分子筛合成中六亚甲基亚胺与环己胺二元胺的模板作用

 以固体硅胶为硅源考察了六亚甲基亚胺(HMI)和环己胺(CHA)二元胺模板剂对分子筛合成产物的影响. XRD测试结果表明,当晶化温度为160 ℃,晶化时间为84 h, SiO2/Al2O3摩尔比为30, Na2O∶H2O∶(HMI+CHA)∶SiO2摩尔比为0.11∶45∶0.35∶1时,即使HMI仅占二元胺模板剂的25%(摩尔分数),所得分子筛仍为MCM-22; 其它条件相同时,以单纯CHA为模板剂得到的是ZSM-35分子筛. 用13C MAS NMR研究了HMI和CHA的状态,结果表明在单一HMI合成体系中,HMI既起MCM-22结构导向作用,又经质子化后起稳定骨架的作用; 而在HMI和CHA二元胺体系中,HMI主要起结构导向作用,CHA则填充在MCM-22层间十元环中稳定骨架.     

双极性半导体钝化膜空间电荷电容分析(II)

将双极性半导体钝化膜空间电荷电容等效为钝化膜/溶液界面处电容和内层钝化膜/外层钝化膜界面处的np结电容的串联, 根据前期研究建立的半导体富集态、耗尽态以及反型态空间电荷电容的统一计算公式, 给出了双极性钝化膜Mott-Schottky(M-S)曲线的非线性拟合方法. 并将这一方法应用于镍基合金G3高温高压H2S/CO2腐蚀后的钝化膜半导体特征研究. M-S曲线非线性拟合结果显示, 温度升高外层p型半导体钝化膜多数载流子浓度明显增高, 而内层n型半导体钝化膜的多数载流子浓度基本未变. 通过非线性拟合, 证明本文所给出的M-S曲线非线性拟合方法能够同时给出钝化膜内外层多个半导体性质参数,为揭示钝化膜形成及破坏机制提供更多信息. 结合X射线光电子能谱(XPS)分析, 讨论了钝化膜结构变化机制及np结在抑制腐蚀过程中的作用.     

探究实验中学生学业评价的实践探索

1 问题的提出 传统化学实验教学存在的一些问题,主要表现在以下几个方面.     

非线性薛定谔-麦克斯韦方程基态解的存在性

对V,K和f作出一些假设,用山路定理得出如下的薛定谔-麦克斯韦方程基态解:{-Δu+V(x)u+K(x)φu=f(x,u), in R~3,-Δφ=K(x)u~2,in R~3.(*)     

Effects of information asymmetry on cooperation in the prisoners’ dilemma game

Effects of information asymmetry on cooperation in the prisoners’ dilemma game are investigated. The amplitude A is introduced to describe the degree of information asymmetry. It is found that there exists an optimal value of amplitude Aopt at which the fraction of cooperation reaches its maximal value. The reason lies in that cooperators on the two-dimensional grid form large clusters at Aopt . In addition, the theoretical analysis in terms of the meanfield theory is used to understand this kind of phenomenon. It is confirmed that the information asymmetry plays an important role in the dynamics of the dilemma games of spatial prisoners.     

τ质量测量方案的Monte Carlo研究

在τ质量实验测量之前对多种测量方案进行了细致的Monte Carlo研究,并进行了比较.确定τ质量测量实验采用最大似然法,并给出可能的测量精度.研究了包括探测效率、束流能散等诸多因素对实验的影响,同时对实验的实现提出要求.     

外加电场对掺杂KNSBN晶体空间电荷场的影响

利用掺铈KNSBN晶体,在633nm下观察和测试了外加电场对晶体内部空间电荷场的基频和高阶分量的记录和擦除特性的影响,并对所得实验结果进行了分析。 关键词：     

Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

In GaN-based green light-emitting diodes(LEDs) with and without Mg-preflow before the growth of p-Al GaN electron blocking layer(EBL) are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic temperatures.However,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room temperature.Our conclusions are drawn such that the efficiency decline is probably the result of different emission positions.Higher Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the(8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to p-GaN.Within this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.     

再制造系统外部竞争要素的作用与委托代理机制

在再制造系统中引入了外部竞争因素,构建了一个三产品竞争系统.在内、外部竞争的条件下,分别给出了均衡解,研究了OEM实施再制造和外部竞争者进入的决策边界条件,设计了委托代理合作契约.研究表明:在单竞争因素的情况下,内部竞争不能产生充分的阻力,以阻止竞争者进入；双竞争因素下,内部竞争没有产生更大的阻力,外部竞争使OEM的再制造策略变得更加困难,这迫使OEM选择委托代理合作机制,其转移支付依赖于:规模经济,机会成本和竞争者产品竞争力.     

线性谐振子的非定态波函数

引入初坐标算符和初动量算符为线性谐振子的力学量完全集，求解薛定谔方程，可得到线性谐振子的两类非定态波函数。