丁酮分子的共振增强多光子电离解离研究

利用可调谐染料激光研究了丁酮分子的共振增强多光子电离解离过程,发现在428～448nm激光波段丁酮分子发生的是经4p和4dRydberg态的(3+1)多光子过程。此外,我们还用“梯开关”模型对丁酮母体离子的解离机理和各碎片来源作了详细的分析,分析认为在丁酮母体离子的解离过程中存在H原子重排与电荷的重新分布现象。     

阻垢剂阻BaSO4垢性能的电导滴定评价法

采用一种基于电导滴定原理的评价方法,通过测定电导滴定过程中不同阻垢剂在相同浓度下所能维持的BaSO4的最大相对过饱和度来评价阻垢性能。实验对阻垢剂聚环氧琥珀酸(PESA)、聚天冬氨酸(PASP)、二亚乙基三胺五亚甲基膦(DEPTMP)、六偏磷酯钠(SHMP)阻BaSO4垢的性能分别采用了电导滴定法及静态阻垢法进行测定并比较。电导滴定法对阻垢剂阻BaSO4垢性能的测试结果表明,阻垢剂PESA、PASP、DTPMP和SHMP对BaSO4垢的阻垢能力大小为:PESA>PASP>DEPTMP>SHMP,这与静态阻垢法的实验结果一致,表明电导滴定法与静态阻垢法对阻垢剂阻BaSO4垢的评价结果具有一致性,电导滴定法评价阻垢剂对BaSO4垢的阻垢性能具有快速、简单、易行的优点。而且实验表明,电导滴定法的RSD为0.020,而静态阻垢法为0.069,说明电导滴定法的重现性优于静态阻垢法。该法还可用于评价阻垢剂对BaSO4垢的协同阻垢效应。     

硬弹性聚丙烯的排状堆积片晶

用广角X射线衍射、小角X光散射等手段对硬弹性聚丙烯中排状堆积片晶的形成及结构进行了研究。结果表明,应力场下聚丙烯熔体结晶,得到的硬弹性聚丙烯具有垂直于挤出方向而又平行堆积的片晶结构(即排状堆积片晶)。熔融温度越高,排状堆积片晶所需的熔体拉伸比越高。而随着熔体所受拉伸比的增加,片晶厚度有所增加。随着熔融温度升高,片晶厚度下降。热处理温度在110-120℃之间,片晶厚度随热处理温度升高明显增加。     

电纺纤维在超级电容器中的应用

对高性能超级电容器不断增长的需求促进了电极隔膜和电极材料的快速发展.静电纺丝法制备的纳米纤维具有较高的孔隙率、较好电化学活性、较大的表面积以及良好的结构稳定性等优点,已被广泛应用于超级电容器的隔膜和电极材料.本文简要综述了近年来电纺纳米纤维在超级电容器用隔膜和电极材料的研究进展;着重讨论了通过静电纺丝和其他后处理方法制...     

基于关联规则和技术功效矩阵的企业技术创新机会发现和辅助决策方法

为助力科技型创新企业准确且快速地从外部捕获创新技术机会, 提出一种企业技术机会发现和辅助决策方法. 首先, 挖掘领域内的技术热点、技术重点和有潜力的技术作为领域技术创新机会. 然后, 通过关联规则分析领域技术机会和企业已有技术之间的相关性, 进一步结合技术掌握度和新颖度, 识别更适合企业的技术创新机会. 最后, 创新性地采用Sen-BERT语言模型和K-means聚类方法构建技术功效矩阵, 辅助企业从功能需求的角度进行技术创新决策. 以电动汽车领域为例验证了该方法的可行性.     

Result of search for low velocity exotic particles

The L3＋C experiment, taking advantage of the L3 muon magnetic spectrometer, measured the spatial tracks of charged cosmic ray particles to obtain rigidity as well as velocity. One possible low velocity exotic particle is observed. The existing uncertainties are discussed, and the flux upper limit of the low velocity exotic particles from this observation is deduced based on the assumption of a null observation. The result is 6.2×10^-10 cm^-2·s^-1·sr^-1 at 90% confidence level in the velocity range from 0.04c to 0.5c.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

双层加筋板低频声的隔离与有源控制

为探讨加筋对双层结构低频隔声及有源控制的影响,分析了筋条数目及布放位置对双层加筋结构低频隔声性能、有源控制策略选取及有源隔声性能的影响。首先利用模态叠加与声-振耦合理论对双层加筋结构建模,然后采用数值算例对上述问题展开探讨。研究发现,筋条数目增多或筋条靠近基板的中间位置布放,将有利于双层加筋结构低频隔声性能的提高。对于有源控制措施,声控制策略与力控制策略相比,前者的控制效率较高且降噪效果较好。由于筋复杂的耦合影响,添加多条筋或筋条靠基板中间布置时有源控制效果减弱,需施加多个点源才能获得较好的降噪效果。      

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

迷迭香中微量元素与黄酮类化合物的含量分析

以甲醇为溶剂用索氏提取法提取迷迭香中总黄酮,用比色法测定了其含量;并采用电感耦合等离子体-原子发射光谱仪(ICP-AES)测定了该植物中9种微量元素的含量。结果表明:迷迭香中黄酮类化合物的含量为1.61mg/g,加样回收率为98.98%—100.06%,RSD为0.419%(n=6),该法操作简便,重现性好,适合于黄酮类化合物含量的测定;迷迭香中Fe、K、Mg、Mn、Zn含量丰富。