Shrinking device realized by using layered structures of homogeneous isotropic materials

We propose the practical realization of a shrinking device by using layered structures of homogeneous isotropic materials.By mimicking the shrinking device with concentric alternating thin layers of isotropic dielectrics,the permittivity and the permeability in each isotropic layer can be properly determined from the effective medium theory in order to achieve the shrinking effect.The device realized by multilayer coating with dielectrics is validated by TE wave simulation,and good shrinking performance is demonstrated with only a few layers of homogeneous isotropic materials.     

附加电极对扫描变像管性能的优化

 通过分析影响变像管性能的主要因素,以提高其时间分辨率、空间分辨率和动态范围为优化思路,确定了在扫描变像管中荧光屏邻近区域引入等径螺旋电极以产生纵向均匀加速场的优化方案。分析得知,该优化结构可以在几方面改善变像管的性能:增加粒子到达荧光屏的纵向速度、减小粒子通过偏转板与荧光屏之间区域的渡越时间和渡越时间弥散、提高荧光屏的亮度。在横向约束带电粒子束的发散,通过减小空间电荷像差而改善电子光学系统的空间分辨率。另外,附加电极的引入也为降低加速阳极电位和偏转电极电位从而提高偏转系统的灵敏度提供了一定的空间。     

光照法在玻璃基底上原位生长金纳米结构及其光谱性质

 以硅烷化后吸附粒径小于10 nm的金种子的玻璃片为基底,聚乙烯吡咯烷酮为还原剂,在荧光灯照射条件下还原氯金酸,制备出表面具有金纳米粒子聚集结构的基底。用原子力显微镜、扫描电镜、X射线衍射、吸收和荧光光谱研究了基底的性质。结果表明：随着光照时间增加至20 h,金种子长大为平均粒径140 nm的不规则状多晶粒子,且出现双层粒子堆叠。基底的吸收光谱上出现了由金粒子的表面等离子体激元偶极子耦合引发的强烈吸收峰,随着粒子粒径增大,耦合峰在600~800 nm波段内连续红移升高,表明耦合程度不断增强。在223 nm紫外光的激发下,基底的荧光光谱上在405 nm处出现发射峰,是由金粒子表面激发电子和空穴的复合辐射造成的,发光强度随着基底上粒子平均尺度增加而减弱。     

Ag和K掺杂对La4/5Sr1/5MnO3电输运性质及磁电阻的影响

用固相反应法制备La4/5Sr1/5MnO3及在其A位分别掺K、Ag系列样品,通过X射线衍射(XRD)谱,电阻率-温度(ρ～T)曲线,磁电阻-温度(MR～T)曲线,研究了在A位同时掺入一价、二价元素而保持Mn3+/Mn4+比值(摩尔比n(A)/n(B))不变的钙钛矿锰氧化物体系A位离子半径及A位离子的无序度σ2对电输运性质及磁电阻的影响.结果表明:A位离子的无序度σ2对电输运性质的影响比A位平均离子半径对电输运性质的影响大;电阻率曲线出现双峰是由于表面相电阻率与体相电阻率竞争的结果;MR的温度稳定性是本征磁电阻与隧穿磁电阻竞争的结果;掺K样品在253～175K温区MR从8.1%缓慢上升到9.5%,掺Ag样品在260K以下温区MR都在7.4%以上,纯的La4/5Sr1/5MnO3样品在318～259K温区MR都在7.0%以上,在如此宽温区MR几乎不变有利于MR的实际应用.     

Pr0．45（Ca1-xSrx）0．55MnO3体系调带宽引起的磁相变及电输运性质转变

采用固相法制备了Pr0．45（Ca1-xSrx）0．55MnO3（x=0．0,0．2,0．4,0．6,0．8,1．0）多晶样品．通过测量样品的X射线衍射（XRD）谱、磁化强度-温度（M～T）曲线、电阻率-温度（ρ～T）曲线,研究了Sr^2＋替代Ca^2＋对Pr0．45Ca0．55MnO3体系磁性和电性的影响．实验发现：...     

