镶嵌在氧化硅薄膜中纳米硅的Raman散射研究

系统研究了a- SiO_x 的Raman散射谱及其退火行为 ,并通过退火技术使Si从SiO_x 网络中分凝出来 ,形成纳米硅和SiO₂ 的镶嵌结构 .并利用Raman散射技术研究了这种复合薄膜中纳米硅的声子态 .发现在 1 0 0～ 6 0 0cm,sup>-1的波数范围内 ,纳米硅的Raman谱可用 5条Lorentz线得到很好地拟合 ,并对这 5条线的来源作了确认 ;观测到了在 6 0 0～ 1 1 0 0cm^-1范围内纳米硅的双声子散射 .研究结果表明 ,镶嵌在SiO₂ 介质中的纳米硅具有非晶硅相和纳米硅晶相共存的特点 ,两者均对Raman散射有贡献 .不仅观测到了声子限制效应使一级光学声子频率随纳米硅晶粒尺寸减小而红移这一现象 ,而且还发现 (与体硅相比 )声子限制效应对二级Raman散射具有增强效应 ,并对二级散射模的频率也会产生影响 .     

MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiO_x:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiO_x:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO₂ and HSi-O₃. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.