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Flexible Cu(In,Ga)Se2 Thin-Film Solar Cells on Polyimide Substrate by Low-Temperature Deposition Process 下载免费PDF全文
The electrical and structural properties of polycrystalline Cu(In, Ga)Se2 films grown on polyimide (PI) substrates below 400℃ via one-stage and three-stage co-evaporation process have been investigated by x-ray diffraction spectra (XRD), scanning electron microscopy (SEM) and Hall effect measurement. As shown by XRD spectra, the stoichiometric CIGS films obtained by one-stage process exhibit the characteristic diffraction peaks of the (In0.68Ga0.32)2Se3 and Cu(In0.7Ga0.3)2Se. It is also found that the film structures indicate more columnar and compact than the three-stage process films from SEM images. The stoichiometric CIGS films obtained by three-stage process exhibit the coexistence of the secondary phase of (In0.68Ga0.32)2Se3, Cu2-xSe and Cu(In0.7Ga0.3)2Se. High net carrier concentration and sheet conductivity are also observed for this kind of film, related to the presence of Cu2-xSe phase. As a result, when the CIGS film growth temperature is below 400℃, the three-stage process is inefficient for solar cells. By using the one-stage co-evaporation process, the flexible CIGS solar cell on a PI substrate with the best conversion efficiency of 6.38% is demonstrated (active area 0.16cm^2). 相似文献
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对比分析了R452B、R32和R410A应用于空调(热泵)机组理论循环特性,并对R452B在空调(热泵)机组中直接替代R410A的性能进行了试验研究,测试了空调(热泵)机组在不同工况条件下的制冷/热量、功率、性能系数以及压缩机的排气温度等参数。结果表明:相较于使用R410A而言,机组使用R452B的制冷/热能力、功率略有下降,制冷能效提高在5%以内,压缩机的排气温度提高约1℃,压比有所降低。当R452B的充注量达到R410A的85%时,机组性能达到最佳。总体来讲,R452B与R410A的运行性能相近。R452B比R410A具有更低的GWP值,符合行业的制冷剂替代趋势,可以在空调(热泵)机组中作为R410A的直接替代制冷剂。 相似文献
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Dynamic scaling and optical properties of Zn(S,O, OH) thin film grown by chemical bath deposition 下载免费PDF全文
The scaling behavior and optical properties of Zn(S, O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements, scanning electron microscopy and optical properties measurement. From the scaling behaviour, the value of growth scaling exponent β , 0.38±0.06, was determined. This value indicated that the Zn(S, O, OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect. Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions. The energy band gap of the film deposited with 40 min was around 3.63 eV. 相似文献
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中频溅射制备ZnO薄膜可改善射频磁控溅射方式中沉积速率过慢的缺点.对于多层薄膜的制备,对向靶的设计可使样品避开等离子体直接轰击,减少基底薄膜的损伤.本文采用这项技术制备厚度约为50nm的ZnO薄膜,通过调整工作压强、溅射功率、氧氩比等工艺条件,制备出均匀致密,结晶质量高,电阻率在102~103Ω·cm之间,可见光区透过率达到90;的ZnO薄膜.将其应用到CIGS太阳电池中发现,具有50nm厚度的ZnO层的CIGS太阳电池的性能较无ZnO层的太阳电池都有了很大提高. 相似文献
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本工作通过各种途径合成了二十多个各种类型的烯丙硅化合物,研究了它们烯丙位氧化及转化为β-硅基-α,β-不饱合羰基化合物的途径。试验的氧化剂有金属催化过氧化物体系,铬酥吡啶络合物(Collin's试剂),NBS氧气,单线态氧,氧化硒等。 相似文献
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合成了二齿配体二苯并咪唑丙烷(tbz), 对该配体进行了元素分析、紫外和红外表征;采用X-射线衍射方法测定了该配体高氯酸盐的晶体结构, 晶体学参数如下: C17H17N4O4Cl, Mr = 376.80, a = 0.8486(3), b = 1.3766(4), c = 1.4893(4) nm, b = 103.153(6), V = 1.6940(11) nm3, Dc = 1.477 g/cm3, Z = 4, F(000) =784, m = 0.258 mm-1,空间群为P21/n。文章讨论了二苯并咪唑丙烷(tbz)、质子化二苯并咪唑丙烷及配体tbz在配合物中的构象变化, 运用G98程序对二苯并咪唑丙烷(tbz)及其质子化的二苯并咪唑丙烷分别进行了量子化学计算。 相似文献
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