用速率方程分析垂直腔面发射激光器的噪声

采用一种合理的噪声模拟方法，用速率方程对垂直腔面发射激光器的噪声特性进行了数值分析，在单模情况下计算了器件的自发辐射因子、输出功率、注入电流、阈值电流等参数与相对强度噪声、频率噪声以及线宽等特性的关系，计算结果与实验基本相符，对优化垂直腔面发射激光器的结构设计和应用条件有所裨益. 关键词：     

EFFECTIVE CAVITY LENGTH IN VERTICAL CAVITY SURFACE EMITTING LASER

Effective cavity length method is introduced to vertical cavity surface emitting laser for characterizing some properties, including reflectivity, FWHM, mode wavelength and thresh-old gain. Some experiment results are demonstrated, showing the agreement of theoretical analysis with experiment.     

Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy

High （42.5%） indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy, The growth parameters of plasma power and N2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31 μm.     

谐振腔增强型光电探测器的角度相关特性研究

采用MBE生长In_0.3Ga_0.7As/GaAs和GaInNAs/GaAs量子阱为有源区的器件结构材料,制备出工作在1060nm及1310nm波段的谐振腔增强型光电探测器.对谐振腔增强型光电探测器的空间角度相关特性进行了实验与物理分析,改变光束入射角度,器件谐振接收波长可在大范围调变.     

超薄有源层谐振腔增强型调制器

提出利用超薄有源层制备高性能谐振腔增强型(RCE)半导体电吸收调制器件的可能性,并与波导型器件进行性能对比;对透射和反射两种类型器件优化分析了器件结构,进行了性能比较,结果表明:在插入损耗相当的情况下,反射式器件具有更高的调制对比度.     

1.55 μm低温生长GaAs谐振腔增强型探测器

利用低温（200℃）生长的GaAs材料作为吸收层制备了GaAs基1.55 μm谐振腔增强型（RCE） 光电探测器,对其光电特性进行了分析、研究.无光照0偏压下探测器暗电流为8.0×10－12A;光电流谱峰值波长1563 nm;响应谱线半宽4 nm, 具有良好的波长选择性.     

增益波导垂直腔面发射激光器中的模式分析及实验研究

本文研究了增益波导垂直腔面发射激光器的横向及纵向模式特性。采用二维延伸抛物型复折射率波导结构从理论上分析了增益波导垂直腔面发射激光器中模式的横向电场分布、模式间隔、模式增益对远场分布图和光束发射角、耦合效率等.实验中在阈值电流之上既观测到稳定的基模工作,也观测到高阶非简并模工作等不同的光谱结构及远场分布,理论和实验基本吻合.     

GaAs／GaAlAs多量子阱反射型光调制器及自电光效应器件

采用分子束外延技术生长含有大周期数的ＧａＡｓ／ＧａＡｌＡｓ多量子阶（ＭＱＷ）及分布布喇格反射器（ＤＢＲ）的ＰＩＮ结构器件。研究了量子限制斯塔克效应（ＱＣＳＥ），分布布喇格反射及非对称腔模（ＡＳＦＰ）效应对光的反射调制作用及这三种效应的兼容性对光调制及逻辑器件的重要影响。给出我们研制的反射型光调制器及自电光效应器件的实验结果。对于常通型及常闭型调制器，其两态衬比度可达１０ｄＢ。所研制的ＳＥＥＤ器件，其导通光能耗低于１０ｆＪ／（μｍ）￣２，实现其光学双稳态及Ｒ－Ｓ光触发器工作。     

RCE photodiodes at wavelength band of 1.06

Resonant cavity enhancement (RCE) typed optical detector and modulator which operating at wavelength band of 1.06 μm is reported. The peak quantum efficiency of detector is reasonably high as 50% without bias, and the photocurrent contrast ratio of modulator is 3.6 times at -3.5 V as compared to 0 V. The incident angle dependence of RCE device's photoelectric response is investigated carefully.     

Room temperature continuous wave operation of 1.33-um InAs/GaAs quantum dot laser with high output power

Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35μm for a 20-μm ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4×10~(10) cm-2. The laser keeps lasing at ground state until the temperature reaches 65℃.