中学数学教学中数形結合的几个心理学問题

在教学改革运动中,提出数形結合的問題以后,就引起了全国各地数学工作者的广泛討論。許多同志认为数和形是客观世界相互矛盾的两个方面,两者是辯証的統一,如果把数和形割裂开来,不仅使学生不能深刻孰識客观世界的本来面貌,而且使学生的思維变得死板、僵化,妨碍学生智力的发展和学习的积极性,因而学生掌握的知識是片面的孤立的。另一方面,也有不少同志不贊同数形結合,由于各門学科有它本身的严密的系統性,如果貫彻数形結合,就破坏了数学領域中各分科的体系,妨碍了学生邏輯思維的发展。此外,有些同志贊同数形結合,但是訊为数形結合不等子在中学教学中废除几何課,必須承认中学数学課有其自身独特的規律性。本着双百方針的精神,本文拟从心理学角度来討論数学教学方法上数形結合的几个問題。不妥之处,請同志們指正。     

OLIGOMERIZATION AND POLYMERIZATION OF PERFLUOROALKENES AND PERFLUOROALKYNES CATALYZED BY π-BIS (ARENE) CHROMIUM (0) COMPLEXES

Oligomerization of perfluoropropylene catalyzed by π-bis-(arene)chromium(0) gave two dimers(ⅡA and ⅡB), two trimers(ⅢA and ⅢB) and two defluorotrimers(ⅣA and ⅣB). The last were found to arise from hydrogenation of ⅢB followed by dehydrofluorination. Hydrogen fluoride evolved was added to perfluoropropylene to give 2-hydroheptafluoropropane. By using labeling technique, hydrogen was found to arise from ligand presumably through π-σ rearrangement, A possible mechanism was proposed, π-Bis(benzene)chromium(0) was able to catalyze the polymerization of perfluorobut-2-yne to form its polymer, a white powder. The same catalyst could catalyze copolymerization of CF_3CCCF_3 and CF3CFCF_2 to give solid copolymer. Three perfluoro-2-alkynenitriles (CF_3CC-CN,C_2F_5CC-CN, n-C_3F_7CC-CN) were successfully synthesized by intramolecular Wittig reaction and one of them, i.e, C_2F_5C CCN was polymerized catalytically by π-bis(benzene)chromium(0) to give its polymer. a black powder.     

彩色电视屏用光敏磷光体粉浆的研磨条件

美国电化学学会第145次会议文章摘要中,有53篇和发光材料、显示器件有关。我们从中选译了一部份,陆续刊登以供参考。这次刊出的是和彩色电视有关的文章摘要,参考资料目录一律从略。     

南岭东段稀土岩浆岩岩浆演化初探

南岭东段稀土岩浆岩较集中的地区,稀土花岗岩系列分布最广,另有富含稀土的酸性火山岩、花岗斑岩及各种暗色脉岩。它们主要是燕山运动的产物,并互有联系。本文研究报道它们的演化过程、演化关系与岩浆的演化机理。     

重离子辐射提高腺病毒介导小鼠黑色素瘤细胞转染率的研究

探讨12C6+ 离子束辐射对用带有绿色荧光蛋白基因的缺陷性腺病毒（AdCMV GFP）转染小鼠黑色素瘤细胞(B16细胞系)的影响。 采用不同剂量的12C6+ 重离子束辐射经AdCMV GFP 转染的B16细胞， 利用流式细胞仪检测腺病毒的转染率。 结果表明， 12C6＋重离子束辐射能提高腺病毒对B16细胞的转染率， 且具有量效关系。 此外， 先转染后辐射法比起先辐射后转染法能更显著地提高转染率。The effect of 12C6+ beam irradiation on AdCMV GFP (a replication deficient recombinant adenoviral vector containing CMV promoter and green fluorescent protein) gene transfection efficiency for murine melanoma cell B16 has been investigated. B16 cells infected with AdCMV GFP were irradiated by different doses of 12C6+ beam. The transfection efficiency was assessed by flow cytometry (FCM). Results show that 12C6+ beam irradiation can improve tansfection efficiency of AdCMV GFP on murine melanoma cell B16 in a dose dependent manner. In addition， the tansfection efficiency in pre tranfection plus irradiation group is higher than that in pre irradiation plus tranfection group at the same dose irradiation dose.     

二次风率对分级进风燃烧室内湍流燃烧与NOx生成的影响

本文在分级进风燃烧室的热态实验装置上,测量了燃烧室内湍流燃烧的温度场和组分浓度场,研究了分级进风的流量比率即二次风率对燃烧及NOx生成的影响.得到了四组不同二次风率下燃烧室内气体温度和O2、CO2、CO与NO浓度的分布.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

一类阿达马分数阶微分方程在无穷区间上的的正解（英文）

利用Banach压缩映像原理以及构造一个显式迭代,得到阿达马分数阶微分方程在无穷区间上的正解的存在唯一性结果.而且,我们给出了一个误差估计.     

CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures, and electrical properties

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.     

组织忘却对组织惰性的影响研究—–环境动态性与创新导向的调节作用

组织惰性是客观存在于组织机体内的消极行为表现, 对组织的可持续发展产生阻碍作用. 如何克服组织惰性、提升组织效率是组织惰性研究的关键问题. 本文主要探讨了组织忘却对组织惰性的影响作用. 以长三角地区的260个调查样本为研究对象, 对组织忘却与组织惰性的关系进行了分析, 并探讨了环境动态性、创新导向以及环境动态性和创新导向交互在两者之间的调节作用. 结果表明 组织忘却对组织惰性具有显著的负向作用, 环境动态性和创新导向均显著正向地调节了两者之间的负向作用, 环境动态性和创新导向的交互对两者之间的关系具有调节作用, 但调节作用最强的情况出现在环境动态性或创新导向单方面较强, 而非环境动态性和创新导向两者均强时.