偶氮染料掺杂高分子薄膜的光谱和光存储性质研究

利用旋涂法,制备了以二乙基胺基〖Ｎ（ＣＨ２ＣＨ３）２〗作为推电子基因、以具有强电负性的羧基（ＣＯＯＨ）作为拉电子基团的推－拉型偶氮染料掺杂的高分子（ＰＭＭＡ）薄膜。在室温下测试了该偶氮染料在溶液和薄膜态的吸收光谱、薄膜态的反射光谱和透过光,发现该薄膜在４００～５５０ｎｍ波长范围内具有强的吸收。在５１４．５ｎｍ光盘静脉测试仪上测试了膜片的静脉光存储性能,结果表明,用低功率Ａｒ＾＋激光（５１４．５ｎ     

Ge-As-S体系玻璃中光学二次谐波发生及其极化机理分析

采用Maker条纹法,在电子束辐射极化条件下的Ge-As-S体系玻璃中观察到二次谐波发生效应 .通过热诱导去极化电流法(TSDC)进行极化机理分析得出,极化区域位于玻璃表面很薄的一 层区域内,与理论计算结果相符. 关键词： Ge-As-S体系玻璃 电子束辐射 Maker条纹 二次谐波发生 TSDC     

酞菁LB薄膜及其旋涂膜光学参数的测量

制备了四新戊氧基酞菁锌LB膜和旋涂膜,采用p偏振反射法测定了两种薄膜在不同温度退火后的折射率n和消光系数k,发现这两种薄膜不仅表现出了相似的光学常数的数值,而且具有相似的随温度变化的趋势.实验结果与理论模拟相一致.     

高质量Yb3+∶CS-FAP激光晶体的生长

本文进行了Yb3+∶FAP与Yb3+∶YAG的对比分析,指出了在激光核聚变领域中Yb3+∶FAP是很有希望的增益介质,针对Yb3+∶FAP吸收光谱宽度很小(4nm)对泵浦源要求苛刻,采用Yb3+∶CS-FAP即以部分Sr2+代替Ca2+造成Yb3+周围环境多样性增加、增加谱宽.参考分析了Ca3(PO4)2-CaF2体系的相图,推测出生长CS-FAP晶体的配料区间,给出了生长晶体的原料制备方法,采用氮气流动、白宝石片封闭保温罩的观察孔和观察窗上贴石英片相结合有效地缓解了在晶体生长过程中组分挥发、开裂、以及氟化物腐蚀窗口等一系列问题.生长工艺参数为:提拉速度1～3mm/h,旋转速度10～20r/min,在流量为20ml/min的流动N2中生长,采用尺寸为60×40mm的Ir坩埚进行生长,线圈尺寸为内径130mm×130mm×8圈,外径155mm×95mm×6圈.得到了尺寸为10mm×20mm的高质量晶体.用X射线粉末衍射分析证明所生长的晶体结构正确.     

突破光学衍射极限,发展纳米光学和光子学

信息技术已经进入纳米时代,纳米光学和光子学正是为满足快速和高密度信息技术的需求而产生、发展的.先进的纳米光学和光子学器件应该是高速、高分辨率和高集成的,形成各类光学和光子学芯片和盘片.由于器件最小特征尺寸和加工分辨率受限于光的衍射极限,现有技术已接近实用化技术的理论极限并且成本很高,只有突破光学衍射极限才能进一步发展纳...     

Green-Light Static Rewritable Optical Storage Properties of a Novel CuTCNQ Derivative Thin Film

A novel charge-transfer complex film: copper-(n-propyl ester 7,7,8,8- tetracyanoquinodimethane-2,5-ylene-(3-propionic acid)) (Cu-TCNQ(C2H4 COOC3H7)2 ) was prepared by spin-coating. Absorption spectra, green-light (514.5nm) static rewritable optical recording properties and rewritable mechanism of this film were studied.The results show that there are two strong absorption peaks at 388nm and 675nm, which can be assigned to electronic transitions in anion radical TCNQ( C2H4 COOC3H7 )2^-. Green-fight optical storage experimental results of this film were as follows: write-in power was 9mW, pulse duration was 80ns; erasing power was 4mW, pulse duration was 500ns; the reflectivity contrast C ≥ 15%; number of write-erase cycles N ≥ 100. It is found that the realization of rewritable optical storage of the Cu-TCNQ(C2H4COOCsH7)2 film is related to the reversible changes of the optical properties, which is caused by the reversible charge transfer between copper and n-propyl ester 7, 7,8,8- tetracyanoquinodimethane-2,5-ylene-(3-propionic acid) in the complex through inducement of laser irradiation.     

用于蓝光存储的无机材料的研究及进展

光存储朝着高密度、大容量、高数据传输率方向发展。下一代的光盘记录将从目前广泛使用的红光波段向蓝光波段发展。本文综述了可用于蓝光记录的新一代超高密度光盘无机存储材料的研究现状和新进展。     

GeSb_2Te_4相变光存储薄膜材料的短波长静态记录特性的研究

研究了单层ＧｅＳｂ２Ｔｅ４真空射频溅射薄膜在４００ｎｍ～８３０ｎｍ区域的吸收、反射光谱和光学常数（ｎ，ｋ），发现ＧｅＳｂ２Ｔｅ４薄膜在４００ｎｍ～６００ｎｍ波长范围内具有较强的吸收。在短波长静态测试仪上测试了ＧｅＳｂ２Ｔｅ４薄膜的光存储记录特性，发现在５１４．５ｎｍ波长用较低功率的激光辐照样品时薄膜在写入前后的反射率变化较大，擦除前后的反射率对比度较低，可通过膜层设计来提高     

Optical absorption properties of Ge-Sb-Te films

The optical properties of monolayer Ge2Sb2Te5 thin films with three different thicknesses prepared by dc magnetron sputtering method at the range of 400-800 nm were studied. The optical absorption coefficients and the optical energy gap (Eg) were calculated, The results gave values for the absorption coefficients in the range of (1.3-7.5)×105 cm-1 which were in the high absorption wavelength region of     

Laser induced crystallization of as-deposited amorphous Ge2Sb2Te5 films

Crystallization is induced by pulsed laser irradiation of s-deposited amorphous Ge2Sb2Te5 films. Changes of the irradiated areas have been analyzed with the reflectivity contrast. As laser fluences increasing,the reflectivity contrast increases from 0% - 2% to 14% - 16%, which indicates the structure of as deposited films transforms from amorphous to crystalline phases. The process of crystallization driven by the movement and rearrangement of atoms is described. And also the influence of the pulse duration on the threshold of crystallization is discussed, the results show that a lower threshold of crystallization can be produced for as-deposited films irradiated by the laser with short pulse duration. However, by the laser with long pulse duration, crystallization can only be formed with a higher threshold. The crystallization of films by irradiation of laser pulses is studied by Raman spectra.