对流扩散方程的一种新型差分格式

对流扩散方程可以描述众多的物理化学现象，因而对其寻求稳定的，实用的数值解法有着重要的现实意义。本文针对形式较一般的一维非定常对流扩散方程，构造了对角元严格占优的Crank-Nicholson差分格式，然后对其分别用分离变量的方法以及能量估计的方法作了稳定性的分析，最后给出了数值试验的结果，数值结果表明本文构造的格式能够较好的处理经典的Crank-Nicholson格式所不能处理的对流项系数较大的对流扩散方程，并具有较好的精度。     

激光雷达中层大气遥感技术

介绍了中科院武汉物理与数学研究所瑞利激光雷达的技术特点，并从其对武汉地区中层大气密度和温度廓线探测的典型结果，给出了该激光雷达对中层大气主要参数的探测能力。     

三苯甲基自由基及其二聚体稳定性的理论研究

采用量子化学AM1 MO方法优化了三苯甲基自由基及其两种二聚体的构型，并计算了反应物和二聚物的生成焓、活化能以及它们的电荷布居，计算结果表明，三苯甲基自由基是一种较稳定的自由基，在这个自由基中存在明显的共轭效应，分子中电子云呈平均化分布．它的二聚体1，4—环己二烯衍生物分子中的5个苯基排布在环己二烯环平面的两端，明显降低了苯基之间的空间排斥力，使二聚物—环己二烯衍生物分子的稳定性大大高于六苯乙烷．因此，三苯甲基自由基的二聚体是1，4—环己二烯衍生物而不是六苯基乙烷，得到了与实验事实一致的结果。     

Zn(BTZ)2白色有机电致发光材料的合成及其器件制备

以PCl₃为脱水剂,将邻氨基硫酚与水杨酸脱水环化合成出2-(2-羟基苯基)苯并噻唑,并进一步将所得产物与乙酸锌反应合成出2-(2-羟基苯基)苯并噻唑螯合锌(Zn(BTZ)₂)材料。以该配合物作为发光层制备出结构为ITO/PVK:TPD/Zn(BTZ)₂/Al近白色电致发光器件,其色坐标位于白场之内(x=0.242,y=0.359),在驱动电压为16V时,亮度达3200cdm²,对应的量子效率为0.32%。进一步在Zn(BTZ)₂中掺入橙红色染料Rubrene,制成ITO/PVK:TPD/Zn(BTZ)₂:Rubrene/Al结构器件,实现了纯白色发光(色坐标值:x=0.324,y=0.343),非常接近于白色等能点,且量子效率达0.47%。最后对上述器件的发光和电学性能进行了深入的研究和探讨。     

利用爆磁压缩发生器产生高功率脉冲高电压

 爆磁压缩发生器产生脉冲高电压技术可以用于产生高功率微波及强电磁脉冲的实验研究。给出了利用螺旋型爆磁压缩发生器（HEMG）驱动电爆炸丝功率调节系统产生高功率脉冲高电压的实验方法和主要的结果。在利用HEMG驱动电爆炸丝断路开关（EEOS）产生脉冲高电压实验中，获得了最高电压700~800kV,功率大于20GW的脉冲输出。     

Viscosity Characteristic in Metallic Melts with Medium／Short-Range Order Structures

Viscosities and liquid structure of alloys Cu75Al25, Cu87Sn13 and Al-12.5%Si and pure metals Cu and Sn are investigated by using torsional oscillation viscometry and high temperature x-ray diffractometry. The viscosities of pure metals and eutectic alloy melts along with the short-range order structure are found to follow the Arrhenius law in a wide range of temperature above the liquidus. The breakpoints in Arrhenius plots emerge when the structures of alloy melts are transformed from the medium-range order structure to the short-range order structure. It has been found that the change of the viscosity of the metallic alloys is a characteristic of microstructure transformation in the related melts.     

溴分子[^2Π3／2]4d里德堡态的转动谱的计算模拟

对溴分子在６８８００－７２００ｃｍ＾－１范围内的两个被观察到的［＾２Π３／２］４ｄ偶宇称里堡态的转动光谱进行了计算模拟，确定了转动常数，并且证实了原先对实验光谱的传动结构和电子角动量的标识。     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.