p型纳米硅与a-Si：H不锈钢底衬nip太阳电池

报道了选用厚度为0．05mm的不锈钢箔作衬底，B掺杂P型氢化纳米硅作窗口层，制备成功开路电压和填充因子分别达到0．90V和0．70的nip非晶硅基薄膜单结太阳电池．UV-VIS透射谱和微区Raman谱证实所用p层具有典型氢化纳米硅的宽能隙和含有硅结晶颗粒的微结构特征．明确指出导致这种氢化纳米硅能隙展宽的物理机制是量子尺寸效应．     

p型纳米硅与a-Si∶H不锈钢底衬nip太阳电池

报道了选用厚度为0.05mm的不锈钢箔作衬底,B掺杂P型氢化纳米硅作窗口层,制备成功开路电压和填充因子分别达到0.90V和0.70的nip非晶硅基薄膜单结太阳电池.UV VIS透射谱和微区Raman谱证实所用p层具有典型氢化纳米硅的宽能隙和含有硅结晶颗粒的微结构特征.明确指出导致这种氢化纳米硅能隙展宽的物理机制是量子尺寸效应.     

SiO_x∶H(0

采用退火后处理的方法，使ＳｉＯｘ∶Ｈ（０＜ｘ＜２）形成纳米硅与二氧化硅的镶嵌结构．利用红外透射谱、Ｒａｍａｎ谱和光致发光谱，系统地研究了不同退火温度对薄膜微结构及室温光致发光谱的影响．发现发光谱均由两个Ｇａｕｓｓ线组成，其中主峰随着退火温度的升高而红移，而位于８３５ｎｍ的伴峰不变．指出退火前在７２０—６１０ｎｍ的波长范围内强的主峰可能来源于膜中的非晶硅原子团，随退火温度的升高主峰的红移是由于非晶硅原子团的长大．而伴峰可能来自硅过剩或氧欠缺引入的某种发光缺陷．１１７０℃退火后在８５０ｎｍ附近出现强的谱带与纳米硅的析出有关，支持了量子限制效应发光模型．     

稳定、优质nc-Si/a-Si:H薄膜的研制和特性分析

利用等离子体增强化学气相沉积技术研制出了优质稳定的氢化非晶-纳米晶两相结构硅薄膜.薄膜的光电导率相对于器件质量的非晶硅有两个数量级的提高；光敏性也较好，光、暗电导比可以达到１０⁴，此外薄膜的光电导谱具有更宽的长波光谱响应.更为重要 的是薄膜的光致退化效应远小于典型的非晶硅薄膜，在光强为５０ｍW／ｃｍ²的卤钨灯光 照２４h后，光电导的衰退小于１０％.这种薄膜优良的光电性能源于薄膜中的非晶母体的存在使其在 光学跃迁中的动量选择定则发生松弛，因而具有大的光学吸收系数和 关键词： 非晶硅 微结构 光致变化     

The p recombination layer in tunnel junctions for micromorph tandem solar cells

A new tunnel recombination junction is fabricated for n–i–p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p + recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n–i–p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 ·cm 2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage V oc = 1.4 V, which is nearly the sum of the V oc s of the two corresponding single cells, indicating no V oc losses at the tunnel recombination junction.     

宏电子学与非晶硅器件

 宏电子学(Macroelectronics)是电子学领域里正在兴起的一门学科.它的内涵,目前主要是指以非晶硅及其合金薄膜材料为基础的大面积集成化电子器件和光电子器件.这里所谓大面积,是相对于微电子学(Microelectronics)研究的主要对象--晶体硅集成电路芯片而言的.前者的面积往往可达数平方分米,而后者一般只有若干平方毫米,至多达平方厘米量级.微电子学在促进人类20世纪文明的过程中起过非常重要的作用,无疑今后也还将发挥积极的影响.然而,微电子学的精髓在于小型化.它的优势主要是在信号或数据的处理、加工方面.而在信号或数据的接收、采集和输出、显示方面,往往须面对相对庞大的客体.它们的面积,由于这样或那样的原因是不能缩小的.     

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phase crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposition.The microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic force microscopy.The results indicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality,such as large grain size,small lattice microstrain and smooth surface morphology on low-cost glass substrates.     

微量硼掺杂非晶硅的瞬态光电导衰退及其光致变化

利用EG&G的瞬态分析测试仪对微量硼掺杂的高氢稀释非晶硅薄膜的瞬态光电导作了测量,并研究了长时间曝光处理对瞬态光电导的影响.发现薄膜的瞬态光电导衰退可以用双指数函数来拟合,说明在样品的光电导衰退过程中有两种陷阱在起作用,估算了陷阱能级的位置.曝光处理后样品的光电导和暗电导不仅没有下降,而且还有所上升,薄膜的光敏性有所改善.很可能曝光过程引起了硼受主的退激活,导致费米能级向导带边移动,使有效的复合中心减少,样品的光电导上升. 关键词： 非晶硅 瞬态 光电导 光致变化     

高光敏性高稳定性氢化非晶硅薄膜的研制

采用“不间断生长/退火”技术,并配之以微量硼补偿,制备出了高性能的氢化非晶硅薄膜(a-Si∶H),其光敏性(σ_ph/σ_d)达到10⁶量级,并且稳定性得以显著提高,在100mW/cm²的白光长时间照射后没有观察到衰退现象。分析指出:高的光敏性及稳定性可归因于带隙缺陷态的显著减少和微结构的明显改善。在诸多因素中,大量原子态氢的退火处理和微量的硼补偿起到了重要作用。     

Microstructure of a-SiOx:H

A set of a-SiOx :H (0.52 ＜x＜1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250℃. The microstructure andlocal bonding configurations of the films are investigated in detail using micro-Raman scattering,X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It isfound that the films are structural inhomogeneous, with five phases of Si, Si2O:H, SiO:H, Si2O3:Hand SiO2 that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si)clusters that are spatially isolated. The average size of the clusters decreases with the increasingoxygen concentration x in the films. The results indicate that the structure of the present films canbe described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by thesubshells of Si2O:H, SiO:H, Si2O3:H, and SiO2.