排序方式: 共有56条查询结果,搜索用时 15 毫秒
31.
研究镶嵌在超薄非晶氮化硅(a-SiNx)层之间的双层纳米硅(nc-Si)的电荷存储现象.利用等离子体增强化学气相淀积(PECVD)技术在硅衬底上制备a-SiNx/a-Si/a-SiNx/a-Si/a-SiNx多层薄膜结构.采用常规热退火方法使非晶硅(a-Si)层晶化,形成包含双层nc-Si的金属-氮化物-半导体(MIS)结构.通过电容电压(C-V)特性测量,观测到该结构中由于电荷存储引起的C-V回滞现象,并在室温下成功观察到载流子基于Fowler-Nordheim(F-N)隧穿注入到第一层、第二层nc-Si的两级电荷存储状态.结合电流电压(I-V)特性的测量,对电荷存储的机理进行了深入分析.
关键词:
纳米硅
氮化硅
电容电压法
电流电压法 相似文献
32.
A new industrial method has been developed to produce polydisperse spherical colloidal silica particles with a very broad particle size,ranging from 20-95 nm.The process uses a reactor in which the original seed solution is heated to 100 ℃,and then active silicic acid and the seed solution are titrated to the reactor continuously with a constant rate.The original seeds and the titrated seeds in the reactor will go through different particle growth cycles to form different particle sizes.Both the particles' size distribution and morphology have been characterized by dynamic light scattering(DLS)and the focus ion beam(FIB) system.In addition,the as-prepared polydisperse colloidal silica particle in the application of sapphire wafer's chemical mechanical polishing(CMP) process has been tested.The material removal rate(MRR) of this kind of abrasive has been tested and verified to be much faster than traditional monodisperse silica particles.Finally,the mechanism of sapphire CMP process by this kind of polydisperse silica particles has been investigated to explore the reasons for the high polishing rate. 相似文献
33.
Ultra-thin and near-fully relaxed SiCe substrate is fabricated using a modified Ce condensation technique, and then a 25-nm-thiek biaxially tensile strained-Si with a low rms roughness is epitaxially deposited on a SiGe- on-Insulator (SGOI) substrate by ultra high vacuum chemical vapor deposition (UHVCVD). High-Resolution cross-sectional transmission electron microscope (HR-XTEM) observations reveal that the strained-Si/SiGe layer is dislocation-free and the atoms at the interface are well aligned. Furthermore, secondary ion mass spectrometry (SIMS) results show a sharp interface between layers and a uniform distribution of Ge in the SiCe layer. One percent in-plane tensile strain in the strained-Si layer is confirmed by ultraviolet (UV) Raman spectra, and the stress maintained even after a 30-s rapid thermal annealing (RTA) process at 1000℃. According to those results, devices based on strained-Si are expected to have a better performance than the conventional ones. 相似文献
34.
Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage 下载免费PDF全文
The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of “memory bottleneck”. Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well. 相似文献
35.
CdS是一种直接带隙半导体,室温下其禁带宽度约为2.4eV,是一种良好的太阳能电池窗口层材料和过渡层材料。分别以CdCl2和(NH2)2CS作为镉源和硫源,用化学淀积法在玻璃上生长CdS纳米薄膜,考察了Cd2 浓度、淀积温度、淀积时间以及溶液pH值对CdS成膜的影响。紫外可见光吸收谱和荧光光谱的结果表明,在样品的制备过程中,通过改变反应条件如化学试剂的浓度、加热温度、加热时间等来控制薄膜中颗粒的尺寸大小,随着反应温度的逐渐降低或反应时间的减少等可以使得到的CdS纳米晶薄膜中晶粒尺寸逐渐减小,带隙增加;镉离子浓度越小或氨水浓度越大,所得CdS纳米晶薄膜带隙越大。 相似文献
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We investigate the effect of chemicals on chemical mechanical polishing (CMP) of glass substrates. Ceria slurry in an ultra-low concentration of 0.25 wt. % is used and characterized by scanning electron microscopy. Three typical molecules, i.e. acetic acid, citric acid and sodium acrylic polymer, are adopted to investigate the effect on CMP performance in terms of material removal rate (MRR) and surface quality. The addition of sodium acrylic polymer shows the highest MRR as well as the best surface by atomic force microscopy after CMP, while the addition of citric acid shows the worst performance. These results reveal a mechanism that a long-chain molecule without any branches rather than small molecules and common molecules with ramose abundant-electron groups is better for the dispersion of the slurry and thus better for the CMP process. 相似文献
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39.
A 0.18-μm 3.3 V 16 k Bits 1RIT Phase Change Random Access Memory (PCRAM) Chip 总被引:1,自引:0,他引:1 下载免费PDF全文
Using standard 0.18-μm CMOS process and the special platform for S-inch phase change random access memory (PCRAM), the first Chinese 16k bits PCRAM chip has been successfully achieved. A 1RIT structure has been designed for low voltage drop and low cost compared to the 1RlD structure and the BJT-switch structure. Full integration of the 16k bits PCRAM chip, including memory cell, array structure, critical circuit module, and physical layout, has been designed and verified. The critical integration technology of the phase change material (PCM) fabrication and the standard CMOS process has been solved. Test results about PCM in a large-scale array have been generated for the next research of PCRAM chip. 相似文献
40.
采用纳米球刻蚀(nanosphere lithography)技术,以自组装的聚苯乙烯纳米小球(polystyrene,PS小球)的单层膜为掩模,制备出二维有序的CdS纳米阵列.利用扫描电子显微镜(SEM)对样品结构进行了表征,用紫外—可见分光光度计对样品光学性质进行了分析.结果表明:制备的二维CdS纳米阵列是高度有序的,且与作为掩模的纳米小球的原始尺寸及排布结构一致;禁带宽度为2.60eV,相对于体材料的2.42eV,向短波长蓝移了0.18eV,表现出CdS材料在纳米结构点阵中的量子尺寸效应;CdS纳米
关键词:
纳米球刻蚀
二维CdS纳米有序阵列 相似文献