水系钠离子电池的研究进展及实用化挑战

水系钠离子电池因其安全性高、成本低、环境友好等突出优势近些年来受到了广泛而深入的研究,在取得巨大进展的同时也逐步开始了产业化进程.但是与有机体系二次电池相比,水系钠离子电池仍然极大地受限于电解液较窄的电化学稳定窗口和电极材料较差的循环稳定性.迄今为止,如何解决上述问题依然是这一领域发展的关键.本综述主要概述了水系钠离子...     

聚乙烯醇硫酸钾水凝胶电机械化学行为研究

通过将交联聚乙烯醇硫酸酯化的方法制备了一种新型电刺激响应性聚乙烯醇硫酸钾(PVSK)智能水凝胶,并探讨了溶液离子强度和pH对PVSK水凝胶的溶胀吸水率、机械性能以及电机械化学行为的影响.结果表明,制备的PVSK水凝胶的平衡溶胀比随NaCl溶液离子强度的增大而减小,在pH2.39～10.83范围内基本不受溶液pH的影响;经不同离子强度和pH的NaCl溶液充分溶胀的PVSK水凝胶具有良好的机械性能,在非接触的直流电场作用下,该水凝胶向电场负极弯曲,凝胶的弯曲速度和弯曲偏转量随外加电场强度的增加而增大,随NaCl溶液离子强度的增大出现临界最大值,但不随溶液pH(2.08～10.53)的改变而改变;在循环电场作用下,PVSK水凝胶的电机械化学行为具有良好的可逆性.     

DSB显著提高羧酸盐驱油体系抗钙镁离子能力的研究

测定了工业品级的天然混合长链烷基羧酸盐(SDC)以及与3-(N,N-二甲基十二烷基胺)-2-羟基-丙磺酸(DSB)复配驱油体系的界面张力(ITFmin), 分别得出其抗钙镁离子的能力为400和5000 mg/L. 选择试剂级十二烷基羧酸钠与DSB复配, 测定了不同配比溶液的表面张力值和临界胶束浓度cmc, 结合长链烷基脂肪酸与钙离子的溶度积Ksp, 分析了对不溶性长链烷基羧酸盐形成的影响. 根据现场驱油体系配方, 计算了两者在溶液中的摩尔配比为4:1时的十二烷基羧酸盐在胶束中的摩尔分数xm1为0.51, 相互作用参数βm值为-3.11, 反映了两者有较强的相互作用. 采用量子化学方法, 对由1个十二烷基羧酸分子、1个DSB分子及1个二价钙离子组成的模型复合物进行了能量计算和电荷分布计算, 得出在长链烷基羧酸盐和DSB两者混合胶束的界面层中存在负电荷空穴, 提出二价金属离子被络合的模型, 合理地解释了实验事实.     

High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF(radio frequency)output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.     

不同中心波长飞秒脉冲激发InAs表面辐射太赫兹波的机理研究

研究了p型(100)InAs在不同中心波长飞秒激发光(750—850nm)作用下的太赫兹(THz)波辐射特性.这种太赫兹辐射的光谱性质与光学Dember效应密切相关，飞秒脉冲激发下产生的载流子在InAs表面的Dember场内做加速运动，从而辐射出THz电磁波.实验结果表明：不同中心波长的激发光作用下，InAs表面产生的Dember电场、光生载流子浓度、谷间散射效应以及处于不同状态的载流子数目都发生了变化，因而激发出太赫兹波的功率、振幅、频谱分布和有效谱宽是不同的.这项研究将有利于THz时域光谱技术以及实验     

剪切形变下掺杂及缺陷对MoS2电子结构的影响

本文利用密度泛函理论,研究剪切形变下掺杂改性及不同类型缺陷对MoS2电子结构的影响。发现：剪切形变下,MoS2+P体系为相对最稳定的结构,掺杂改性相较于缺陷对模型稳定性影响更小;模型MoS2+P+Se中P-Mo键易形成共价键,而其中的Se-Mo键和MoS2+P-Mo-S模型中的P-Mo键,易形成离子键;掺杂使MoS2模型能隙变大,而缺陷使能隙减小,且S和Mo原子共缺陷的模型带隙为0;缺陷相较于掺杂改性模型,更能使Mo原子周围增加电荷聚集度,带隙值更低,更能影响或调控模型的电子结构。     

Electronic and optical properties of 3N-doped graphdiyne/MoS2 heterostructures tuned by biaxial strain and external electric field

The construction of van der Waals (vdW) heterostructures by stacking different two-dimensional layered materials have been recognised as an effective strategy to obtain the desired properties. The 3N-doped graphdiyne (N-GY) has been successfully synthesized in the laboratory. It could be assembled into a supercapacitor and can be used for tensile energy storage. However, the flat band and wide forbidden bands could hinder its application of N-GY layer in optoelectronic and nanoelectronic devices. In order to extend the application of N-GY layer in electronic devices, MoS₂ was selected to construct an N-GY/MoS₂ heterostructure due to its good electronic and optical properties. The N-GY/MoS₂ heterostructure has an optical absorption range from the visible to ultraviolet with a absorption coefficient of 10⁵ cm^-1. The N-GY/MoS₂ heterostructure exhibits a type-Ⅱ band alignment allows the electron-hole to be located on N-GY and MoS₂ respectively, which can further reduce the electron-hole complexation to increase exciton lifetime. The power conversion efficiency of N-GY/MoS₂ heterostructure is up to 17.77%, indicating it is a promising candidate material for solar cells. In addition, the external electric field and biaxial strain could effectively tune the electronic structure. Our results provide a theoretical support for the design and application of N-GY/MoS₂ vdW heterostructures in semiconductor sensors and photovoltaic devices.     

新题征展(69)

A 题组新编 1.已知ABCD为空间四边形,分别求下列情况下两对角线AC、BD所成的角: