超导磁体的短路环保护

本文讨论了高电流密度的大型超导磁体在失超保护上遇到的困难和短路环保护技术的物理原理,我们在多芯NbTi复合线绕制的小型磁体上,采用高纯铝作为短路环保护,实验观测到,在磁体未失超而关断供电电流的情况,能量基本上转移至短路环内;磁体电流较大时,磁体电流衰减的速率较大。在通过加热器人为触发失超的情况下,一部分磁体电流转移到短路环内;初始电流较大时,转移率较大,因此,将降低超导磁体失超后的温升。实验又观察到,当有短路环时,失超感应电压下降。     

2，5－二取代1，3，4－噁二唑的合成及其电子轰击质谱

２，５－二取代１，３，４－噁二唑的合成及其电子轰击质谱徐东成，杨骏，周健民，张玉霞，花文廷（北京大学化学系，１００８７１）二唑类化合物大都具有消炎［１］，抗菌［２］，调节植物生长，杀虫等广泛的生物活性，有的还是很好的光敏物质［３］和高分子液晶等聚合物...     

甲氟哌酸的极谱伏安行为研究及其应用

本较详细研究了甲氟哌酸的极谱伏安行为。在０．０２ｍｏｌ／Ｌ氯化铵底液中，甲氟哌酸产生一个良好的还原峰，峰电位（Ｅｐ）为－１．４５０Ｖ。其导数峰高与浓度在９×１０＾－５－３×１０＾－７ｍｏｌ／Ｌ范围内呈现良好的线性关系，大多数金属离子和无机阴离子不干扰测定，用于甲氟哌酸合杨样品的测定，结果满意。本还用多种电化学方法和技术研究了还原峰电流的性质，并提出了电极反应的机理。     

中学数学教学中数形結合的几个心理学問题

在教学改革运动中,提出数形結合的問題以后,就引起了全国各地数学工作者的广泛討論。許多同志认为数和形是客观世界相互矛盾的两个方面,两者是辯証的統一,如果把数和形割裂开来,不仅使学生不能深刻孰識客观世界的本来面貌,而且使学生的思維变得死板、僵化,妨碍学生智力的发展和学习的积极性,因而学生掌握的知識是片面的孤立的。另一方面,也有不少同志不贊同数形結合,由于各門学科有它本身的严密的系統性,如果貫彻数形結合,就破坏了数学領域中各分科的体系,妨碍了学生邏輯思維的发展。此外,有些同志贊同数形結合,但是訊为数形結合不等子在中学教学中废除几何課,必須承认中学数学課有其自身独特的規律性。本着双百方針的精神,本文拟从心理学角度来討論数学教学方法上数形結合的几个問題。不妥之处,請同志們指正。     

OLIGOMERIZATION AND POLYMERIZATION OF PERFLUOROALKENES AND PERFLUOROALKYNES CATALYZED BY π-BIS (ARENE) CHROMIUM (0) COMPLEXES

Oligomerization of perfluoropropylene catalyzed by π-bis-(arene)chromium(0) gave two dimers(ⅡA and ⅡB), two trimers(ⅢA and ⅢB) and two defluorotrimers(ⅣA and ⅣB). The last were found to arise from hydrogenation of ⅢB followed by dehydrofluorination. Hydrogen fluoride evolved was added to perfluoropropylene to give 2-hydroheptafluoropropane. By using labeling technique, hydrogen was found to arise from ligand presumably through π-σ rearrangement, A possible mechanism was proposed, π-Bis(benzene)chromium(0) was able to catalyze the polymerization of perfluorobut-2-yne to form its polymer, a white powder. The same catalyst could catalyze copolymerization of CF_3CCCF_3 and CF3CFCF_2 to give solid copolymer. Three perfluoro-2-alkynenitriles (CF_3CC-CN,C_2F_5CC-CN, n-C_3F_7CC-CN) were successfully synthesized by intramolecular Wittig reaction and one of them, i.e, C_2F_5C CCN was polymerized catalytically by π-bis(benzene)chromium(0) to give its polymer. a black powder.     

彩色电视屏用光敏磷光体粉浆的研磨条件

美国电化学学会第145次会议文章摘要中,有53篇和发光材料、显示器件有关。我们从中选译了一部份,陆续刊登以供参考。这次刊出的是和彩色电视有关的文章摘要,参考资料目录一律从略。     

南岭东段稀土岩浆岩岩浆演化初探

南岭东段稀土岩浆岩较集中的地区,稀土花岗岩系列分布最广,另有富含稀土的酸性火山岩、花岗斑岩及各种暗色脉岩。它们主要是燕山运动的产物,并互有联系。本文研究报道它们的演化过程、演化关系与岩浆的演化机理。     

重离子辐射提高腺病毒介导小鼠黑色素瘤细胞转染率的研究

探讨12C6+ 离子束辐射对用带有绿色荧光蛋白基因的缺陷性腺病毒（AdCMV GFP）转染小鼠黑色素瘤细胞(B16细胞系)的影响。 采用不同剂量的12C6+ 重离子束辐射经AdCMV GFP 转染的B16细胞， 利用流式细胞仪检测腺病毒的转染率。 结果表明， 12C6＋重离子束辐射能提高腺病毒对B16细胞的转染率， 且具有量效关系。 此外， 先转染后辐射法比起先辐射后转染法能更显著地提高转染率。The effect of 12C6+ beam irradiation on AdCMV GFP (a replication deficient recombinant adenoviral vector containing CMV promoter and green fluorescent protein) gene transfection efficiency for murine melanoma cell B16 has been investigated. B16 cells infected with AdCMV GFP were irradiated by different doses of 12C6+ beam. The transfection efficiency was assessed by flow cytometry (FCM). Results show that 12C6+ beam irradiation can improve tansfection efficiency of AdCMV GFP on murine melanoma cell B16 in a dose dependent manner. In addition， the tansfection efficiency in pre tranfection plus irradiation group is higher than that in pre irradiation plus tranfection group at the same dose irradiation dose.     

二次风率对分级进风燃烧室内湍流燃烧与NOx生成的影响

本文在分级进风燃烧室的热态实验装置上,测量了燃烧室内湍流燃烧的温度场和组分浓度场,研究了分级进风的流量比率即二次风率对燃烧及NOx生成的影响.得到了四组不同二次风率下燃烧室内气体温度和O2、CO2、CO与NO浓度的分布.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.