Conceptual design of Hefei advanced light source

The conceptual of Hefei Advanced Light Source, which is an advanced VUV and Soft X-ray source, was developed at NSRL of USTC. According to the synchrotron radiation user requirements and the trends of SR source development, some accelerator-based schemes were considered and compared; furthermore storage ring with ultra low emittance was adopted as the baseline scheme of HALS. To achieve ultra low emittance, some focusing structures were studied and optimized in the lattice design. Compromising of emittance, on-momentum and off-momentum dynamic aperture and ring scale, five bend acromat (FBA) was employed. In the preliminary design of HALS, the emittance was reduced to sub nm·rad, thus the radiation up to water window has full lateral coherence. The brilliance of undulator radiation covering several eVs to keVs range is higher than that of HLS by several orders. The HALS should be one of the most advanced synchrotron radiation light sources in the world.     

同步辐射真空紫外光电离质谱研究乙烯扩散火焰

本文利用探针取样法结合同步辐射真空紫外光电离和分子束质谱技术研究了常压下的乙烯扩散火焰.通过测量光电离质谱和光电离效率谱分辨了该火焰中大部分的燃烧中间体及产物;通过改变探针取样位置以及半定量计算得到了其中部分燃烧中间体及产物的摩尔分数曲线.实验结果为探索多环芳烃和烟尘在扩散火焰中形成的最初阶段的反应机理提供了依据.     

Micro-fabrication process of vapor cells for chip-scale atomic clocks

As the key part of chip-scale atomic clocks(CSACs), the vapor cell directly determines the volume, stability,and power consumption of the CSAC. The reduction of the power consumption and CSAC volumes demands the manufacture of corresponding vapor cells. This overview presents the research development of vapor cells of the past few years and analyzes the shortages of the current preparation technology. By comparing several different vapor cell preparation methods, we successfully realized the micro-fabrication of vapor cells using anodic bonding and deep silicon etching. This cell fabrication method is simple and effective in avoiding weak bonding strengths caused by alkali metal volatilization during anodic bonding under high temperatures.Finally, the vapor cell D2 line was characterized via optical-absorption resonance. According to the results,the proposed method is suitable for CSAC.     

喷墨打印垂直有机光晶体管及其性能优化

通过旋涂透明源极并在其上采用喷墨打印的方式制备有源层及源漏电极,从而得到一种垂直结构光晶体管,并获得了较好的光电性能,其响应率为～1 500A/W,探测率可达1.6×10~(14) Jones。向有源层中掺杂一定比例的电子捕获材料PCBM,使有源层中光生空穴复合减小,光生电流增大,从而进一步提高其光探测性能。研究发现当掺杂5wt%电子捕获材料时,垂直结构光晶体管性能达到最优,响应率为～6 000A/W,探测率可达1.4×10~(15) Jones.     

LPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性

利用电子自旋共振波谱（ESR）仪,分析由低压化学气相沉积（LPCVD）法制备的高纯半绝缘4H-SiC材料本征缺陷.结果发现,在暗场条件下获得的缺陷信息具有碳空位（V_C）及其络合物的特征;谱线具有半高宽较大、峰谷明显不对称的特点.分析认为造成ESR谱线半高宽较大及峰谷不对称现象的主要原因是测试温度较高.同时,吸收谱中峰谷不对称现象及较大半高宽现象的出现还与不对称的晶格结构及缺陷浓度的不均匀分布有关.在110 K测试温度下,能级上的电子分布对ESR谱特性影响很小. 关键词： 低压化学气相沉积 高纯半绝缘4H-SiC 电子自旋共振 本征缺陷     

Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究

采用原子层淀积(ALD)实现了10nm Al₂O₃为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT). 通过对MOS-HEMT器件和传统MES-HEMT器件室温特性的对比,验证了新型MOS-HEMT器件饱和电流和泄漏电流的优势. 通过分析MOS-HEMT器件在30—180℃之间特性的变化规律,与国内报道的传统MES-HEMT器件随温度退化程度对比,得出了器件饱和电流和跨导的退化主要是由于输运特性退化造成的,证明栅介质减小了引 关键词： 原子层淀积 AlGaN/GaN MOS-HEMT器件 温度特性     

氧等离子体处理对纳米二氧化硅溶胶涂覆高强、高模聚乙烯纤维拉伸性能的影响

基于艾琳方程,提出用于定量分析纤维表面和纳米涂覆层间的纳米界面结构的理论模型.实验结果表明,纤维高分子链段受力塑性变形时,纳米界面结构内纳米微粒阻碍其形貌变化产生热激活体积,该热激活体积是纳米界面结构性能的重要表征;氧等离子体处理对纳米二氧化硅溶胶涂覆高强、高模聚乙烯纤维有增韧作用.由不同处理样品的扫描电子显微镜图片和傅里叶变换红外光谱曲线对比分析可知,经氧等离子体处理纳米二氧化硅溶胶涂覆高强、高模聚乙烯纤维的纳米涂覆层纳米颗粒分布均匀,纳米颗粒还填补纤维表面微观缺陷,活性官能团被引入到纤维表面. 关键词： 激活体积 氧等离子体 高强、高模聚乙烯纤维 纳米界面结构     

重金属碲酸盐玻璃中Ho~(3+)的红外辐射特性

制备了高折射率Ho3+单掺和Ho3+/Yb3+共掺低声子能量重金属碲酸盐玻璃.根据Judd-Ofelt理论对吸收光谱进行拟合,求得Ho3+强度参数Ωt(t=2,4,6)分别为4.373×10-20,1.906×10-20和1.451×10-20cm2,并进一步计算了Ho3+在红外区各能级跃迁的振子强度、自发辐射跃迁概率、辐射寿命和荧光分支比等光谱参数.982 nm激发下,铋碲酸盐玻璃中Yb3+直接敏化Ho3+,在红外区产生有效红外发射.Ho3+吸收与发射截面在1.95和2.05μm处分别高达5.63×10-21和6.24×10-21cm2,大于Ho3+掺杂磷酸盐和氟化物玻璃,这有利于降低激光抽运阈值,实现高效Ho3+激光输出.较低的声子能量和较大的发射截面表明,Ho3+/Yb3+共掺杂铋碲酸盐玻璃有望成为良好的红外激光工作物质.     

深切怀念我的导师——魏荣爵院士

<正>今年4月6日魏先生与世长辞,至今已近4个月,但他的音容笑貌还时时刻刻出现在我的眼前,在此以沉痛心情来回忆和怀念魏先生。魏先生于1916年生于湖南     

Diffusion of aluminum in MgO： A thermodynamic approach study

We have applied a thermodynamical model to calculate the diffusion coefficient of aluminum in MgO with the aid of bulk elastic properties. Our calculated diffusivities as a function of temperature and pressure are compared with the existing results derived from experimental or theoretical investigations. We find that the present model provides a satisfactory estimation for the activation volume and the activation enthalpy.