Spectroscopic properties of Nd—doped phosphate glass with a high emission cross section

Neodymium doped phosphate glasses have been prepared by the semi-continuous melting technique. Their absorption and emission spectra have been recorded at room temperature. The Judd－Ofelt theory has been applied to evaluate the stimulated emission cross sections of ⁴F_3/2→⁴I_11/2 transition for Nd³⁺. The higher stimulated emission cross section, 4.0×10^-20cm², is obtained. The fluorescence decays of the ⁴F_3/2→⁴I_11/2 transition of Nd³⁺ are measured for the samples doped (0.7－10) wt% of Nd₂O₃ at room temperature. The concentration quenching of Nd-doped phosphate glass is mainly attributed to cross-relaxation and energy migration. The site-dependent properties of fluorescence spectra and the fluorescence lifetime of the Nd³⁺-doped phosphate glass (with 2.2wt%Nd₂O₃) are studied using laser-induced fluorescence line narrowing techniques, and the site-to-site variations of optical properties are observed at low temperature.     

Read—out of a read—only super—resolution optical disc with a Si mask

A novel read-only super-resolution optical disc structure (substrate/mask layer/dielectric layer) is proposed in this paper. By using a Si thin film as the mask layer, the recording pits with a diameter 380nm and a depth 50nm are read out on the dynamic measuring equipment; the laser wavelength α is 632.8nm and the numerical aperture is 0.40. In the course of reproduction, the laser power is 5mW and the rotation velocity of the disc is 4m·s^-1. The optimum thickness of the Si thin film is 18nm and the signal-to-noise ratio is 32dB.     

Photodarkening in Amorphous As2S3 Thin Films

The photodarkening effect in amorphous As2S3 films is studied.The optical absorption edge shifts to a lower energy after illumination ar the bandgap light of 514.5nm wavelength by an argon laser.The shift in well annealed films can be recovered by annealing at 180℃ for 1 h but in un-annealed films it is irreversible.In addition,it was found that the magnitude of photodarkening ΔE increased with the increase of illumination light intensity and illumination time.The reversibility of photodarkening in amorphous As2S3 films can be applied in optical memories.     

溴代酞菁铜衍生物薄膜的折射率和吸收特性

通过旋涂法在单晶硅片上制备了一系列含有不同数目溴取代基的酞菁铜衍生物：一溴代－四烷氧基酞菁铜（MBTAPcCu），二溴代－四烷氧基酞菁铜（DBTAPcCu），四溴代－四烷氧基酞菁岣（TBTAPcCu）和无溴代－四烷氧基酞菁铜（NBTAPcCu）薄膜，利用同步旋转起偏－检偏器（RAP）型的宽谱扫描全自动椭圆偏振光谱仪测定了上述薄膜的椭偏光谱，获得了该系列薄膜的复折射率、复介电常数和吸收系数，研究了溴取代基对酞菁铜衍生物薄膜光学性质的影响。     

原子力显微镜对TeOx薄膜中短波长静态记录点结构的分析

以真空蒸镀法在K9基底上制备了TeOx单层薄膜,采用特定的定位方法,使用原子力显微镜对不同记录功率下薄膜中短滤长静态记录点（514．5nm)的结构进行了分析。实验结果表明薄膜具有良好的记录灵敏性,在记录功率1．5mW时就可产生较高的反射率对比度,记录点具有明显的凹陷和凸起结构,随着记录功率的提高,凹陷和凸起增强,记录点增大。记录点的形态结构和记录前后反射率对比度是直接相关的。研究揭示了原子力显微镜在提高薄膜存储特性如信噪比,存储密度等方面的分析功能。     

光子学玻璃的应用及其性质

光子学发展到目前阶段, 已经基本上成为与现代电子学平行发展的一门新兴学科。其中的光子学玻璃就是当代特种玻璃的一个重要发展, 也是光子学材料中最重要的一类, 它包括的几个主要方面是激光玻璃和玻璃光纤, 光功能玻璃和非线性光学玻璃, 光波导玻璃和光子存储玻璃等, 内容涵盖了物理、化学、制备工艺、器件应用等多门传统学科以及它们的交叉学科。本文重点介绍光子学玻璃在光子学领域的主要应用及其性质。     

