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71.
This paper studies the electronic transport property
through a square potential barrier in armchair-edge graphene
nanoribbon (AGNR). Using the Dirac equation with the continuity
condition for wave functions at the interfaces between regions with
and without a barrier, we calculate the mode-dependent transmission
probability for both semiconducting and metallic AGNRs,
respectively. It is shown that, by some numerical examples, the
transmission probability is generally an oscillating function of the
height and range of the barrier for both types of AGNRs. The main
difference between the two types of systems is that the magnitude of
oscillation for the semiconducting AGNR is larger than that for
the metallic one. This fact implies that the electronic transport
property for AGNRs depends sensitively on their widths and edge
details due to the Dirac nature of fermions in the system. 相似文献
72.
Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations
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The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene.In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance(TMR) effect.The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene. 相似文献
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