染料激光腔内双扩束棱镜系统的特性

本文推导了双扩束棱镜系统的角色散公式,从理论上证明了一个不带标准具的、由双棱镜扩束系统组成的调谐腔,能够达到GHz量级(～10~(-2)(?))的窄带可调谐激光,且经实验验证获得了小于4GHz的激光输出,为采用多棱镜系统以获得小于1GHz的窄带激光提供了理论依据.此外,还分析了这种系统具有反射损耗小、偏振运转和调整容易等优点,表明双(多)棱镜扩束系统是一种比较理想的光扩束、滤波、调谐多功能的光学元件.     

A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base—collector bias, and the hole density at the base—collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.     

单轴〈111〉应力硅价带结构计算

基于k·p微扰法计算了单轴〈111〉应力作用下硅的价带结构, 并与未受应力时体硅的价带结构进行了比较. 给出了单轴〈111〉应力作用下硅价带顶处能级的移动、分裂以及空穴有效质量的变化情况. 计算所得未受应力作用时硅价带顶处重空穴带、轻空穴带有效质量与相关文献报道体硅有效质量结果一致. 拓展了单轴应力硅器件导电沟道应力与晶向的选择范围,给出的硅价带顶处重空穴带、轻空穴带能级间的分裂值和有效质量随应力的变化关系可为单轴〈111〉应力硅其他物理参数的计算提供参考. 关键词： 单轴应力硅 k·p法')" href="#">k·p法 价带结构     

薄膜SOI上SiGe HBT集电结耗尽电荷和电容改进模型

文章研究了SOI衬底上SiGe npn异质结晶体管集电结耗尽电荷和电容.根据器件实际工作情况,基于课题组前面的工作,对耗尽电荷和电容模型进行扩展和优化.研究结果表明,耗尽电荷模型具有更好的光滑性;耗尽电容模型为纵向耗尽与横向耗尽电容的串联,考虑了不同电流流动面积,与常规器件相比,SOI器件全耗尽工作模式下表现出更小的集电结耗尽电容,因此更大的正向Early电压;在纵向工作模式到横向工作模式转变的电压偏置点,耗尽电荷和电容的变化趋势发生改变.SOI薄膜上纵向SiGe HBT集电结耗尽电荷和电容模型的建立和扩展为毫米波SOI BiCMOS工艺中双极器件核心参数如Early电压、特征频率等的设计提供了有价值的参考. 关键词： 耗尽电容 SiGe HBT SOI     

在大学物理教学中使用Matlab制作图像和动画的几个实例

从一些典型实例出发,介绍Matlab在大学物理中的具体应用．指出在大学物理课程中适当地加入Matlab图像和动画,可进一步推动基础课程教学方法的现代化进程,使教学内容更加形象、生动而同时兼具科学性．     

Design and Fabrication of Six-Channel Complex-Coupled DFB Quantum Cascade Laser Arrays Based on a Sampled Grating

We designed and fabricated a six-channel complex-coupled distributed feedback （DFB） quantum cascade laser arrays based on a sampled Bragg grating. The six-channel DFB laser arrays exhibit a linear tuning range of 74nm centered at a wavelength of 7.55μm at room temperature. Robust single-mode emission with a side mode suppression ratio about 20 dB was observed, even at full power. The used sampled grating and reflectivity coating on the back facet lead to the peak output power varying from 55 to 82 m W with a small difference in slope efficiency from 100 to 128mW/A.     

Atomic NOON state generation in distant cavities by virtual excitations

A general scheme of generating NOON states of virtually-excited 2N atoms is proposed. The two cavities are fibre-connected with N atoms in each cavity. Although we focus on the case of N = 2, the system can be extended to a few atoms with N 〉2. It is found that all 2N atoms can be entangled in the form of NOON states if the atoms in the first cavity are initially in the excited states and atoms in the second cavity are all in the ground states. The feasibility of the scheme is carefully discussed, it shows that the NOON state with a few atoms can be generated with good fidelity and the scheme is feasible in experiment.     

高重复率电光调Q的高光束质量Nd:YVO4板条激光器

部分端面抽运混合腔板条激光器可以在紧凑的空间内实现大功率高光束质量的激光输出。利用这一技术并结合具有增益高、荧光寿命短等特点的Nd：YVO3晶体．配合新型高重复率的电光Q开关．易于实现高频窄脉冲高光束质量的激光输出。在德国Edge Wave GmbH进行了混合腔电光调Q激光器的合作研究中,实现了高重复率近衍射极限的输出;在以5kHz的高重复率运转时．获得了单脉冲能量7．2mJ,脉宽5．7ns,平均功率约36W的脉冲;当重复率高达50kHz时．输出的激光脉冲的参量是单脉冲能量1.6mJ．脉宽9．5ns,平均功率超过80W。实验所测的光束质量因子M^2小于2。     

瞬子效应在0++胶球的QCD求和规则中的作用

利用包含瞬子效应的QCD求和规则计算了0⁺⁺胶球的质量上限,结果为1.3GeV.还探讨了变动瞬子参量时对QCD求和规则的影响,发现包含瞬子修正的QCD求和规则在瞬子大小为1/3fm时变得很稳定     

石英晶体振荡法监控膜厚研究

给出了石英晶体振荡法监控膜厚的基本原理,在相同的工艺条件下分别用光电极值法和石英晶体振荡法监控膜厚,对制备的增透膜的反射光谱曲线进行了比较,并对石英晶体振荡法的监控结果做了误差分析.结果表明:石英晶体振荡法不仅膜厚监控精度高,而且能监控沉积速率,获得稳定的膜层折射率,从而有效地控制薄膜的光学性能.