新型AgInSbTe相变薄膜的光学及记录性能

利用直流磁控溅射法制备了一种新型AgInSbTe相变薄膜。示差扫描量热(DSC)实验测定的结晶峰温度为193．92℃。X射线衍射(XRD)表明未经热处理的沉积态薄膜是非晶态,而经过200℃热处理,X射线衍射图出现衍射峰,薄膜从非晶态转变到晶态。同时,研究了晶态和非晶态相变薄膜的吸收率、透射率和反射率随波长的变化。测定了650nm激光作用下的相变薄膜的记录性能,分析了记录功率、记录脉宽对薄膜反射率衬比度的影响,在同一记录脉宽条件下,记录功率越大,反射率衬比度也越大;在同一记录功率条件下,随记录脉宽的增加,反射率衬比度也增大。结果表明,新型AgInSbTe相变薄膜在激光作用下具有较高的反射率衬比度,可获得良好的记录性能。     

Novel material for nonvolatile ovonic unified memory (OUM)－Ag11In12Te26Sb51 phase change semiconductor

In this paper, Ag_{11}In_{12}Te_{26}Sb_{51} phase change semiconductor films have been prepared by dc sputtering. The crystallization behaviour of amorphous Ag_{11}In_{12}Te_{26}Sb_{51} thin films was investigated by using differential scanning calorimetry and x-ray diffraction. It was found that the crystallization temperature is about 483K and the melting temperature is 754.8K and the activation energy for crystallization, E_a, is 2.07eV. The crystalline Ag_{11}In_{12}Te_{26}Sb_{51} films were obtained using initializer. The initialization conditions have a great effect on the sheet resistance of Ag_{11}In_{12}Te_{26}Sb_{51} films. We found that the effect of the initialization condition on the sheet resistance can be ascribed to the crystallinity of Ag_{11}In_{12}Te_{26}Sb_{51} films. The sheet resistance of the amorphous (R_{amo}) film is found to be larger than 1×10^6Ω and that of the crystalline (R_{cry}) film lies in the range from about 10^3 to 10^4Ω. So we have the ratio R_{amo}/R_{cry}=10^2～10^3, which is sufficiently large for application in memory devices.     

GeSbTe与AglnSbTe体系相变光盘的研究进展

自Ovshinsky把相变材料用于光存储以来，一大批具有可逆光存储性能的材料不断出现，其中研究较多的是GeSbTe和AgInSbTe两种体系．文章着重介绍了利用这两种材料制成的相变光盘记录介质的微观结构特点，阐述了其晶化机理；同时，较详细地概述了光盘的堆栈结构及掺杂其他元素对相变光盘性能的影响，并对比说明了GeSbTe和AgInSbTe两种体系在蓝光记录方面的各自特点．     

GdFeCo/AIN/TbFeCo薄膜的变温磁化性能研究

用磁控溅射法制备了GdFeCo/AlN/TbFeCo静磁耦合多层薄膜.振动样品磁强计和克尔磁滞回线测试装置的测试结果表明:25℃不加外磁场时GdFeCo/AlN/TbFeCo静磁耦合多层薄膜读出层(GdFeCo)的极向克尔角为零,读出层呈平面磁化;125℃不加外场时读出层的克尔角最大(O.54°),读出层的磁化方向为垂直磁化;随着温度增高,读出层由平面磁化转变为垂直磁化,在75℃到125℃温度范围内读出层磁化方向很快从平面磁化转变为垂直磁化.对磁化过程的机理研究表明:饱和磁化强度和有效各向异性常量影响读出层磁化方向的转变过程,但主要受读出层饱和磁化强度的影响;在较高温度时读出层的磁化强度较小,退磁场能较小,在静磁耦合作用下,使GdFeCo读出层的磁化方向发生转变.制备的GdFeCo/AlN/TbFeCo静磁耦合多层薄膜适合作CAD-MSR记录介质.