Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.     

PIV Measurements and Mechanisms of Adjacent Synthetic Jets Interactions

Interactions of adjacent synthetic jet actuators with varying relative amplitude and the relative phase of driving voltage are measured using a particle image velocimetry （PIV）. Varying relative amplitude or relative phase of driving voltage of the adjacent actuators vectors the direction of the ensuing merged jet of the adjacent synthetic jets. The vectoring mechanism of the adjacent vortex pairs, attract-impact causing deflection （AICD）, is provided to explain why the merged jet is generally vectored to the side of the phase-leading synthetic jet or the synthetic jet with higher driving voltage.     

基于机器视觉的移动工件抓取和装配的研究

针对工业生产线上某产品上下盖自动装配的问题,运用运动控制理论与机器视觉相结合,搭建了一套模拟工业生产线产品装配系统。首先利用工业相机对进入视场的工件进行单帧图像采集,获取图像数据;然后利用OpenCV对数字图像进行处理,包括中值滤波、阈值分割、孔洞填充、边缘提取来获取数字图像的特征;之后通过质心法结合矩形拟合计算出工件的质心坐标和偏转角度;最后引导六轴机械臂抓取产品的时候能根据图像处理结果进行纠偏和补偿。该系统采用平面棋盘格标定板对工业相机进行了标定,并且在线进行了验证,实验结果表明,工件抓取和装配成功率为100%,满足工业现场的装配精度要求。     

基于多摄像机的航空器滑行冲突检测研究

对机场场面航空器滑行冲突检测进行了研究,分析了基于多摄像机的航空器滑行冲突检测流程,基于图像识别和目标跟踪技术,提取航空器的滑行轨迹,提出了基于DCPA(distance of closest point of approach)和TCPA(time of closet point of approach)的滑行冲突检测模型,开发了基于多摄像机的航空器滑行冲突检测原型系统并应用于西南某通航机场;实验结果表明,基于多摄像机视频目标跟踪和冲突检测模型可有效地检测机场场面航空器的滑行冲突,可作为中小机场主要监视手段以及大型机场场监雷达系统的辅助,防止航空器机场滑行冲突,提高机场场面运行安全和效率。     

半导体中的自旋弛豫--从体材料到量子阱、量子线、量子点

本文对半导体中的自旋弛豫过程给出一个简要的回顾,介绍了半导体材料从体材料到量子阱、量子线、量子点不同维数的结构中各种自旋弛豫过程,主要关注了自旋去相位和相干控制。对于不同材料中的各种弛豫机制,关注的重点在于如何能够在实验上以一种可以控制的方式来改变可调参数从而达到控制自旋弛豫过程。这些参数主要有电场、磁场、温度、应变、有效g因子等等。本文的组织上,首先介绍研究前景,第1部分简要介绍了自旋弛豫的四种机制。第2部分按照维数的不同将半导体中自旋弛豫分为3个部分:体材料、量子阱、量子线、量子点,在每一部分中又基本上按照电子、空穴、激子的顺序进行了简要的总结:对于不同的载流子,考虑了自旋弛豫对可调参数的依赖关系。这些结果要么试图解释了已有的实验结果,要么从理论上给出预言从而给实验指明了方向,为室温下可以使用的自旋电子学器件设计提供了依据,为固态量子计算和量子信息处理铺平了道路。最后简单地给出展望。     

Controlled Bidirectional Quantum Direct Communication by Using a GHZ State

A controlled bidirectional quantum secret direct communication scheme is proposed by using a Greenberger- Horne-Zeilinger （GHZ） state. In the scheme, two users can exchange their secret messages simultaneously with a set of devices under the control of a third party. The security of the scheme is analysed and confirmed.     

高稳定电化学扫描隧道显微镜研制

展示了一台自制的电化学扫描隧道显微镜. 这台电化学STM具有很高的稳定性,它在XY平面和Z方向的漂移速率分别为每分钟67和55.6 pm/min. 另外,特殊设计的扫描管部件有效地避免了在高湿度的环境中大漏电电流的产生. 详细描述了这台电化学STM的机械结构.通过在硫酸铜溶液中测量STM图像证明这套系统的优异性能,得到了大范围干净有序的Au(111)表面和高分辨的高聚石墨原子图像.     

Improvement of Security of Three-Party Quantum Secure Direct Communication Based on GHZ States

A protocol for three-party quantum secure direct communication based on Greenberger-Horne-Zeilinger （GHZ） states was recently proposed by 3in et al. [Phys. Lett. A 354 （2006） 67] By analysing the protocol we find some security loopholes, e.g. one bit of secret messages of a party （Alice in the original paper） can always be leaked straight to the public without any eavesdropping. These problems suggested previously are discussed and possible solutions are presented to improve the security of the original protocol.     

FIRST-PRINCIPLE SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF THE ELECTRONIC STRUCTURES OF SHORT-PERIOD (GaAs)m(AlAs)n SUPERLATT1CES

With the local density approximation, the band structares of the short-period (GaAs)₁(AlAs)₁ and (GaAs)₂(AlAs)₁ superlattices are calculated by using the first-principle self-consistent pseudopotential method. The results show that the (GaAs)₁(AlAs)₁ superlattice is an indirect semiconductor, and the lowest conduction band state is at point R in the Brillouin zone; the (GaAs)₂(AlAs)₁ superlattice is a direct semiconductor and the lowest conduction band state is at point Γ. The squared matrix elements of transition are calculated. The pressure coefficients of energy gaps of the (GaAs)₁(AlAs)₁ and (GaAs)₂(AlAs)₁ superlattices are calculated and compared with those obtained by hydrostatic pressure experiments.     

激光偏振参量对光场感生电离电子碰撞机制等离子体电离参量的影响

以基于光场感生电离电子碰撞机制的类钯氙系统为例，计算并讨论了不同抽运激光偏振对等离子体的电离速率、阈值激光强度、电子在激光场中的剩余能量、各电荷态相对集居数、初始电子能量分布等电离参量的影响，计算结果表明，在相同的激光功率密度下，激光偏振对类钯氙41.8nm4d^95d^1S0-4d^95p^1P1跃迁的X射线激光放大影响很大，圆偏振激光抽运更有利于类钯氙41.8nm4d^95d^1S0-4d^95p^1P1跃迁的X射线激光放大的实现。