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A novel model for lightly-doped-drain (LDD) MOSFETs is proposed, which utilizes the empirical hyperbolic tangent function to describe the I-V characteristics. The model includes the strong inversion and subthreshold mechanism, and shows a good prediction for submicron LDD MOSFET. Moreover, the model requires low computation time consumption and is suitable for design of MOSFETs devices and circuits. 相似文献
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Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs 下载免费PDF全文
We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors(HEMTs).A 200 W NH3/N2 remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration,which results in a decrease in sheet resistance and an increase in output current by 20-30%.Improved current slump,suppressed gate leakage current,and improved Schottk... 相似文献
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本文采用导模法生长技术,成功制备了高质量掺Si氧化镓(β-Ga2O3)单晶,掺杂浓度为2×1018 cm-3。晶体呈现淡蓝色,通过劳厄衍射、阴极荧光(CL)及拉曼测试对晶体的基本性质进行了表征,结果表明晶体质量良好。紫外透过光谱证明该晶体的禁带宽度约为4.71 eV。此外,在剥离衬底上,采用电子束蒸发、光刻和显影技术制备了垂直结构的肖特基二极管,平均击穿场强EAva为2.1 MV/cm,导通电阻3 mΩ·cm2,展示了优异性能。 相似文献
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Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump 下载免费PDF全文
The current slump of different recipes of SiN~ passivated AIGaN/GaN high electron mobility transistors (HEMTs) is investigated. The dc and pulsed current-voltage curves of AIGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH3 flow in the plasma-enhanced chemical vapor phase deposition process, which has impacted on the current collapse of SiNs passivated devices. We analyze the pulsed IDS -- VDS characteristics of different recipes of SiNx passivation devices for different combinations of gate and drain quiescent biases (VGso, VDSO) of (0, 0), (-6, 0), (-6, 15) and (0, 15)V. The possible mechanisms are the traps in SiNxpassivation capturing the electrons and the surface states at the SiNx/AIGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse. 相似文献
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Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment 下载免费PDF全文
Xinchuang Zhang 《中国物理 B》2022,31(5):57301-057301
The N2O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N2O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10-9 A/mm, high on/off current ratio of 108, and high fT×Lg of 13.44 GHz· μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics. 相似文献
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An approach based on depth-sensitive skew-angle x-ray diffraction (SAXRD) is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that (103) plane and (101) plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive (103)/(101) ω-scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach. 相似文献
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The influence of an N_2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor(HEMT) prepared by using a plasma-enhanced chemical vapor deposition(PECVD) system is presented.After the plasma treatment,the peak transconductance(g_m) increases from 209 mS/mm to 293 mS/mm.Moreover,it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device.From the analysis of frequency-dependent conductance,it can be seen that the trap state density(D_T) and time constant(τ_T) of the N20-treated device are smaller than those of a non-treated device.The results indicate that the N_2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device. 相似文献
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Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs 下载免费PDF全文
We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate dielectric under different negative gate stresses.The complex non-monotonic evolution of threshold voltage under the negative stress and during the recovery process is induced by the combination effect of two mechanisms.The effect of trapping behavior of interface state at SiN/AlGaN interface and the effect of zener traps in AlGaN barrier layer on the threshold voltage instability are opposite to each other.The threshold voltage shifts negatively under the negative stress due to the detrapping of the electrons at SiN/AlGaN interface,and shifts positively due to zener trapping in AlGaN barrier layer.As the stress is removed,the threshold voltage shifts positively for the retrapping of interface states and negatively for the thermal detrapping in AlGaN.However,it is the trapping behavior in the AlGaN rather than the interface state that results in the change of transconductance in the D-mode MIS-HEMT. 相似文献