Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method

A singie cell element of chalcogenide random access memory was fabricated by using the focused ion beam method.The contact size between the Ge2Sb2Te5 Phase change film and the top electrode film is about 600nm (diameter) and the contact area is caiculated to be 0.28μm^2.The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory.The minimum threshold current of about 0.6mA is obtained.     

含1，2，3－噻二唑环硫脲的合成及结构鉴定

含１，２，３－噻二唑环硫脲的合成及结构鉴定司宗兴，董燕红（中国农业大学应用化学系，北京１０００９４）作者根据：（１）硫脲分子中氮原子与硫原子电子的ｐ－π－ｐ共轭效应与生物活性关系；（２）硫原子取代脲中氧原子后，毒性降低的一般规律；（３）氮原子上不同苄...     

A Simple Model for Measuring Refractive Index of a Liquid Based upon Fresnel Equations

Due to many experimental data required and a lot of calculations involved, it is very complex and cumbersome to model prism-based liquid-refractive-index-measuring methods. We develop a new method of mathematical modelling for measuring refractive index of a liquid based upon the Fresnel formula and prism internal reflection at an incident angle less than the critical angle. With this method, only two different concentrations measurements for a kind of solution can lead to the determination of computational model. Measurements are performed to examine the validity of the theoretical model. Experimental results indicate the feasibility of the theoretical model with an error of 1%. The method is also capable of measuring even smaller changes in the optical refractive index of the material on a metal surface by the surface plasma resonance sensing techniques.     

自然循环回路内芯片的强化沸腾换热研究

针对电子器件的高效冷却问题,对自然循环回路系统内表面加工有方柱形微结构的硅片上FC-72的强化沸腾换热性能进行了实验研究.测试了两个芯片,其表面上的方柱形微结构的边长均为30μm,但高度分别为60 μm和200 μm.沸腾介质的过冷度设为10 K、25 K和35 K.随着壁面过热度的增加,微结构表面芯片上的热流密度急剧增加且临界热流密度时芯片的表面温度低于芯片回路正常工作的临界上限温度85℃,这与其在池沸腾换热中的特点一样.但临界热流密度值与池沸腾情况相比有所降低.     

Photoluminescence Property of Co3O4 Nanowires

Co3O4 nanowire arrays are fabricated by electrodeposition with following heat-treatment in atmosphere ambient. Photoluminescence is investigated at 295K. In the experiment, when increasing the excitation light wavelength from 260 nm to 360 nm, two kinds of emissions corresponding to the increasing excitation light wavelength are observed. One of them alters the excited emission position, another keeps its emission position. The distinct behaviour of excited emissions related to the increasing excitation wavelength indicates that the mechanism of them must be different. According to the experimental comparison and first-principle calculation, the two kinds of emissions are discussed.     

Development of the Technique for Fabricating Submicron Moire Gratings on Metal Materials Using Focused Ion Beam Milling

A focused gallium ion （Ga＋） beam is used to fabricate micro/submicron spacing gratings on the surface of porous NiTi shape memory alloy （SMA ）. The crossing type of gratings with double-frequency （25001/mm and 50001/mm） using the focused ion beam （FIB） milling are successfully produced in a combination mode or superposition mode. Based on the double-frequency gratings, high-quality scanning electron microscopy （SEM） Moird patterns are obtained to study the micro-scale deformation of porous NiTi SMA. The grating fabrication technique is discussed in detail. The experimental results verify the feasibility of fabricating high frequency grating on metal surface using FIB milling.     

具有粗糙核的Marcinkiewicz积分交换子在齐型Herz-Morrey空间上的有界性

建立了一类具有粗糙核的Marcinkiewicz积分交换子在齐型Herz-Morrey空间上的有界性.     

2-连通P3-支配图的哈密尔顿性

设G是n阶2-连通P3-支配图,我们证明了如果δ≥n/4,则G是哈密尔顿的或G∈F ∪{K2,3,K1,1,3},这里F是一类已知的2-连通非哈密尔顿图.