓溶液中, 分子链间也存在较强的作用力, 使得PPV-PQ荧光发射峰随溶液浓度的增加而发生红移. 紫外-可见光谱显示, PPV-PQ由于大体积的吸电子单元引起了较大的空间位阻, 最大吸收峰比PPV稍微蓝移, 但吸收却比PPV向长波延展, 带隙比PPV低, 只有1.92 eV. 循环伏安法结果表明PPV-PQ与PCBM两者的LUMO之间有足够的能量差异, 加上PPV-PQ与富勒烯衍生物C117共混物薄膜发生荧光猝灭, 都说明PPV-PQ上光激发电子能够转移到富勒烯衍生物上. 因此, PPV-PQ可以用作高分子光伏材料.