钨掺杂BiVO4光阳极降解环丙沙星的表面态行为

采用简单浸渍的方法对BiVO₄光阳极进行表面钨(W)掺杂,以环丙沙星(CIP)为药品和个人护理产品(PPCPs)模型污染物,研究了W掺杂BiVO₄光阳极降解CIP的表面态行为。结果表明,低浓度W掺杂对BiVO₄光阳极的晶体结构、表面形貌和光吸收性能没有显著影响。但W掺杂取代了BiVO₄光阳极表面的V⁵⁺,能抑制BiVO₄光阳极表面V⁵⁺/V⁴⁺还原过程,减少复合中心表面态,同时引入更多氧空穴,增加活性位点表面态。CIP的降解反应受表面活性位点控制。表面W掺杂能有效促进CIP降解的电荷转移,提高BiVO₄光阳极光电催化降解性能。     

优氯净的分析测定新方法研究

本文利用优氯净对紫外光有吸收的特性,采用紫外分光光度法对优氯净的含量进行测定.实验考察了测定过程中可能存在的各种影响因素,证明此方法是一种简便的、高效可行的优氯净的分析方法.     

由正交表变换得到的2阶平衡的相关免疫函数

本本文给出了一种运用正交表变换来得到2阶相关免疫函数的特征矩阵的新方法,构造出10个不同的(8,4,2,2)特征矩阵,得到了几个相关结论。     

沉积温度对LaNiO3薄膜结构和性能的影响

采用磁控溅射法在(001)SrTiO3 基片上制备了LaNiO3氧化物薄膜,应用X射线衍射(XRD)、反射式高能电子衍射(RHEED)、原子力显微镜(AFM)、四探针测试仪等技术系统研究了沉积温度对LaNiO3薄膜结构和性能的影响.结果表明在较低的生长温度和较宽的温度范围内(250～400℃)都能得到外延LaNiO3薄膜.输运性质的测量结果表明在其它条件不变的情况下,250℃温度下生长的LaNiO3薄膜具有最高的电导率.     

水系钠离子电池的研究进展及实用化挑战

水系钠离子电池因其安全性高、成本低、环境友好等突出优势近些年来受到了广泛而深入的研究,在取得巨大进展的同时也逐步开始了产业化进程.但是与有机体系二次电池相比,水系钠离子电池仍然极大地受限于电解液较窄的电化学稳定窗口和电极材料较差的循环稳定性.迄今为止,如何解决上述问题依然是这一领域发展的关键.本综述主要概述了水系钠离子电池电极材料、电解液以及集流体的最新进展,分析了开发高性能水系钠离子电池的挑战和可能的解决策略,并进一步讨论了水系钠离子电池的发展前景.     

First-Principles Calculations of Atomic and Electronic Properties of T1 and In on Si（111）

The atomic and electronic structures of T1 and In on Si（111） surfaces are investigated using the firstprinciples total energy calculations. Total energy optimizations show that the energetically favored structure is 1/3 ML T1 adsorbed at the T4 sites on Si（111） surfaces. The adsorption energy difference of one T1 adatom between （√3 × √3） and （1 × 1） is less than that of each In adatom. The DOS indicates that TI 6p and Si 3p electrons play a very important role in the formation of the surface states. It is concluded that the bonding of TI adatoms on Si（111） surfaces is mainly polar covalent, which is weaker than that of In on Si（111）. So T1 atom is more easy to be migrated than In atom in the same external electric field and the structures of T1 on Si（111） is prone to switch between （√3 × √3） and （1 × 1）.     

Low-loss terahertz waveguide with InAs-graphene-SiC structure

We demonstrate a low-loss terahertz waveguide based on the InAs-graphene-SiC structure. By analyzing the terahertz waveguide proposed in this paper, we can obtain that it is the characteristic of a low transmission loss coefficient(αloss≈0.55 dB/m) for fundamental mode(LP01) when the incident frequency is larger than 3.0 THz. The critical radii of the inside and outside cylinders have been found for the high-quality transmission. The large inside radius and the high transmission frequency result in a flat transmission loss coefficient curve. As a strictly two-dimensional material, the double graphene surface rings perform better to improve the quality of transmission mode. These results provide a new idea for the research of the long-distance THz waveguide.     

Nitrogen Adatom Diffusion on a Ga－Rich GaN （0001） Surface

The diffusion of N adatoms on a Ga-rich GaN(O001) surface has been studied using density-functional theory.The configuration of Ga adatoms on a Ga-rich GaN surface has been identified. The first adlayer Ga adatoms are on top of the terminating substrate Ga atoms, and the outmost adlayer Ga adatoms exist randomly at the T4 or H3 sites. A very different diffusivity of N adatoms on a Ga-rich GaN(0001) surface has been found. The excess Ga adatoms on a GaN(0001) surface reduce the diffusion barrier by 0.75eV and influence the migration path. It seems that bilayer Ga adatoms are helpful for N atom diffusion.     

十六行三列不同结构的比较

本文通过计算机验证，给出了十六行三列不同结构的正交设计与均匀设计的极大最小距离和平均冒尖性的比较结果。