排序方式: 共有85条查询结果,搜索用时 484 毫秒
51.
在酸性水溶液中,分别在金属Ga和Cu/In衬底上进行了Ga电沉积的研究。用循环伏安法研究了导电盐、pH值对电沉积Ga的影响。系统研究了Ga的沉积过程,发现Ga会逐渐向薄膜内部扩散,在Cu/In界面上与CuIn合金反应生成CuGa2合金。针对Cu/In薄膜和Ga薄膜是活泼金属的特点,在溶液中加入三乙醇胺有效地保护了Cu/In薄膜和Ga金属薄膜不被氧化,并且提高了Ga沉积的电流效率。在Cu/In薄膜上制备出了均匀光亮的金属Ga薄膜。对电沉积出Cu-In-Ga预置层进行了硒化处理,得到了质量较好的Cu(In1-xGax)Se2(CIGS)薄膜,并制备了太阳电池。电池效率达到了9.42%。 相似文献
52.
53.
54.
55.
CIGS thin films are deposited by sputtering and selenization. The synthesis
of semiconducting polycrystalline thin films and characteristics of devices
based on the CIGS absorbing layers are investigated. Their microstructures
are characterized by x-ray diffraction and Raman spectroscopy. The results
reveal that there exist metallic Cu2-xSe compounds in CIGS
film surfaces and the compounds are thought to be responsible for the
degradation of the open circuit voltage of solar cells. The optimization of
selenization temperature profile and copper content in the precursor
surfaces is studied, concluding that the conversion efficiency may be
improved by removing metallic Cu2-xSe compounds from the surfaces of
CIGS thin films. 相似文献
57.
Flexible Cu(In,Ga)Se2 Thin-Film Solar Cells on Polyimide Substrate by Low-Temperature Deposition Process
下载免费PDF全文
![点击此处可从《中国物理快报》网站下载免费的PDF全文](/ch/ext_images/free.gif)
The electrical and structural properties of polycrystalline Cu(In, Ga)Se2 films grown on polyimide (PI) substrates below 400℃ via one-stage and three-stage co-evaporation process have been investigated by x-ray diffraction spectra (XRD), scanning electron microscopy (SEM) and Hall effect measurement. As shown by XRD spectra, the stoichiometric CIGS films obtained by one-stage process exhibit the characteristic diffraction peaks of the (In0.68Ga0.32)2Se3 and Cu(In0.7Ga0.3)2Se. It is also found that the film structures indicate more columnar and compact than the three-stage process films from SEM images. The stoichiometric CIGS films obtained by three-stage process exhibit the coexistence of the secondary phase of (In0.68Ga0.32)2Se3, Cu2-xSe and Cu(In0.7Ga0.3)2Se. High net carrier concentration and sheet conductivity are also observed for this kind of film, related to the presence of Cu2-xSe phase. As a result, when the CIGS film growth temperature is below 400℃, the three-stage process is inefficient for solar cells. By using the one-stage co-evaporation process, the flexible CIGS solar cell on a PI substrate with the best conversion efficiency of 6.38% is demonstrated (active area 0.16cm^2). 相似文献
58.
Cu(In,Ga)Se2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition
下载免费PDF全文
![点击此处可从《中国物理快报》网站下载免费的PDF全文](/ch/ext_images/free.gif)
The structural and electrical properties of Cu(In,Ga)Se2 (CIGS) films grown on polyimide (PI) sheet using the three-stage co-evaporation process are investigated by x-ray diffraction spectra (XRD), scanning electron microscopy (SEM), Raman spectra, and Hall effect measurements, respectively. The results show that the properties of CIGS films on PI sheet are strongly dependent on the compositional ratio of Cu/(In+Oa) (Cu/Ⅲ). In contrast to the non-stoichiometric CIGS films, stoichiometric CIGS films show better structural and electrical properties, such as a relatively larger grain size, lower resistivity and higher carrier concentration. The flexible CIGS solar cells on PI sheet with the conversion efficiencies of 9.7% and 6.6% are demonstrated for the CIGS absorber layer with Cu/Ⅲ of 0.96 and 0.76, respectively (active area, 0.20cm^2). The cell efficiency for Cu-poor CIGS films is limited by a relatively lower open circuit voltage and fill factor. 相似文献
59.
60.
无镉材料Zn(O,S)因其带隙宽且可调节、无毒无害等优点被作为缓冲层材料重点研究,通过化学水浴法制备Zn(O,S)薄膜,研究了沉积时间的不同(20~35 min)对Zn(O,S)薄膜的成分、结构特性、光学性能及形貌的影响.通过XRD测试可知,水浴法制备的Zn(O,S)薄膜为非晶态.通过透反射谱测试可知,薄膜的光学透过率较高(>80;).通过表面形貌测试可知,30 min时Zn(O,S)薄膜为致密均匀的小颗粒.将Zn(O,S)薄膜应用在CZTSe电池中,在30 min时获得较高器件转换效率5.37;. 相似文献