ABNORMAL ENERGY DEPENDENCE OF AXIAL MINIMUM CHANNELING YIELDS IN GexSi1-x/Si(100) STRAINED

An energy dependence of the axial minimum channeling yield in Ge_xSi_1-x/Si(100) Strained-layer superlattice is observed in the energy range of impinging He⁺ ione from 1.2 to 3.0 MeV. For [100] axial channeling, the measurements ere in agreement with what have been known in a single crystal. However, for [110] axial channeling, it is found that the minimum channeling yields increase markedly with the increase of He⁺ ion energy, which is contrary to the general channeling behaviors in a single crystal. A tentative model is suggested to explain this aberrance.     

用阻塞效应测量~28Si 13.095MeV激发态能级寿命

改进Al单晶样品的处理方法,得到了高质量的样品。进行了Al单晶辐照损伤实验,直接测量了E_p=1565keV时~(27)Al(p,α)~(24)Mg共振所形成的~(28)Si13.095MeV激发态能级寿命。采用Monte Carlo模拟和“分析”方法计算得到其寿命值τ=16.3±2.4as,对应的能级宽度Γ=40±6eV,与文献报道的共振产额法结果符合得较好。     

用阻塞效应测量28Si 13.095MeV激发态能级寿命

改进Al单晶样品的处理方法,得到了高质量的样品。进行了Al单晶辐照损伤实验,直接测量了E_p=1565keV时²⁷Al(p,α)²⁴Mg共振所形成的²⁸Si 13.095MeV激发态能级寿命。采用MonteCarlo模拟和“分析”方法计算得到其寿命值τ=16.3±2.4as,对应的能级宽度Γ=40±6eV,与文献报道的共振产额法结果符合得较好。 关键词：     

ABNORMAL ENERGY DEPENDENCE OF AXIAL MINIMUM CHANNELING YIELDS IN GexSi1-x/Si(100) STRAINED

An energy dependence of the axial minimum channeling yield in Ge_xSi_1-x/Si(100) Strained-layer superlattice is observed in the energy range of impinging He⁺ ione from 1.2 to 3.0 MeV. For [100] axial channeling, the measurements ere in agreement with what have been known in a single crystal. However, for [110] axial channeling, it is found that the minimum channeling yields increase markedly with the increase of He⁺ ion energy, which is contrary to the general channeling behaviors in a single crystal. A tentative model is suggested to explain this aberrance.     

声速的测定

一、引言声速是描述声波在介质中传播特性的一个基本物理量。它的测量方法可分为两类。第一类方法是根据C=l/t,测量长度l和时间间隔t即可算出声速C。第二类方法是利用C=f·λ,测出频率和波长后就可算出声速C。本实验所采用的共振干涉法和相位比较法是属于第二类方法。     

平面阻塞效应测量E_p=1565keV时~(27)Al(p,α)~(24)Mg共振反应寿命

采用(111)面阻塞效应测量了E_p=1565keV共振时~(27)Al(p,α)~(24)Mg核反应寿命。用解析方法分析实验数据。测到的核寿命τ=17.9_(-4.0)~(+4.4)as,与<110>轴阻塞效应测量结果和文献给出的结果在误差范围内一致。测量了E_p=1183.4keV时(111)面的α粒子的阻塞分布,并与理论计算作了比较。     

低能沟道效应及其应用

带电粒子在晶体中的运动会受到沟道效应和阻塞效应的强烈影响。本文评述了能量为Mev的质子和氦离子在晶体中的沟道效应及其在固体物理、半导体物理、表面物理和原子物理中的应用,同时也叙述了我们实验室在近几年来得到的各种实验结果。