（Tm,Ho）：YLF晶体激光器的实验研究

报道了一台连续792nmTi:Al2O3激光器纵向抽运的（Tm,Ho):YLF微片激光器。在室温条件下，当抽运功率为680mW时，激光器在2．06μm波长的输出功率达到90mW。激光器阈值为380mW，光光转换效率为13％，斜率效率为26%.     

带用横向射流的三维超声速湍流流场分析

应用显式的五阶WENO格式，结合k-ω湍流模型，求解三维Favre平均N－S方程，计算了从方孔横向喷出的声速气流与马赫数为3．0的超声速气流的干扰流场。结果表明，在射流上游，射流的阻碍便超声速气流产生分离，形成两个主要的回流区域，主回流导致在方孔射流两侧形成马蹄涡区域，射流下游存在低压区域，形成较小的回流以及一对螺流形旋涡。     

开展数学实验课程教学促进大学数学教学改革

本主要阐述了开设数学实验课程教学对促进数学教改所起的作用，探索了数学实验课程的教学内容、教学方法、教学手段以及考试改革等。全面总结了重庆大学近年来开展数学实验课程教学及深化理工科数学教学改革的一些思路。     

A Facile Synthesis of α-Phenylthio-α,β-Unsatuated Esters

α-phenylthio-α，β-unsaturated esters 6 were synthesized by Witting reaction of 3.which were prepared by a phenylsulfenyllation-trans-ylidation reaction.     

横向射流式单重态氧发生器的性能实验研究

 对氧碘化学激光器的单重态氧发生器（SOG）进行了改进，采用横向射流方式，并对该横向射流式单重态氧发生器的性能进行了检测。实验中过氧化氢碱溶液温度控制在－16℃左右,氯气流量为530mmol/s，He与氯气的流量比为3;采用PS法测量单重态氧分子的产率,吸收法测量氯气的利用率和相对水含量。得出如下结论:在不使用冷阱和分离器的情况下，最高单重态氧分子产率达到58%, 氯气利用率在80%以上,相对水含量小于等于0.5;气体达到最大流量时,发生器仍然能稳定地工作。     

Studies on Synthesis and properties of Mg-Al-nitrate Layered Ouble Hydroxides

A positive Mg-Al-nitrate layered double hydroxides(LDHs) has been synthesized using a non-steady coprecipitation method.The shape.size,chemical composition,electrical property and anion exchange property of the positve nanoparticle were studied by SEM,XRD,FTIR,chemical analysis,spectroanalysis and meaxsuring of electrophoretic mobilities.Preliminary results show the positive nanoparticle is a promising precursor of polymer/LDHs nanocomposite.     

在几何和参数上表示同一条曲线的两条有理NURBS曲线的权与控制顶点之间的关系

The paper discusses the relationship between weights and control vertices of two rational NURBS curves of degree two or three with all weights larger than zero when they represent the same curve parametrically and geometrically, and gives sufficient and necessary conditions for coincidence of two rational NURBS curves in non-degeneracy case.     

Ablation of GaN Using a Femtosecond Laser

We study the pulsed laser ablation of wurtzite gallium nitride(GaN) films grown on sapphire,using the femtosecond laser beam at a central wavelength of 800nm as the source for the high-speed ablation of GaN films.By measuring the backscattered Raman spectrum of ablated samples,the dependence of the ablation depth on laser fluence with one pulse was obtained.The threwshold laser fluence for the ablation of GaN films was determined to be about 0.25J/cm^2,Laser ablation depth increases with the increasing laser fluence until the amount of removed material is not further increased.The ablated surface was investigated by an optical surface interference profile meter.