种子法制备三角形银纳米粒子及其性能表征

 以十六烷基三甲基溴化胺(CTAB)为软模板剂，采用种子法制备出三角形银纳米粒子，应用透射电镜、能量散射X射线谱仪、紫外 可见分光光度计研究了粒子的性能。结果表明：所得三角形银纳米粒子是面心立方单晶，边长随着种子加入量的减少而递增，可在20～100 nm范围内调节；CTAB以薄膜形式包覆于粒子表面阻止其氧化，粒子胶体的吸收光谱呈现典型的三角形粒子吸收峰。用扫描电镜观测到粒子在硅片上自组装成一定的2维阵列结构。     

Pedestrian choice behavior analysis and simulation of vertical walking facilities in transfer station

Considering the interlayer height, luggage, the difference between queuing pedestrians, and walking speed, the pedestrian choice model of vertical walking facilities is established based on a support vector machine. This model is verified with the pedestrian flow data of Changchun light-rail transfer station and Beijing Xizhimen transfer station. Adding the pedestrian choice model of vertical walking facilities into the pedestrian simulation model which is based on cellular automata, the pedestrian choice behavior is simulated. In the simulation, the effects of the dynamic influence factors are analyzed. To reduce the conflicts between pedestrians in opposite directions, the layout of vertical walking facilities is improved. The simulations indicate that the improved layout of vertical walking facilities can improve the efficiency of pedestrians passing.     

热处理对钙钛矿锰氧化物La_(0.95)Sr_(0.05)MnO_3离子价态和磁结构的影响

对于磁性氧化物的磁有序,传统的观点用超交换相互作用(SE)和双交换相互作用(DE)模型进行解释,其出发点都建立在全部氧离子是-2价的基础上.例如,对于LaMnO_3,认为其中的La和Mn都处于+3价,用SE模型解释相邻Mn~(3+)离子间的反铁磁序;当以二价的Sr离子替代一部分La离子后,认为等量的Mn~(3+)离子变为Mn~(4+)离子,用DE模型解释相邻Mn~(3+)和Mn~(4+)离子间的铁磁序.然而,事实上在氧化物中存在一部分负一价氧离子.Cohen[Nature 358 136]利用密度泛函理论计算了BaTiO_3的价电子态密度,结果得到只有Ba离子的化合价与传统观点相同,为+2价;而Ti和0分别为+2.89价和-1.63价,不是传统观点的+4价和-2价,但是与多年来关于氧化物电离度的研究[Rev.Mod.Phys.42 317]和X射线光电子谱(XPS)的研究结果相符合.本文经过不同热处理条件制备了名义成分为La_(0.95)Sr_(0.05)MnO_3的三个样品,通过对样品的XPS分析,发现样品中不存在Mn~(4+)离子,只存在Mn2+和Mn~(3+)离子,平均价态随热处理程序的增加而升高.尽管三个样品有相同的晶体结构,但磁矩明显不同.对于这样的性能,不能用SE和DE模型解释其磁结构.利用本课题组最近在研究尖晶石结构铁氧体磁有序过程中提出的O 2p巡游电子模型解释了这种现象,利用样品在10 K的磁矩估算出的Mn离子平均价态变化趋势与XPS分析结果一致.O 2p巡游电子模型的出发点建立在氧化物中存在一部分负一价氧离子的基础上,这是其与SE和DE模型的根本区别.     

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

We report a type of thin film Al Ga In P red light emitting diode(RLED) on a metallic substrate by electroplating copper(Cu) to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power(LOP) by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm~2 and 35 A/cm~2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types.     

Effect of O–O bonds on p-type conductivity in Ag-doped ZnO twin grain boundaries

Based on density functional theory, first-principles calculation is applied to study the electronic properties of undoped and Ag-doped Zn O-Σ7(12ˉ30) twin grain boundaries(GBs). The calculated result indicates that the twin GBs can facilitate the formation and aggregation of Ag substitution at Zn sites(AgZn) due to the strain release. Meanwhile, some twin GBs can also lower the ionization energy of AgZn. The density of state shows that the O–O bonds in GBs play a key role in the formation of a shallow acceptor energy level. When AgZnbonds with one O atom in the O–O bond, the antibonding state of the O–O bond becomes partially occupied. As a result, a weak spin splitting occurs in the antibonding state, which causes a shallow empty energy level above the valence band maximum. Further, the model can be applied to explain the origin of p-type conductivity in Ag-doped Zn O.