嵌入无限大弹性板中圆板的热屈曲分析

分析了嵌入无限大弹性板中的圆板在变温时的热屈曲问题。由于圆板的热膨胀系数与无限大弹性板的热膨胀系数不同,温度变化时圆板中会产生压应力。当压应力达到其临界值时,圆板会发生热屈曲。首先,基于弹性力学平面应力问题的基本理论,得到圆板和无限大弹性板的应力和位移;然后建立圆板热屈曲的控制微分方程,求得临界屈曲温度的解析解和数值解,着重讨论圆板和无限大弹性板的材料物性参数的关系对圆板临界屈曲温度的影响。     

中频对向靶磁控溅射制备超薄ZnO薄膜及其在太阳电池中的应用

中频溅射制备ZnO薄膜可改善射频磁控溅射方式中沉积速率过慢的缺点.对于多层薄膜的制备,对向靶的设计可使样品避开等离子体直接轰击,减少基底薄膜的损伤.本文采用这项技术制备厚度约为50nm的ZnO薄膜,通过调整工作压强、溅射功率、氧氩比等工艺条件,制备出均匀致密,结晶质量高,电阻率在102～103Ω·cm之间,可见光区透过率达到90;的ZnO薄膜.将其应用到CIGS太阳电池中发现,具有50nm厚度的ZnO层的CIGS太阳电池的性能较无ZnO层的太阳电池都有了很大提高.     

RF-PECVD制备微晶硅薄膜的X射线衍射研究

采用X射线衍射(XRD)技术连续扫描法和薄膜衍射法对RF-PECVD制备的微晶硅薄膜结构进行了研究.改变硅烷浓度和反应功率,控制薄膜的生长速率,已达到制备不同材料的目的.根据硅基薄膜的电学特性和XRD测试,随着反应功率的增加,硅基薄膜的生长速率不断提高,微晶硅薄膜的晶化程度不断增大.     

Cu(In,Ga)Se_2薄膜表面镓(Ga)含量分布对太阳电池性能的影响

本文利用三步法共蒸发制备Cu(In,Ga)Se_2多晶薄膜吸收层,通过改变第三步Ga的蒸发温度控制薄膜表面Ga的含量及其分布.随着吸收层表面Ga含量的增大,空间电荷区带隙变宽,电池的开路电压V_(oc)明显增大.同时,Ga的梯度分布有效地扩宽了吸收层的光谱响应范围,减小了由于禁带宽度增大所引起的短路电流J_(sc)的损失,从而有效地提高了电池的转换效率.     

Dynamic scaling and optical properties of Zn（S,O, OH） thin film grown by chemical bath deposition

The scaling behavior and optical properties of Zn(S, O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements, scanning electron microscopy and optical properties measurement. From the scaling behaviour, the value of growth scaling exponent β , 0.38±0.06, was determined. This value indicated that the Zn(S, O, OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect. Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions. The energy band gap of the film deposited with 40 min was around 3.63 eV.     

R452B应用于空调(热泵)机组的性能研究

对比分析了R452B、R32和R410A应用于空调(热泵)机组理论循环特性,并对R452B在空调(热泵)机组中直接替代R410A的性能进行了试验研究,测试了空调(热泵)机组在不同工况条件下的制冷/热量、功率、性能系数以及压缩机的排气温度等参数。结果表明:相较于使用R410A而言,机组使用R452B的制冷/热能力、功率略有下降,制冷能效提高在5%以内,压缩机的排气温度提高约1℃,压比有所降低。当R452B的充注量达到R410A的85%时,机组性能达到最佳。总体来讲,R452B与R410A的运行性能相近。R452B比R410A具有更低的GWP值,符合行业的制冷剂替代趋势,可以在空调(热泵)机组中作为R410A的直接替代制冷剂。     

CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures

The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 （CIS） films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu（In,Ga）Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.     

Analysis of average capacity for free-space optical links with pointing errors over gamma-gamma turbulence channels

<正>A novel closed-form expression for average capacity is derived for free-space optical(FSO) links over Gamma-Gamma turbulence channels by considering the effect of misalignment(pointing errors).The simulation results show that the average capacity of the FSO links can be analyzed with the effects of atmospheric turbulence condition,beam width,detector size,jitter variable,and transmitted optical power. Meanwhile,the results are further provided to verify the accuracy of our mathematical analysis.This work is useful for the FSO designer.     

不同成分比例CIGS薄膜及太阳电池的快速退火

研究了110~180 ℃(2 min)下的快速热退火对Cu(In,Ga)Se2(CIGS)薄膜特性及CIGS太阳电池性能的影响.结果表明:对于不同成分比例的CIGS(正常、富Cu、高Ga)电池来说,150 ℃,2 min的快速退火最利于电池性能及二极管特性的增加.其中,退火对富Cu电池的开路电压Voc改善最大,这是因为快速热退火对消除部分CIGS薄膜中的CuSex有积极作用,从薄膜的电阻率有少量提高,器件的短路电流Jsc有少量下降可以得到验证;而对于高Ga电池来说,填充因子FF的改善最大,这是因为高Ga样品的缺陷较多,退火会消除薄膜内部的部分缺陷,从而薄膜的迁移率及Jsc都有所提高,使得FF有较大的增加.     

电沉积Cu-In-Ga金属预制层的硒硫化研究

以H₂S气体作为硫源、固态蒸发硒蒸气作为硒源对电沉积Cu-In-Ga金属预制层进行硒硫化处理. 通过电沉积Cu-In-Ga金属预制层在不同衬底温度下硒化、硫化和硒硫化的对比实验,发现CuInS₂相和CuIn（S,Se）₂相优先生成,抑制了CuInSe₂相的生成,促使InSe相薄膜向内部扩散,减弱了薄膜两相分离现象. 采用先硒化后硒硫化处理工艺优化了Cu（In,Ga）（S,Se）₂薄膜的制备工艺,在250 ℃预硒化得到了开路电压为570 mV的太阳电池,在更高的预硒化温度得到了较大短路电流的太阳电池,最终优化得到了效率达到10.4%的电池器件. 关键词： 电化学沉积 Cu-In-Ga金属预制层 硒硫化处理 2薄膜')" href="#">Cu(In,Ga)(S,Se)₂薄膜