Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

Polar Dependence of Threading Dislocation Density in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

We investigate the threading dislocation(TD) density in N-polar and Ga-polar GaN films grown on sapphire substrates by metal-organic chemical vapor deposition.X-ray diffraction results reveal that the proportion of screw type TDs in N-polar GaN is much larger and the proportion of edge type TDs is much smaller than that in Ga-polar.Transmission electron microscope results show that the interface between the AlN nucleation layer and the GaN layer in N-polar films is smoother than that in Ga-polar films,which suggests different growth modes of GaN.This observation explains the encountered difference in screw and edge TD density.A model is proposed to explain this phenomenon.     

用于目标跟踪/识别中红外AOTF光谱相机光学系统的设计与优化

为获得红外目标的空间信息和光谱信息,设计了一种用于中波红外声光可调谐光谱相机的光学系统.设计中引入折/衍射混合透镜,在用6片透镜的情况下达到了12×变倍,在长焦处时能识别2 000m远的目标.采用ZEMAX光学设计软件模拟声光晶体的衍射,在晶体出射面上优化设计了4°的楔角,使-1级衍射光能共轴出射.该光学系统在空间频率17lp/mm处调制传递函数值最大达到0.7,能量集中度大于90%,能够满足光谱相机用于识别/跟踪目标的要求.     

Particle captured by a field-modulating vortex through dielectrophoresis force

In microfluidic technology, dielectrophoresis (DEP) is commonly used to manipulate particles. In this work, the fluid-particle interactions in a microfluidic system are investigated numerically by a finite difference method (FDM) for electric field distribution and a lattice Boltzmann method (LBM) for the fluid flow. In this system, efficient particle manipulation may be realized by combining DEP and field-modulating vortex. The influence of the density ($\rho_{\rm p}$), radius ($r$), and initial position of the particle in the $y$ direction ($y_{\rm p0}$), and the slip velocity ($u_{0}$) on the particle manipulation are studied systematically. It is found that compared with the particle without action of DEP force, the particle subjected to a DEP force may be captured by the vortex over a wider range of parameters. In the $y$ direction, as $\rho_{\rm p}$ or $r $ increases, the particle can be captured more easily by the vortex since it is subjected to a stronger DEP force. When $u_{0}$ is low, particle is more likely to be captured due to the vortex-particle interaction. Furthermore, the flow field around the particle is analyzed to explore the underlying mechanism. The results obtained in the present study may provide theoretical support for engineering applications of field-controlled vortices to manipulate particles.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor

Electromagnetic field distribution in the vertical metal organic chemical vapour deposition (MOCVD) reactor is simulated by using the finite element method (FEM). The effects of alternating current frequency, intensity, coil turn number and the distance between the coil turns on the distribution of the Joule heat are analysed separately, and their relations to the value of Joule heat are also investigated. The temperature distribution on the susceptor is also obtained. It is observed that the results of the simulation are in good agreement with previous measurements.     

高能物理的几项重要进展——第25届国际高能物理会议简介

第25届国际高能物理会议于1990年8月1-9日在新加坡召开.这是历年来高能物理方面一次规模巨大的盛会,也是我国代表在国际高能会议上首次获得热烈欢迎的一次盛会.因为自1988年以来,我国建成了一台其亮度是超纪录的,能域适用于粲物理研究的正负电子对撞机.为此,大会邀请了中国科学院高能物理研究所郑志鹏教授作了关于粲物理的大会邀请报告,同时又邀请了中国科学院高能物理研究所方守贤教授在加速器的分组会议上作有关BEPC的报告.世界各国大实验室的负责人和知名学者,都以浓厚的兴趣关注着中国高能物理的发展. 本届会议报道的一个重要结果,是…     

涤纶三维卷曲中空纤维结构性能研究：II.涤纶中空纤维在生产 …

阐述涤纶中空纤维在生产过程中性能的变化，并讨论了纤维聚集态结构与中空纤维特有的膨松性、回弹性的关系。结果表明，在后加工过程中，随着拉伸进行，纤维取向越大，潜在卷曲展现越充分，膨松性Ｖ１、Ｖ２、卷曲性能和压缩回弹率与非晶区取向程度、结晶度等密切相关。     

一道极限题的推广及联想

六年制重点中学高中课本《代数与几何》第一册复习参考题一的第15题为求tim (1+1/2+1/4+…+1/2~n)/(1+1/3+1/9+…+1/3_n) 此题是将式中的分子、分母分别求和变形后,求得极限值为(1-1/3)/(1-1/2)=4/3观察式子结构特点:分子、分母分别是以1/2、1/3为公比的等比数列的前n项和,回味求解过程,不难作出以下推广。命题1 设{a_n}、{a'_n}分别是以q、q'(|q|、|q'|<1)为公比的等比数列,则 rim (a_1+a_2+…+a_n)/(a'_1+a'_2+…+a'_n)=a_1(1-q')/a'_1(1-q) 证明∵|q|、|q'|<1,∴lim q~n=0,lim q'~n=0,于是据等比数列前n项和公式得